WNT2F04
WNT2F04
NPN, General Purpose Transistors
Http//:www.willsemi.com
Descriptions
The WNT2F04 is designed for general purpose
amplifier applications. Standard products are Pb-free
and Halogen-free
(Top View)
3
SOT-23
Features
1AM
Complementary to WPT2F06
1
2
Collector Current: I
C
=0.2A
Marking :1AM
1: BASE
2: EMITTER
3: COLLECTOR
Order information
Device
WNT2F04-3/TR
Package
SOT-23
Shipping
3000/Reel&Tape
Absolute maximum ratings
Parameter
Symbol
Collector-emitter Voltage
V
CEO
Collector-base Voltage
V
CBO
Emitter-base Voltage
V
EBO
Continues Collector Current
I
C
Collector Power Dissipation
P
C
Thermal Resistance From Junction To Ambient R
ΘJA
Junction Temperature
T
J
Operating Temperature
T
OPR
Storage Temperature Range
T
stg
Value
40
60
6
200
250
625
150
-40~+85
-55~+150
Unit
V
V
V
mA
mW
°C /W
°C
°C
°C
Will Semiconductor Ltd.
1
Jun, 2018 - Rev.1.4
WNT2F04
Electronics Characteristics
(Ta=25
o
C, unless otherwise noted)
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
Symbol
BV
CEO
BV
CBO
BV
EBO
I
CEX
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
hFE
Test Conditions
I
C
=1mA, I
B
=0mA
I
C
=10uA, I
E
=0mA
I
E
=10uA, I
C
=0mA
V
CE
=30V,
V
EB(OFF)
=3V
V
CB
=50V, I
E
=0A
V
EB
=5V, I
C
=0A
I
C
=50mA, I
B
=5mA
I
C
=50mA, I
B
=5mA
VCE=1V, IC=1mA
VCE=1V, IC=10mA
VCE=1V, IC=50mA
Min.
40
60
6
Max.
Unit
V
V
V
nA
nA
nA
V
V
50
100
100
0.3
0.95
70
100
60
300
4
8
5
300
35
35
200
50
Collector capacitance
Emitter capacitance
C
C
C
E
F
f
T
t
d
t
r
t
s
t
f
IE=Ie=0;VCE=5V;
f=1MHz
IC=Ic=0;VBE=0.5V;
f=1MHz
IC=100mA;
VCE=5V; RS=1kΩ;
f=10Hz to15.7kHz
pF
pF
dB
MHz
ns
ns
ns
ns
Noise figure
Transition frequency
Delay time
Rise time
Storage time
Fall time
V
CE
=20V,
I
C
=10mA, f=100MHz
V
CC
=3V, V
BE(off)
=-0.5V
I
C
=10mA,
I
B1
=1mA
V
CC
=3V, I
C
=10mA,
I
B1
= I
B2
=1mA
Will Semiconductor Ltd.
2
Jun, 2018 - Rev.1.4
WNT2F04
Typical characteristics
(Ta=25
o
C, unless otherwise noted)
Will Semiconductor Ltd.
3
Jun, 2018 - Rev.1.4
WNT2F04
Package outline dimensions
SOT-23
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
Dimensions in millimeter
Min.
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
1.800
0.300
0°
Typ.
1.025
0.500
0.975
0.400
0.115
2.900
1.300
2.400
0.950TYP
1.900
0.500REF
0.400
4°
0.500
8°
2.000
Max.
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
Recommend PCB Layout (Unit: mm)
0.80
1.00
1.90
Will Semiconductor Ltd.
4
2.40
Jun, 2018 - Rev.1.4
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