ESD56151WXX
ESD56151WXX
1-Line, Bi-directional, Transient Voltage Suppressor
http//:www.sh-willsemi.com
Descriptions
The ESD56151WXX is a transient voltage suppressor
designed to protect power interfaces. It is suitable to replace
multiple discrete components in portable electronics.
The ESD56151WXX is specifically designed to protect power
lines.
The ESD56151WXX is available in SOD-323 package.
Standard products are Pb-free and Halogen-free.
SOD-323
Features
Reverse stand-off voltage: 4.5V ~ 5V
Surge protection according to IEC61000-4-5
see
Table 4
ESD protection according to IEC61000-4-2
±30kV (contact and air discharge)
Low clamping voltage
Solid-state silicon technology
Pin1
Pin2
Circuit diagram
Applications
Power supply protection
Power management
X= Device code (O P)
* = Month code
Marking (Top View)
Order information
Table 1.
Device
ESD56151W04-2/TR
ESD56151W05-2/TR
Package
SOD-323
SOD-323
Shipping
3000/Tape&Reel
3000/Tape&Reel
Marking
TO*
TP*
Will Semiconductor Ltd.
1
Revision 1.0, 2017/04/18
ESD56151WXX
Absolute maximum ratings
Table 2.
Parameter
Peak pulse power (tp = 8/20μs)
ESD according to IEC61000-4-2 air discharge
ESD according to IEC61000-4-2 contact discharge
Junction temperature
Operating temperature
Lead temperature
Storage temperature
Symbol
P
pk
V
ESD
T
J
T
OP
T
L
T
STG
Rating
2400
±30
±30
125
-40~85
260
-55~150
Unit
W
kV
o
o
o
o
C
C
C
C
Electrical characteristics
(T
A
= 25
o
C, unless otherwise noted)
I
V
RWM
Reverse stand-off voltage
I
R
V
CL
I
PP
Reverse leakage current
Clamping voltage
Peak pulse current
I
PP
I
HOLD
V
CL
V
HOLD
V
TRIG
V
RWM
I
TRIG
I
R
I
R
I
TRIG
I
HOLD
V
RWM
V
TRIG
V
HOLD
V
CL
V
V
TRIG
Reverse trigger voltage
I
TRIG
Reverse trigger current
V
HOLD
Reverse holding voltage
I
PP
I
HOLD
Reverse holding current
Definitions of electrical characteristics
Will Semiconductor Ltd.
2
Revision 1.0, 2017/04/18
ESD56151WXX
Electrical characteristics
(T
A
= 25
o
C, unless otherwise noted)
Table 3.
Reverse
Stand-off
Type number
Voltage
V
RWM
(V)
Max.
ESD56151W04
ESD56151W05
4.5
5.0
Breakdown voltage
V
BR
(V)
I
BR
= 1mA
Reverse
leakage current
I
RM
(μA) at V
RWM
Typ.
-
-
Junction
capacitance
F = 1MHz,
VR=0V (pF)
Typ.
280
400
Min.
4.7
5.3
Typ.
5.3
6.3
Max.
6.4
7.1
Max.
0.1
0.1
Max.
350
450
Table 4.
Rated peak pulse
current I
PP
(A)
150
145
1)3)
Type number
ESD56151W04
ESD56151W05
Clamping voltage
V
CL
(V) at I
PP
(A)
16
16
1)3)
Clamping voltage
V
CL
(V) at
I
PP
= 16A,
2)3)
Clamping voltage
V
CL
(V) at
V
ESD
= 8kV
7.0
7.5
2)3)
t
p
= 100ns
6.5
6.7
Notes:
1)
2)
3)
Non-repetitive current pulse, according to IEC61000-4-5. (8/20μs current waveform)
Non-repetitive current pulse, according to IEC61000-4-2.
Measured from pin 1 to pin 2.
Will Semiconductor Ltd.
3
Revision 1.0, 2017/04/18
ESD56151WXX
Electrical characteristics
(T
A
= 25
o
C, unless otherwise noted)
Front time: T
1
= 1.25
T = 8μs
Time to half-value:
T
2
= 20μs
Peak pulse current (%)
100
90
100
90
50
T
2
Current (%)
10
10
0
0
T
5
T
1
10
15
Time (μs)
20
25
30
30ns
t
r
= 0.7~1ns
60ns
t
Time (ns)
8/20μs waveform per IEC61000-4-5
16
Contact discharge current waveform per IEC61000-4-2
C
J
- Junction capacitance (pF)
500
400
300
200
ESD56151W04
Pulse waveform: t
p
= 8/20
s
V
C
- Clamping voltage (V)
14
12
10
8
6
4
ESD56151W05
ESD56151W04
f = 1MHz
V
AC
= 50mV
ESD56151W05
100
0
0
25
50
75
100
125
150
0
1
2
3
4
5
6
I
PP
- Peak pulse current (A)
V
R
- Reverse voltage (V)
Clamping voltage vs. Peak pulse current
Capacitance vs. Reverse voltage
10
100
80
60
40
20
0
Peak pulse power (kW)
1
0.1
% of Rated power
1
10
100
Pulse time (
s)
1000
0
25
50
75
100
o
125
150
T
A
- Ambient temperature ( C)
Non-repetitive peak pulse power vs. Pulse time
Power derating vs. Ambient temperature
Will Semiconductor Ltd.
4
Revision 1.0, 2017/04/18
ESD56151WXX
PACKAGE OUTLINE DIMENSIONS
SOD-323
D
D1
A2
A1
E
b
A
Top View
L
L1
θ
Side View
Side View
Symbol
A
A1
A2
b
c
D1
D
E
L
L1
θ
0.100
0°
Dimensions in Millimeters
Min.
0.800
0.800
0.000
0.250
0.080
1.600
2.300
1.150
Typ.
-
0.850
-
-
-
1.700
-
-
0.475 Ref.
-
-
0.500
8°
Max.
1.100
0.900
0.100
0.400
0.177
1.800
2.800
1.400
Recommended land pattern (Unit: mm)
0.80
1.40
Notes:
This recommended land pattern is for reference
0.80
purposes only. Please consult your manufacturing
group to ensure your PCB design guidelines are met.
Will Semiconductor Ltd.
5
c
Revision 1.0, 2017/04/18
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