WPM2081
WPM2081
Single P-Channel, -20V, -3.2A, Power MOSFET
Http://www.sh-willsemi.com
V
DS
(V)
-20
Typical R
DS(on)
(mΩ)
43 @ V
GS
=-4.5V
55 @ V
GS
=-2.5V
D
S
G
Descriptions
The WPM2081 is P-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench
technology and design to provide excellent R
DS(ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WPM2081 is Pb-free.
SOT-23
D
3
1
G
2
S
Pin configuration (Top view)
Features
Trench Technology
Supper high density cell design
Excellent ON resistance
Extremely Low Threshold Voltage
Small package SOT-23
PB
Y
W
= Device Code
= Year
= Week(A~z)
Marking
Applications
DC/DC converters
Order information
Device
WPM2081-3/TR
Power supply converters circuit
Load/Power Switching for portable device
Package
SOT-23
Shipping
3000/Tape&Reel
Will Semiconductor Ltd.
1
Mar,2018- Rev.1.1
WPM2081
Absolute Maximum ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
a d
Maximum Power Dissipation
a d
Continuous Drain Current
b d
Maximum Power Dissipation
Pulsed Drain Current
c
Operating Junction Temperature
Lead Temperature
Storage Temperature Range
bd
Symbol
V
DS
V
GS
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
D
P
D
I
D
P
D
I
DM
T
J
T
L
T
stg
10 s
Steady State
-20
±12
Unit
V
-3.2
-2.6
0.96
0.62
-2.9
-2.3
0.78
0.50
-12
-55 to 150
260
-55 to 150
-2.9
-2.3
0.80
0.52
-2.6
-2.1
0.66
0.42
A
W
A
W
A
°C
°C
°C
Thermal resistance ratings
Single Operation
Parameter
Junction-to-Ambient Thermal Resistance
a
Junction-to-Ambient Thermal Resistance
b
Junction-to-Case Thermal Resistance
t
≤
10 s
Steady State
t
≤
10 s
Steady State
Steady State
Symbol
R
θJA
R
θJA
R
θJC
Typical
105
120
130
145
40
Maximum
130
155
160
190
60
Unit
°C/W
a
b
c
d
Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper
Surface mounted on FR4 board using minimum pad size, 1oz copper
Repetitive rating, pulse width limited by junction temperature, t
p
=10µs, Duty Cycle=1%
Repetitive rating, pulse width limited by junction temperature T
J
=150°C.
Will Semiconductor Ltd.
2
Mar,2018- Rev.1.1
WPM2081
Electronics Characteristics
(Ta=25
o
C, unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-to-source On-resistance
Forward Transconductance
V
GS(TH)
R
DS(on)
g
FS
V
GS
= V
DS
, I
D
= -250uA
V
GS
=-4.5V, I
D
= -3.2A
V
GS
= -2.5V, I
D
= -3.0A
V
GS
= -1.8V, I
D
= -2.5A
V
DS
= -5 V, I
D
= -4A
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
BODY DIODE CHARACTERISTICS
Forward Voltage
V
SD
V
GS
= 0 V, I
S
= -3.2A
-0.8
-1.5
V
td(ON)
tr
td(OFF)
tf
V
GS
= -4.5 V, V
DS
=-6 V,
I
D
=-3.3A, R
G
=6Ω
11.4
6.8
67.6
16.8
ns
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
V
GS
= -4.5 V, V
DS
= -10 V,
I
D
=-3.3 A
V
GS
= 0 V, f = 1.0MHz, V
DS
=
-6 V
1062
146
124
10
0.8
1.8
1.7
nC
pF
-0.35
-0.65
43
55
72
6
-1
65
81
110
16
S
mΩ
V
BV
DSS
I
DSS
I
GSS
V
GS
= 0 V, I
D
= -250uA
V
DS
=-16V, V
GS
= 0V
V
DS
= 0 V, V
GS
= ±12V
-20
-1
±100
V
uA
nA
Symbol
Test Conditions
Min
Typ
Max
Unit
Will Semiconductor Ltd.
3
Mar,2018- Rev.1.1
WPM2081
6
4
G
V
V
8
=
V
0
1
=
S
2
S
G
6
=
S
G
V
0
I
D
a
r
-
S
.
5
=
S
G
V
V
5
0
V
i
a
r
-
S
D
5
e
c
r
u
S
o
t
-
n
1
0
)
(
e
g
a
t
l
o
V
1
5
2
0
Typical Characteristics
(Ta=25
o
C, unless otherwise noted)
20
20
i
C
e
c
r
u
S
o
t
-
n
)
A
(
t
n
e
r
u
-I
DS
-Drain to Source Current (A)
-I
DS
-Drain to Source Current (A)
V
GS
=-2.5V
15
V
GS
=-4.5V
V
GS
=-3.5V
V
DS
=-5V
15
T=25 C
o
T=-50 C
10
o
T=125 C
o
10
5
V
GS
=-1.5V
5
0
0.0
0.5
1.0
1.5
2.0
2.5
0
0.5
1.0
1.5
2.0
2.5
-V
DS
-Drain to Source Voltage (V)
-V
GS
-Gate to Source Voltage(V)
Output characteristics
0.10
0.14
0.09
Transfer characteristics
I
D
=-4.0A
R
DS(ON)
-Resistance(
)
0.08
0.07
0.06
0.05
0.04
0.03
0.02
V
GS
=-4.5V
V
GS
=-2.5V
R
DS(ON)
-Resistance (
)
0.12
0.10
0.08
0.06
0.04
0.02
4
8
12
16
20
1
2
3
4
5
-I
DS
-Drain to Source Current(A)
-V
GS
-Gate to Source Voltage(V)
On-Resistance vs. Drain current
1.5
On-Resistance vs. Gate-to-source voltage
Gate Threshold Voltage Normalized
RDS
(ON)
-On-Resistance Normalized
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
-50
0
50
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
-50
V
GS
=-4.5V
I
D
=-4.0A
I
D
=-250uA
0
50
100
o
150
100
o
150
Temperature ( C)
Temperature ( C)
On-Resistance vs. Junction temperature
Threshold voltage vs. Temperature
Will Semiconductor Ltd.
4
Mar,2018- Rev.1.1
WPM2081
10
-I
SD
-Source to Drain Current (A)
1200
1000
Ciss
800
600
400
200
0
2
4
Crss
F=1MHz
9
8
7
6
5
4
3
2
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
T=150 C
o
Capacitance (pF)
T=25 C
o
Coss
6
8
10
-V
DS
-Drain to Source Voltage (V)
-V
SD
-Source to Drain Voltage (V)
Capacitance
120
Body diode forward voltage
100
100
T
J(MAX)
=150 C
o
-I
D
-Drain Current (A)
T
A
=25 C
80
o
10
Limit by Rdson
100us
1ms
Power (W)
60
1
10ms
10s
100ms
0.1
T
A
=25 C
Single Pulse
BVDSS Limit
100
o
40
DC
1s
20
0
1E-4
1E-3
0.01
0.1
1
10
100
1000
0.1
Pulse width (S)
1
10
-V
DS
-Drain to Source Voltage(V)
*V
GS
>minimum V
GS
at which R
DS(ON)
is specified
Single pulse power
4.5
Safe operating power
-V
GS
-Gate to Source Voltage (V)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
V
DS
=-10V
I
D
=-3.3A
2
4
6
8
10
Q
g
(nC)
Gate Charge Characteristics
Will Semiconductor Ltd.
5
Mar,2018- Rev.1.1
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