WNM7002
WNM7002
Single N-Channel, 60V, 0.3A, Power MOSFET
Http://www.sh-willsemi.com
V
DS
(V)
60
Typical R
DS(on)
(Ω)
3.7 @ V
GS
= 10V
3.8 @ V
GS
= 4.5V
ESD protected
D
S
G
Descriptions
The WNM7002 is N-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench
technology and design to provide excellent R
DS(ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WNM7002 is Pb-free.
SOT-23
D
3
1
G
2
S
Pin configuration (Top view)
Features
Trench Technology
Supper high density cell design
Excellent ON resistance
Extremely Low Threshold Voltage
Small package SOT-23
701
= Device Code
*
Device
WNM7002-3/TR
= Month
Marking
Applications
DC/DC converters
Order information
Package
SOT-23
Shipping
3000/Tape&Reel
Power supply converters circuit
Load/Power Switching for portable device
Will Semiconductor Ltd.
1
Mar,2019- Rev.1.1
WNM7002
Absolute Maximum ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
a d
Maximum Power Dissipation
a d
Continuous Drain Current
b d
Maximum Power Dissipation
Pulsed Drain Current
c
Operating Junction Temperature
Lead Temperature
Storage Temperature Range
bd
Symbol
V
DS
V
GS
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
D
P
D
I
D
P
D
I
DM
T
J
T
L
T
stg
10 s
Steady State
60
±20
Unit
V
0.30
0.24
0.96
0.61
0.26
0.21
0.78
0.50
1.2
0.28
0.22
0.83
0.53
0.25
0.20
0.66
0.42
A
W
A
W
A
°C
°C
°C
-55 to 150
260
-55 to 150
Thermal resistance ratings
Single Operation
Parameter
Junction-to-Ambient Thermal Resistance
a
Junction-to-Ambient Thermal Resistance
b
Junction-to-Case Thermal Resistance
t
≤
10 s
Steady State
t
≤
10 s
Steady State
Steady State
Symbol
R
θJA
R
θJA
R
θJC
Typical
105
130
130
145
40
Maximum
130
150
160
190
60
Unit
°C/W
a
b
c
d
Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper
Surface mounted on FR4 board using minimum pad size, 1oz copper
Repetitive rating, pulse width limited by junction temperature, t
p
=10µs, Duty Cycle=1%
Repetitive rating, pulse width limited by junction temperature T
J
=150°C.
Will Semiconductor Ltd.
2
Mar,2019- Rev.1.1
WNM7002
Electronics Characteristics
(Ta=25
o
C, unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-to-source On-resistance
V
GS(TH)
R
DS(on)
V
GS
= V
DS
, I
D
= 250uA
V
GS
=10V, I
D
=0.3A
V
GS
= 4.5V, I
D
= 0.2A
1.0
1.4
3.7
3.8
2.0
4.7
5.6
V
Ω
BV
DSS
I
DSS
I
GSS
V
GS
= 0 V, I
D
= 250uA
V
DS
=48V, V
GS
= 0V
V
DS
= 0 V, V
GS
= ±20V
60
1
±5
V
uA
uA
Symbol
Test Conditions
Min
Typ
Max
Unit
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge1
Total Gate Charge2
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
BODY DIODE CHARACTERISTICS
Forward Voltage
V
SD
V
GS
= 0 V, I
S
= 200mA
0.8
1.2
V
td(ON)
tr
td(OFF)
tf
V
GS
= 10 V, V
DS
= 30 V,
R
L
=60
Ω
, R
G
=25Ω
5.2
17.2
32.4
19.0
ns
C
ISS
C
OSS
C
RSS
Q
G(4.5V TOT)
Q
G(10V TOT)
Q
G(TH)
Q
GS
Q
GD
V
GS
= 4.5&10 V, V
DS
= 15 V,
I
D
=0.5 A
V
GS
= 0 V, f = 1.0MHz, V
DS
=
25 V
14.4
5.1
0.27
0.26
0.41
0.06
0.1
0.14
nC
pF
Will Semiconductor Ltd.
3
Mar,2019- Rev.1.1
WNM7002
Typical Characteristics
(Ta=25
o
C, unless otherwise noted)
0.7
0.6
V
GS
=6V
0.6
0.5
0.4
0.3
0.2
0.1
V
GS
=2.0V
0.0
0
1
2
3
4
5
V
GS
=3.0V
V
GS
=10V
V
GS
=4.0V
V
GS
=8V
I
D
-Drain-to-Source Current (A)
I
DS
-Drain to Source Current(A)
V
GS
=5V
V
DS
=2V
0.5
T=125 C
o
0.4
0.3
T=25 C
o
0.2
T=-50 C
o
0.1
0.0
0
1
2
3
4
5
V
DS
-Drain-to-Source Voltage (V)
V
GS
-Gate to Source Voltage(V)
Output characteristics
10
9
10
Transfer characteristics
V
GS
=10V
R
DS(ON)
-On Resistance (
)
8
7
6
5
4
3
2
1
0
0.1
0.2
0.3
T=125 C
o
R
DS(ON)
-On Resistance(
)
9
8
7
6
5
4
3
3
4
5
6
7
8
I
D
=0.5A
T=85 C
T=25 C
T=-50 C
0.4
0.5
0.6
0.7
0.8
o
o
o
9
10
I
DS
-Drain to Source Current(A)
V
GS
-Gate to Source Voltage (V)
On-Resistance vs. Drain current
On-Resistance vs. Gate-to-source voltage
1.4
R
DSON
-On Resistance Normalized
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50
-25
0
25
50
75
o
Gate Threshold Voltage Normalized
V
GS
=10V
I
D
=0.5A
I
D
=250uA
1.2
1.0
0.8
0.6
100
125
150
Temperature ( C)
0.4
-50
-25
0
25
50
o
75
100
125
150
Temperature ( C)
On-Resistance vs. Junction temperature
Threshold voltage vs. Temperature
Will Semiconductor Ltd.
4
Mar,2019- Rev.1.1
WNM7002
2.0
50
f=1MHz
40
I
S
-Source to Drain Current (A)
V
GS
=0
1.5
C-Capacitance(pF)
C
iss
30
20
C
oss
C
rss
1.0
T=150 C
o
0.5
10
T=25 C
o
0
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30
0.2
0.4
0.6
0.8
1.0
1.2
V
DS
-Source to Source Voltage(V)
V
SD
-Source to Drain Voltage (V)
Capacitance
600
Body diode forward voltage
10
T
J(Max)
=150
C
500
Power (W)
400
I
D
-Drain Current (A)
T
A
=25
C
1
Limit by Rdson
1ms
300
0.1
10s
0.01
DC
10ms
100ms
1s
200
100
BVDSS Limit
0
1E-5
1E-4
1E-3
0.01
0.1
1
10
100
1000
1E-3
1
Pulse width (S)
10
V
DS
-Drain to Source Voltage(V)
100
*V
GS
>minimum V
GS
at which R
DS(ON)
is specified
Single pulse power
V
GS
-Gate to Source Voltage (V)
10
Safe operating power
V
DS
=10V
8
I
D
=0.5A
6
4
2
0
0.0
0.1
0.2
0.3
0.4
Q
g
(nC)
Gate Charge Characteristics
Will Semiconductor Ltd.
5
Mar,2019- Rev.1.1
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