ESD56201DXX
ESD56201DXX
1-Line, Uni-directional, Transient Voltage Suppressor
http//:www.sh-willsemi.com
Descriptions
The ESD56201DXX is a transient voltage suppressor
designed to protect power interfaces. It is suitable to replace
multiple discrete components in portable electronics.
The ESD56201DXX is specifically designed to protect power
lines.
The ESD56201DXX is available in DFN1610-2L package.
Standard products are Pb-free and Halogen-free.
DFN1610-2L (Bottom View)
Features
Pin1
Pin2
Reverse stand-off voltage: 4.85V ~ 24V
Surge protection according to IEC61000-4-5
see
Table 4
ESD protection according to IEC61000-4-2
±30kV (contact and air discharge)
Low clamping voltage
Solid-state silicon technology
Pin1
Circuit diagram
Applications
Power supply protection
Power management
x*
Pin2
X= Device code (H I J K L S N M)
* = Month code
Marking (Top View)
Order information
Table 1.
Device
ESD56201D04-2/TR
ESD56201D05-2/TR
Package
Shipping
Marking
H*
I*
J*
K*
L*
S*
N*
M*
DFN1610-2L 10000/Tape&Reel
DFN1610-2L 10000/Tape&Reel
ESD56201D10-2/TR DFN1610-2L 10000/Tape&Reel
ESD56201D12-2/TR DFN1610-2L 10000/Tape&Reel
ESD56201D15-2/TR DFN1610-2L 10000/Tape&Reel
ESD56201D18-2/TR DFN1610-2L 10000/Tape&Reel
ESD56201D20-2/TR DFN1610-2L 10000/Tape&Reel
ESD56201D24-2/TR DFN1610-2L 10000/Tape&Reel
Will Semiconductor Ltd.
1
Revision 1.7, 2019/07/17
ESD56201DXX
Absolute maximum ratings
Table 2.
Parameter
Peak pulse power (tp = 8/20μs)
ESD according to IEC61000-4-2 air discharge
ESD according to IEC61000-4-2 contact discharge
Junction temperature
Operating temperature
Lead temperature
Storage temperature
Symbol
P
pk
V
ESD
T
J
T
OP
T
L
T
STG
Rating
1800
±30
±30
125
-40~85
260
-55~150
Unit
W
kV
o
o
o
o
C
C
C
C
Electrical characteristics
(T
A
= 25
o
C, unless otherwise noted)
I
I
PP
V
F
I
F
V
FC
I
PP
Forward voltage
Forward current
Forward clamping voltage
Peak pulse current
V
RWM
Reverse stand-off voltage
I
R
V
BR
V
CL
I
PP
I
BR
I
R
V
RWM
V
BR
V
CL
I
F
Reverse leakage current
Reverse breakdown voltage
Clamping voltage
Peak pulse current
V
FC
V
F
V
I
PP
Definitions of electrical characteristics
Will Semiconductor Ltd.
2
Revision 1.7, 2019/07/17
ESD56201DXX
Electrical characteristics
(T
A
= 25
o
C, unless otherwise noted)
Table 3.
Reverse
Stand-off
Type number
Voltage
V
RWM
(V)
Max.
ESD56201D04
ESD56201D05
ESD56201D10
ESD56201D12
ESD56201D15
ESD56201D18
ESD56201D20
ESD56201D24
4.85
5.0
10.0
12.0
15.0
18.0
20.0
24.0
Breakdown voltage
V
BR
(V)
I
BR
= 1mA
Reverse
leakage current
I
RM
(μA) at V
RWM
Type.
-
-
-
-
-
-
-
-
Junction
Forward voltage
V
F
(V) I
F
= 20mA
capacitance
F = 1MHz,
VR=0V (pF)
Min.
0.45
0.45
0.45
0.45
0.45
0.45
0.45
0.45
Min.
5.2
6.6
10.7
12.7
16.0
19.2
21.4
25.6
Typ.
5.7
7.1
11.3
13.7
17.5
21.1
23.2
27.5
Max.
6.2
7.6
12.3
14.6
19.0
23.0
25.0
30.0
Max.
5.0
2.0
0.1
0.1
0.1
0.1
0.1
0.1
Max.
1.25
1.25
1.25
1.25
1.25
1.25
1.25
1.25
Typ.
1100
1050
545
425
325
270
250
210
Max.
1300
1250
650
510
350
300
275
250
Table 4.
Rated peak pulse current
I
PP
（A）
Type number
Max.
ESD56201D04
ESD56201D05
ESD56201D10
ESD56201D12
ESD56201D15
ESD56201D18
ESD56201D20
ESD56201D24
120
100
86
75
60
50
45
40
Typ.
10.5
11.0
17.5
19.5
27.0
32.0
35.0
39.0
Max.
12.0
13.0
20.0
22.0
30.0
35.0
38.0
42.0
1)2)
Clamping voltage
V
CL
(V) at I
PP
（A）
1)2)
Notes:
1)
2)
Non-repetitive current pulse, according to IEC61000-4-5. (8/20μs current waveform)
Measured from pin 1 to pin 2.
Will Semiconductor Ltd.
3
Revision 1.7, 2019/07/17
ESD56201DXX
Electrical characteristics
(T
A
= 25
o
C, unless otherwise noted)
Front time: T
1
= 1.25
T = 8μs
Time to half-value:
T
2
= 20μs
Peak pulse current (%)
100
90
100
90
50
T
2
Current (%)
10
10
0
0
T
5
T
1
10
15
Time (μs)
20
25
30
30ns
t
r
= 0.7~1ns
60ns
t
Time (ns)
8/20μs waveform per IEC61000-4-5
40
ESD56201D24
Contact discharge current waveform per IEC61000-4-2
Pulse waveform: t
p
= 8/20
s
ESD56201D20
ESD56201D18
V
C
- Clamping voltage (V)
35
30
25
20
15
10
ESD56201D15
ESD56201D12
Peak pulse power (kW)
ESD56201D10
1
ESD56201D05
10
ESD56201D04
5
0
25
50
75
100
125
0.1
1
I
PP
- Peak pulse current (A)
10
100
Pulse time (
s)
1000
Clamping voltage vs. Peak pulse current
Non-repetitive peak pulse power vs. Pulse time
2400
100
I
R
-Leakage current (nA)
2000
ESD56201D04
% of Rated power
80
60
40
20
0
1600
1200
800
ESD56201D05
400
0
0
25
50
75
100
o
125
150
-40
-20
0
20
40
60
o
80
T
A
- Ambient temperature ( C)
T
A
- Ambient temperature ( C)
Power derating vs. Ambient temperature
Leakage current vs. Ambient temperature
Will Semiconductor Ltd.
4
Revision 1.7, 2019/07/17
ESD56201DXX
PACKAGE OUTLINE DIMENSIONS
DFN1610-2L
D
L
E
b
e
h
TOP VIEW
BOTTOM VIEW
A3
SIDE VIEW
Symbol
A
A1
c
b
L
D
E
e
h
Recommended PCB Layout (Unit: mm)
0.600
0.625
A1
A
Dimensions in Millimeters
Min.
0.45
0.00
Typ.
0.50
0.02
0.15 Ref.
0.75
0.35
1.55
0.95
0.80
0.40
1.60
1.00
1.10 BSC
0.20 Ref.
0.85
0.45
1.65
1.05
Max.
0.55
0.05
1.000
Notes:
This recommended land pattern is for reference
purposes only. Please consult your manufacturing
group to ensure your PCB design guidelines are met.
5
Revision 1.7, 2019/07/17
1.225
1.850
Will Semiconductor Ltd.
h
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