WSB5543W
WSB5543W
Middle Power Schottky Barrier Diode
Http://www.sh-willsemi.com
Features
1.0A Average rectified forward current
Trench MOS Schottky technology
Low forward voltage,low leakage current
Small package SOD-323F
Circuit
SOD-323F
Applications
Switching circuit
Middle current rectification
Marking
Absolute maximum ratings
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current
(1)
Forward peak surge current
(2)
Junction temperature
Operating temperature
Storage temperature
Symbol
V
RM
V
R
I
O
I
FSM
T
J
Topr
Tstg
Value
40
40
1.0
7
-55 ~ 150
-55 ~ 150
-55 ~ 150
Unit
V
V
A
A
O
C
C
C
O
O
Electronics characteristics
(T
A
=25
o
C)
Parameter
Forward voltage
(3)
Reverse current
Junction capacitance
Thermal resistance
(4)
Order Informations
Device
WSB5543W-2/TR
Note 2: Pulse Width=8.3ms, Single sine Pulse
Note 3: Single Pulse test tp=380us;
Note 4: Soldering point of cathode tab；
Note 5:* = Month code (A~Z); DA = Device code
Symbol
V
F
I
R
C
J
R
θJSP
Condition
I
F
=1.0A
V
R
=V
R
V
R
=1V, F=1MHz
Junction to Soldering point
Min.
-
-
-
-
Typ.
0.48
8
80
-
Max.
0.57
50
-
60
Unit
V
uA
pF
K/W
Package
SOD-323F
Marking
DA*
(5)
Shipping
3000/Reel&Tape
Note 1: Duty cycle=0.5，f=20kHz，square wave;
Will Semiconductor Ltd.
1
Mar, 2017 - Rev. 1.1
WSB5543W
Typical characteristics
(Ta=25
o
C, unless otherwise noted)
1
Forward Current(A)
150 C
125 C
o
o
10000
1000
Reverse Current(uA)
125 C
o
85 C
o
100
10
1
0.1
0.01
-50 C
o
0.1
85 C
65 C
25 C
o
o
o
65 C
o
25 C
o
0.01
0C
o
0C
o
-50 C
o
1E-3
0.0
0.1
0.2
0.3
0.4
0.5
1E-3
10
20
30
40
Forward Voltage(V)
Reverse Voltage(V)
Forward voltage vs. Forward current
Reverse current vs. Reverse voltage
1.2
(1)
1000
C
j
-Junction Capcitance(pF)
Average Forward Current (A)
100
Ta=25 C,f=1MHz
o
0.8
10
0.4
1
0.0
0
25
50
75
T
sp
( C)
o
100
125
150
0.1
0
5
10
15
20
25
Reverse Voltage(V)
Current Derating
Junction capacitance vs. Reverse voltage
Will Semiconductor Ltd.
2
Mar, 2017 - Rev. 1.1
WSB5543W
PACKAGE OUTLINE DIMENSIONS
SOD-323F
D
D1
E
b
TOP VIEW
SIDE VIEW
A
SIDE VIEW
Symbol
A
c
b
D1
E
D
Dimensions in Millimeters
Min.
0.60
0.08
0.25
1.60
1.15
2.30
Typ.
-
0.13
-
1.70
1.25
2.50
0.71
1.28
0.403
c
Max.
1.10
0.18
0.40
1.80
1.35
2.80
2.7
Land Pattern Recommendation
Will Semiconductor Ltd.
3
Mar, 2017 - Rev. 1.1
WSB5543W
TAPE AND REEL INFORMATION
Reel Dimensions
Reel Dimensions
Tape Dimensions
RD
P1
Quadrant Assignments For PIN1 Orientation In Tape
Q1
Q2
Q1
Q2
User Direction of Feed
Q3
Q4
Q3
Q4
RD
W
P1
Pin1
Reel Dimension
Overall width of the carrier tape
Pitch between successive cavity centers
Pin1 Quadrant
7inch
13inch
12mm
4mm
Q2
16mm
8mm
Q3
Q4
1
8mm
2mm
Q1
Will Semiconductor Ltd.
4
Mar, 2017 - Rev. 1.1
W
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