WNM2077
WNM2077
Single N-Channel, 20V, 0.54A, Power MOSFET
V
DS
(V)
20
Rds(on) (Ω)
0.420@ V
GS
=4.5V
0.580@ V
GS
=2.5V
0.840@ V
GS
=1.8V
ESD Protected
SOT-723
Http//:www.willsemi.com
Descriptions
The WNM2077 is N-Channel enhancement MOS
Field
Effect Transistor. Uses advanced trench
1
G
D
3
technology and design to provide excellent R
DS (ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WNM2077 is Pb-free.
2
S
Pin configuration (Top view)
Features
●
●
●
●
●
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
Extremely Low Threshold Voltage
Small package SOT-723
NB
*
= Device Code
= Month (A~Z)
Marking
Applications
●
●
●
●
●
Driver for Relay, Solenoid, Motor, LED etc.
DC-DC converter circuit
Power Switch
Load Switch
Charging
1
Order information
Device
WNM2077-3/TR
Package
SOT-723
Shipping
8000/Reel&Tape
Will Semiconductor Ltd.
Sep, 2015 - Rev.1.0
WNM2077
Absolute Maximum ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
ad
Symbol
V
DS
V
GS
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
D
P
D
I
D
P
D
I
DM
T
J
T
L
T
stg
10 S
Steady State
20
±10
Unit
V
0.54
0.43
0.36
0.23
0.49
0.39
0.29
0.18
0.9
150
260
0.51
0.41
0.31
0.20
0.44
0.35
0.23
0.14
A
W
A
W
A
°C
°C
°C
Maximum Power Dissipation
Continuous Drain Current
bd
ad
Maximum Power Dissipation
Pulsed Drain Current
Lead Temperature
Storage Temperature Range
c
bd
Operating Junction Temperature
-55 to 150
Thermal resistance ratings
Parameter
Junction-to-Ambient Thermal Resistance
Junction-to-Ambient Thermal Resistance
Junction-to-Case Thermal Resistance
a
Symbol
t ≤ 10 s
Steady State
b
Typical
255
325
375
445
220
Maximum
345
395
430
535
300
Unit
R
θJA
R
θJA
R
θJC
t ≤ 10 s
Steady State
Steady State
°C/W
a
b
c
d
Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper
Surface mounted on FR-4 board using minimum pad size, 1oz copper
Pulse width<380μs, Duty Cycle<2%
Maximum junction temperature T
J
=150°C.
Will Semiconductor Ltd.
2
Sep, 2015 - Rev.1.0
WNM2077
Electronics Characteristics
(Ta=25
o
C, unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Forward Transconductance
V
GS(TH)
g
FS
V
GS
= V
DS
, I
D
= 250uA
V
DS
= 10V, I
D
= 0.35A
V
GS
= 4.5V, I
D
= 0.35A
Drain-to-source On-resistance
b, c
Symbol
Test Conditions
Min
Typ
Max
Unit
BV
DSS
I
DSS
I
GSS
V
GS
= 0 V, I
D
= 250uA
V
DS
= 16V, V
GS
= 0V
V
DS
= 0 V, V
GS
= ±10V
20
1
±5
V
uA
uA
0.45
0.70
0.85
420
500
580
840
1100
1.0
600
700
800
1300
1600
V
S
V
GS
= 3.1V, I
D
= 0.20A
R
DS(on)
V
GS
= 2.5V, I
D
= 0.20A
V
GS
= 1.8V, I
D
= 0.20A
V
GS
= 1.5V, I
D
= 0.04A
mΩ
CAPACITANCES, CHARGES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
BODY DIODE CHARACTERISTICS
Forward Voltage
V
SD
V
GS
= 0 V, I
S
= 0.3A
0.85
1.5
V
td(ON)
tr
td(OFF)
tf
V
GS
= 4.5 V,
V
DD
= 10 V,
I
D
=0.54 A,
R
G
=6 Ω
7.2
9.5
19.6
4.6
ns
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
V
GS
= 0 V,
f = 1MHz,
V
DS
= 10 V
V
GS
= 4.5 V,
V
DS
= 10 V,
I
D
= 0.54A
30
7
5
1.07
0.12
0.32
0.14
nC
pF
Will Semiconductor Ltd.
3
Sep, 2015 - Rev.1.0
WNM2077
Typical Characteristics
(Ta=25
o
C, unless otherwise noted)
2.0
1.0
I
DS
-Drain-to Source Current (A)
V
GS
=3.0V~4.5V
1.5
V
GS
=2.5V
I
DS
-Drain-to-Source Current (A)
0.8
V
DS
=1.0V
0.6
1.0
V
GS
=2.0V
T= -50 C
T= 25 C
o
o
0.4
T= 150 C
o
0.5
V
GS
=1.5V
0.2
0.0
0.0
0.5
1.0
1.5
2.0
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
-Drain-to-Source Voltage (V)
V
GS
-Gate-to-Source Voltage (V)
Output Characteristics
1.0
2.0
Transfer Characteristics
R
DS(ON)
-On-Resistance (
)
0.8
R
DS(ON)
-On-Resistance (
)
0.6
0.8
V
GS
=1.8V
1.5
0.6
V
GS
=2.5V
V
GS
=3.1V
1.0
0.4
V
GS
=4.5V
0.2
0.5
0.0
0.2
0.4
0.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
I
DS
-Drain-to-Source Current (A)
V
GS
-Gate-to-Source Voltage (V)
On Resistance vs. Drain Current
1.6
1.5
On Resistance vs.
Gate-to-Source Voltage
V
GS(TH)
Gate Threshold Voltage
V
GS
=4.5V,I
D
=0.54A
1.3
I
D
=250uA
R
DS(ON)
-On-Resistance
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75
100
125
150
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50
Normalize
Normalize
Temperature
(
o
C
)
-25
0
25
50
75
o
100
125
150
Temperature
(
C
)
On Resistance vs. Junction Temperature
Will Semiconductor Ltd.
Threshold Voltage vs. Temperature
4
Sep, 2015 - Rev.1.0
WNM2077
60
50
0.8
F=1MHz
I
S
-Source-to-Drain Current (A)
V
GS
=0V
C -Capacitance (pF)
0.6
40
30
C
iss
0.4
T=150 C
o
20
10
0
C
oss
C
rss
0.2
T=25 C
o
2
4
6
8
10
0.0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
V
DS
-Drain Voltage (V)
V
SD
-Source-to-Drain Voltage (V)
Capacitance
Body Diode Forward Voltage
4
V
GS
=4.5V, V
DS
=10V, I
D
=0.54A
1
3
I
D
-Drain Current (A)
Gate Voltage (V)
0.1
Limited by R
DS(on)
1ms
10ms
100ms
1s
10s
DC
2
0.01
1
T
A
=25 C
Single Pulse
o
0
0.0
0.4
0.8
1.2
1E-3
0.1
1
10
100
Qg (nc)
V
DS
-Drain-to-Source Voltage (V)
Gate Charge Characteristics
Safe Operating Power
Transient Thermal Response (Junction-to-Ambient)
Will Semiconductor Ltd.
5
Sep, 2015 - Rev.1.0
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