ESD9X5V
ESD9X5V
1-Line, Uni-directional, Transient Voltage Suppressor
http//:www.sh-willsemi.com
Descriptions
The ESD9X5V is a Uni-directional TVS (Transient Voltage
Suppressor) designed to protect sensitive electronic
components from damage due to ESD (Electrostatic
Discharge), EFT (Electrical Fast Transients) and CDE
(Cable Discharge Event). The ESD9X5V has been
specifically designed to replace MLV (Multilayer Varistor) in
portable application such as cellular handsets, notebook
computers, tablets and PADs.
Pin1
Pin2
FBP-02C (Bottom view)
The ESD9X5V is based on solid-state silicon technology
and offer unique electrical characteristics like lower
clamping voltage and no device degrading compared to
MLV.
The ESD9X5V may be used to provide ESD protection up
to ±30kV (contact discharge) according to IEC61000-4-2,
and withstand peak pulse current up to 11A (8/20μs)
according to IEC61000-4-5.
The ESD9X5V is available in FBP-02C package. Standard
products are Pb-free and Halogen-free.
Circuit diagram
Pin1
*H
* = Month (A~Z)
H = Device code
Pin2
Marking (Top View)
Features
Stand-off voltage: 5V Max.
Transient protection for each line according to
IEC61000-4-2 (ESD): ±30kV (contact discharge)
IEC61000-4-5 (surge): 11A (8/20μs)
Capacitance: C
J
= 60pF typ.
Low clamping voltage
Solid-state silicon technology
Device
ESD9X5V-2/TR
Package
FBP-02C
Shipping
10000/Tape&Reel
Order information
Applications
Cellular handsets
Tablets
Computers and peripherals
Notebooks
Digital camera
Other electronic equipment
Will Semiconductor Ltd.
1
Revision 2.5, 2016/07/06
ESD9X5V
Absolute maximum ratings
Parameter
Peak pulse power (t
p
= 8/20μs)
Peak pulse current (t
p
= 8/20μs)
ESD according to IEC61000-4-2 air discharge
ESD according to IEC61000-4-2 contact discharge
Junction temperature
Operating temperature
Lead temperature
Storage temperature
Symbol
P
pk
I
PP
V
ESD
T
J
T
OP
T
L
T
STG
Rating
154
11
±30
±30
125
-40~85
260
-55~150
Unit
W
A
kV
o
o
o
o
C
C
C
C
Electronics characteristics
(T
A
= 25
o
C, unless otherwise noted)
Parameter
Reverse stand-off voltage
Reverse leakage current
Reverse breakdown voltage
Forward voltage
Clamping voltage
Junction capacitance
Symbol
V
RWM
I
R
V
BR
V
F
V
CL
C
J
V
RWM
= 5V
I
T
= 1mA
I
F
= 1mA
I
PP
= 1A, t
p
= 8/20μs
I
PP
= 11A, t
p
= 8/20μs
V
R
= 0V, f = 1MHz
60
6.2
0.4
6.8
0.8
Condition
Min.
Typ.
Max.
5.0
1.0
7.6
1.3
7.5
14
70
Unit
V
μA
V
V
V
V
pF
Will Semiconductor Ltd.
2
Revision 2.5, 2016/07/06
ESD9X5V
Typical characteristics
(T
A
= 25
o
C, unless otherwise noted)
100
90
Front time: T
1
= 1.25
T = 8
s
Time to half-value:
T
2
= 20
s
100
90
Peak pulse current (%)
50
T
2
Current (%)
10
10
0
0
T
T
1
20
Time (
s)
30ns
t
r
= 0.7~1ns
60ns
t
Time (ns)
8/20μs waveform per IEC61000-4-5
Contact discharge current waveform per IEC61000-4-2
16
V
C
- Clamping voltage (V)
14
12
10
8
6
C
J
- Junction capacitance (pF)
Pulse waveform: t
p
= 8/20
s
70
60
50
40
30
20
f = 1MHz
V
AC
= 50mV
0
2
4
6
8
10
12
0
1
2
3
4
5
I
PP
- Peak pulse current (A)
V
R
- Reverse voltage (V)
Clamping voltage vs. Peak pulse current
1000
Capacitance vs. Reverse voltage
100
Peak pulse power (W)
% of Rated power
80
60
40
20
0
100
10
1
10
100
Pulse time (
s)
1000
0
25
50
75
100
o
125
150
T
A
- Ambient temperature ( C)
Non-repetitive peak pulse power vs. Pulse time
Power derating vs. Ambient temperature
Will Semiconductor Ltd.
3
Revision 2.5, 2016/07/06
ESD9X5V
Package outline dimensions
FBP-02C
L
D
L2
L1
L3
D1
e1
e
Top View
Symbol
A
A1
A1
Bottom View
Dimensions In Millimeters
Min.
0.450
0.010
0.950
0.550
Typ.
0.500
--
1.000
0.600
0.470 Ref.
0.420 Ref.
0.270
0.250
0.555
0.250
0.370
0.320
0.300
0.605
0.230 Ref.
0.300
0.030 Ref.
0.420
0.040 Ref.
0.470
0.350
0.370
0.350
0.655
Max.
0.550
0.100
1.050
0.650
D
E
D1
E1
b
A
Side View
b1
e
e1
L
Recommend land pattern (Unit: mm)
L1
L2
L3
0.40
0.40
Notes:
This recommended land pattern is for reference
purposes only. Please consult your manufacturing
0.62
0.18
0.50
group to ensure your PCB design guidelines are met.
Will Semiconductor Ltd.
5
Revision 2.5, 2016/07/06
E1
b1
E
b
stm32/stm8
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