UNISONIC TECHNOLOGIES CO., LTD
MMBTA94
HIGH VOLTAGE TRANSISTOR
FEATURES
3
PNP SILICON TRANSISTOR
* Collector-Emitter Voltage: V
CEO
= -400V
* Collector Dissipation: P
C(MAX)
= 350mW
* Low Collector-Emitter Saturation Voltage
APPLICATIONS
2
1
* Telephone Switching
* High Voltage Switch
SOT-23
(JEDEC TO-236)
ORDERING INFORMATION
Ordering Number
Package
B: Base
SOT-23
C: Collector
Pin Assignment
1
2
3
E
B
C
Packing
Tape Reel
Note:
MMBTA94G-AE3-R
Pin Assignment: E: Emitter
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 3
QW-R206-008.F
MMBTA94
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
(T
A
=25°С unless otherwise specified)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-400
V
Collector-Emitter Voltage
V
CEO
-400
V
Emitter-Base Voltage
V
EBO
-6
V
Collector Current
I
C
-300
mA
Collector Dissipation (Ta=25C)
P
C
350
mW
Junction Temperature
T
J
+150
°С
Storage Temperature
T
STG
-40~+150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
A
=25°С, unless otherwise specified)
MIN
-400
-400
-400
-5
TYP
MAX UNIT
V
V
V
V
-100 nA
-1
µA
100
nA
300
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Base Breakdown Voltage
BV
CBO
I
C
= -100µA, I
E
=0
Collector-Emitter Breakdown Voltage
BV
CEO
I
C
= -1mA, I
B
=0
Collector-Emitter Breakdown Voltage
BV
CES
I
C
= -100µA,V
BE
=0
Emitter-Base Breakdown Voltage
BV
EBO
I
E
= -100µA, I
C
=0
Collector Cut-off Current
I
CBO
V
CB
= -300V, I
E
=0
Collector Cut-off Current
I
CES
V
CB
= -400V, V
BE
=0
Emitter Cut-off Current
I
EBO
V
EB
= -4V, I
C
=0
V
CE
= -10V, I
C
= -1mA
V
CE
= -10V, I
C
= -10mA
DC Current Gain (Note)
h
FE
V
CE
= -10V, I
C
= -50mA
V
CE
= -10V, I
C
= -100mA
I
C
= -10mA, I
B
= -1mA
Collector-Emitter Saturation Voltage
V
CE(SAT)
I
C
= -50mA, I
B
= -5mA
Base-Emitter Saturation Voltage
V
BE(SAT)
I
C
= -10mA, I
B
= -1mA
Output Capacitance
Cob
V
CB
= -20V,I
E
=0, f =1MHz
Note: Pulse test: PW<300µs, Duty Cycle<2%
60
70
70
40
-0.20
-0.5
-0.75
7
V
V
V
pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R206-008.F
MMBTA94
TYPICAL CHARACTERISTICS
DC Current Gain
1000
V
CE
=-10V
-10
PNP SILICON TRANSISTOR
Base-Emitter Saturation Voltage
I
C
=10×I
B
Base-Emitter Saturation Voltage,
V
BE(SAT)
(V)
-1
-10
-100
-1000
h
FE
,DC Current Gain
100
-1.0
10
-0.1
1
-0.01
-1
-10
-100
-1000
Collector Current, I
C
(mA)
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage,
V
CE(SAT)
(V)
-10
Collector Current, I
C
(mA)
Collector Output capacitance
1000
Collector Output Capacitance (pF)
I
C
=10×I
B
I
E
=0
f=1MHz
-1.0
100
-0.1
10
-0.01
-1
-10
-100
1
-0.1
-1
-10
-100
Collector Current, I
C
(mA)
Collector Base Voltage (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 3
QW-R206-008.F
微控制器 MCU
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