UNISONIC TECHNOLOGIES CO., LTD
2SC4617
GENERAL PURPOSE
TRANSISTOR
FEATURES
NPN SILICON TRANSISTOR
* Low Cob
Cob=2.0pF (typ)
* Complements the UTC 2SA1774
ORDERING INFORMATION
Ordering Number
Halogen Free
2SC4617G-x-AB3-R
2SC4617G-x-AE3-R
2SC4617G-x-AL3-R
2SC4617G-x-AN3-R
2SC4617G-x-AQ3-R
Pin assignment: E: Emitter
B: Base
Package
SOT-89
SOT-23
SOT-323
SOT-523
SOT-723
C: Collector
Pin Assignment
1
2
3
B
C
E
E
B
C
E
B
C
E
B
C
E
B
C
Packing
Tape Reel
Tape Reel
Tape Reel
Tape Reel
Tape Reel
Note:
MARKING
SOT-89
SOT-23 / SOT-323 / SOT-523 / SOT-723
C5G
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Copyright © 2015 Unisonic Technologies Co., Ltd
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ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C)
NPN SILICON TRANSISTOR
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V
CBO
60
V
Collector-Emitter Voltage
V
CEO
50
V
Emitter-Base Voltage
V
EBO
7
V
Collector Current
I
C
0.15
A
SOT-89
500
mW
SOT-523
150
mW
Collector Power Dissipation
P
C
SOT-23/SOT-323
200
mW
SOT-723
125
mW
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(Ta= 25°C, unless otherwise specified)
SYMBOL
TEST CONDITIONS
BV
CBO
I
C
= 50μA
BV
CEO
I
C
= 1mA
BV
EBO
I
E
=50μA
I
CBO
V
CB
=60V
I
EBO
V
EB
= 7V
h
FE
V
CE
=6V, I
C
=1mA
V
CE(SAT)
I
C
=50mA, I
B
=5mA
f
T
V
CE
=12V, I
E
= -2mA, f=100MHz
C
ob
V
CE
= 12V, I
E
= 0A, f=1MHz
MIN
60
50
7
TYP
MAX
UNIT
V
V
V
μA
μA
V
MHz
pF
PARAMETER
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter-base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Output Capacitance
120
180
2
0.1
0.1
560
0.4
3.5
CLASSIFICATION OF h
FE
RANK
RANGE
Q
120 ~ 270
R
180 ~ 390
S
270 ~ 560
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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TYPICAL CHARACTERISTICS
Grounded Emitter Propagation
Characteristics
50
Collector Current, I
C
(mA)
20
10
5
2
1
0.5
0.2
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Base to Emitter Voltage, V
BE
(V)
T
A
=100°C
25°C
-55°C
V
CE
= 6V
Collector Current, I
C
(mA)
NPN SILICON TRANSISTOR
Grounded Emitter Output Characteristics (I)
100
T
A
=25°C
80
60
40
20
0
0
0.4
0.8
1.2
0.50mA
0.45mA
0.40mA
0.35mA
0.30mA
0.25mA
0.20mA
0.15mA
0.10mA
0.05mA
I
B
= 0A
1.6
2.0
Collector to Emitter Voltage, V
CE
(V)
Collector Current, I
C
(mA)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Collector Saturation Voltage,
V
CE(SAT)
(V)
DC Current Gain, h
FE
DC Current Gain, h
FE
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Base Collector Time Constant (ps)
Transition Frequency, f
T
(MHz)
Collector saturation voltage, V
CE(sat)
(V)
TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGIES CO., LTD
Collector Output Capacitance, C
ob
(pF)
Emitter Input Capacitance, C
ib
(pF)
www.unisonic.com.tw
Collector Saturation Voltage,
V
CE(SAT)
(V)
NPN SILICON TRANSISTOR
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NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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