UNISONIC TECHNOLOGIES CO., LTD
17P10
-17A, -100V P-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The
17P10
uses advanced proprietary, planar stripe, DMOS
technology to provide excellent R
DS(ON)
, low gate charge and
operation with low gate voltages. This device is suitable to be
used in low voltage applications such as audio amplifier, high
efficiency switching DC/DC converters, and DC motor control.
FEATURES
* R
DS(ON)
< 0.18Ω @ V
GS
=-10V, I
D
=-8.25A
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified
SYMBOL
ORDERING INFORMATION
Package
TO-220
TO-220F1
TO-220F2
TO-220F
TO-251
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tube
Tape Reel
Ordering Number
Lead Free
Halogen Free
17P10L-TA3-T
17P10G-TA3-T
17P10L-TF1-T
17P10G-TF1-T
17P10L-TF2-T
17P10G-TF2-T
17P10L-TF3-T
17P10G-TF3-T
17P10L-TM3-T
17P10G-TM3-T
17P10L-TN3-R
17P10G-TN3-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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Copyright © 2017 Unisonic Technologies Co., Ltd
1 of 6
QW-R210-022.C
17P10
MARKING
Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD
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QW-R210-022.C
17P10
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°С, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
-100
V
Gate-Source Voltage
V
GSS
±30
V
Continuous Drain Current
I
D
-17
A
Pulsed Drain Current (Note 2)
I
DM
-52
A
Avalanche Current (Note 2)
I
AR
-17
A
Single Pulsed Avalanche Energy (Note 3)
E
AS
160
mJ
Repetitive Avalanche Energy (Note 2)
E
AR
17
mJ
Peak Diode Recovery dv/dt
dv/dt
2.0
V/ns
TO-220
100
W
TO-220F/TO-220F1
Power Dissipation
41
W
TO-220F2
TO-251/TO-252
70
W
P
D
TO-220
0.67
W/°C
TO-220F/TO-220F1
Derate above 25°C
0.27
W/°C
TO-220F2
0.56
W/°C
TO-251/TO-252
Junction Temperature
T
J
+150
°С
Storage Temperature
T
STG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by T
J(MAX)
3. L=3.2mH, I
AS
=-10A, V
DD
=-50V, R
G
=25Ω, Starting T
J
=25°C
4. I
SD
≤-17A,
di/dt
≤
200μA/ s, V
DD
≤BV
DSS
, Starting T
J
=25°C
THERMAL DATA
SYMBOL
θ
JA
RATING
62.5
110
0.5
θ
JC
3.66
1.78
°C/W
UNIT
°C/W
PARAMETER
TO-220/TO-220F
TO-220F1/TO-220F2
Junction to Ambient
TO-251/TO-252
TO-220
TO-220F/TO-220F1
Junction to Case
TO-220F2
TO-251/TO-252
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R210-022.C
17P10
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
SYMBOL
BV
DSS
I
DSS
TEST CONDITIONS
V
GS
=0 V, I
D
=-250µA
V
DS
=-100V, V
GS
=0V
V
DS
=-100V, T
C
=125°C
V
DS
=0V, V
GS
=±30V
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Power MOSFET
MIN TYP MAX UNIT
-100
-1
-10
±100
V
µA
µA
nA
V
Ω
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
ns
μC
Gate-Source Leakage Current
I
GSS
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=-250µA
-2.0
-4.0
Static Drain-Source On-Resistance
R
DS(ON)
V
GS
=-10V, I
D
=-8.25A
0.18
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
1510
V
DS
=-25V, V
GS
=0V, f=1.0MHz
Output Capacitance
C
OSS
190
60
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
140
V
DS
=-50V, V
GS
=-10V, I
D
=-1.3A
Gate Source Charge
Q
GS
12
I
G
=-100µA (Note 1, 2)
9.5
Gate Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
52
V
DD
=-30V, V
GS
=-10V, I
D
=-0.5A,
Turn-ON Rise Time
t
R
86
R
G
=25Ω (Note 1, 2)
Turn-OFF Delay Time
t
D(OFF)
420
Turn-OFF Fall-Time
t
F
100
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
-17
Maximum Pulsed Drain-Source Diode
I
SM
-52
Forward Current
Diode Forward Voltage
V
SD
V
GS
=0V, I
S
=-17A
-6
Body Diode Reverse Recovery Time
t
RR
V
GS
= 0V, I
S
=17A, dI
F
/dt=100A/μs
140
(Note 1)
Body Diode Reverse Recovery Charge
Q
RR
0.72
Notes: 1. Pulse Test : Pulse width
≤
300μs, Duty cycle
≤
2%.
2. Essentially independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R210-022.C
17P10
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
di/dt
Body Diode Reverse Current
V
DS
(D.U.T.)
V
DD
Body Diode Recovery dv/dt
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R210-022.C
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