UNISONIC TECHNOLOGIES CO., LTD
5N65K-MTQ
5A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
5N65K-MTQ
is a high voltage power MOSFET
designed to have better characteristics, such as fast switching time,
low gate charge, low on-state resistance and high rugged avalanche
characteristics. This power MOSFET is usually used in high speed
switching applications at power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
FEATURES
* R
DS(ON)
< 2.2Ω @ V
GS
= 10 V, I
D
= 2.5 A
* Fast Switching Capability
* Improved dv/dt Capability, High Ruggedness
SYMBOL
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QW-R209-078.B
5N65K-MTQ
ORDERING INFORMATION
Package
TO-220
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-251
TO-251S
TO-251S2
TO-251S4
TO-252
TO-252D
Ordering Number
Lead Free
Halogen Free
5N65KL-TA3-T
5N65KG-TA3-T
5N65KL-TF3-T
5N65KG-TF3-T
5N65KL-TF1-T
5N65KG-TF1-T
5N65KL-TF2-T
5N65KG-TF2-T
5N65KL-TF3-T
5N65KG-TF3-T
5N65KL-TM3-T
5N65KG-TM3-T
5N65KL-TMS-T
5N65KG-TMS-T
5N65KL-TMS2-T
5N65KG-TMS2-T
5N65KL-TMS4-T
5N65KG-TMS4-T
5N65KL-TN3-R
5N65KG-TN3-R
5N65KL-TND-R
5N65KG-TND-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source
Power MOSFET
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
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Tube
Tube
Tube
Tube
Tape Reel
Tape Reel
MARKING
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QW-R209-078.B
5N65K-MTQ
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
650
V
Gate-Source Voltage
V
GSS
±30
V
Continuous Drain Current
I
D
5
A
Pulsed Drain Current (Note 2)
I
DM
20
A
Avalanche Energy
Single Pulsed (Note 3)
E
AS
264
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
6.5
V/ns
TO-220
108
TO-220F/TO-220F1
36
TO-220F3
Power Dissipation
P
D
W
TO-220F2
38
TO-251/TO-251S
TO-251S2/TO-251S4
54
TO-252/TO-252D
Junction Temperature
T
J
+150
°C
Operation Temperature
T
OPR
-55 ~ +150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L=25mH, I
AS
=4.6A, V
DD
=50V, R
G
=25
Ω,
Starting T
J
= 25°C
4. I
SD
≤5A,
di/dt≤200A/μs, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL RESISTANCES CHARACTERISTICS
SYMBOL
RATINGS
62.5
θ
JA
110
1.15
3.47
θ
JC
3.28
2.3
°C/W
°C/W
°C/W
°C/W
°C/W
UNIT
°C/W
PARAMETER
TO-220/TO-220F
TO-220F1/TO-220F2
TO-220F3
Junction to Ambient
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
TO-220
TO-220F/TO-220F1
TO-220F3
Junction to Case
TO-220F2
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
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QW-R209-078.B
5N65K-MTQ
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise specified)
SYMBOL
BV
DSS
I
DSS
Forward
Reverse
I
GSS
TEST CONDITIONS
V
GS
=0V, I
D
= 250μA
V
DS
=650V, V
GS
= 0V
V
GS
=30V, V
DS
= 0V
V
GS
=-30V, V
DS
= 0V
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Power MOSFET
MIN TYP MAX UNIT
650
1
100
-100
2.0
4.0
2.2
636
69
4.3
14.5
7.2
2.5
46
25
114
27
5
20
1.4
280
3.0
V
μA
nA
V
Ω
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
nS
μC
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
= 250μA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
= 2.5A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V,
Output Capacitance
C
OSS
f = 1.0MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Total Gate Charge
Q
G
V
DS
= 100 V, I
D
= 5.0A,
I
D
= 1mA, V
GS
= 10 V
Gate-Source Charge
Q
GS
(Note 1, 2)
Gate-Drain Charge
Q
GD
Turn-On Delay Time
t
D(ON)
V
DD
= 30V, I
D
= 5.0A, V
GS
= 10V
Turn-On Rise Time
t
R
R
G
= 25Ω (Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
Turn-Off Fall Time
t
F
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0 V, I
S
= 5A
Body Diode Reverse Recovery Time
t
rr
I
S
=5.0A, V
GS
=0V,
dI
F
/dt=100A/μs
Body Diode Reverse Recovery Charge
Q
rr
Note: 1. Pulse Test: Pulse width
≤
300μs, Duty cycle
≤
2%
2. Essentially independent of operating temperature.
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QW-R209-078.B
5N65K-MTQ
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
D.U.T.
+
V
DS
-
+
-
L
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
V
GS
(Driver)
P.W.
Period
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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QW-R209-078.B
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