UNISONIC TECHNOLOGIES CO., LTD
2SA1015
LOW FREQUENCY PNP
AMPLIFIER TRANSISTOR
FEATURES
1
PNP SILICON TRANSISTOR
* Collector-Emitter Voltage: BV
CEO
=-50V
* Collector Current up to 150mA
* High h
FE
Linearity
* Complement to UTC 2SC1815
TO-92
ORDERING INFORMATION
Package
TO-92
TO-92
Pin Assignment
1
2
3
E
C
B
E
C
B
Packing
Tape Box
Bulk
Ordering Number
Lead Free Plating
Halogen Free
2SA1015L-xx-T92-B
2SA1015G-xx-T92-B
2SA1015L-xx-T92-K
2SA1015G-xx-T92-K
Note: Pin Assignment: E: Emitter
C: Collector
B: Base
MARKING
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Copyright © 2014 Unisonic Technologies Co., LTD
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QW-R201-004.D
2SA1015
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
(T
A
=25°C, unless otherwise specified)
RATINGS
-50
-50
-5
-150
-50
400
UNIT
V
V
V
mA
mA
mW
Junction Temperature
T
J
125
°C
Storage Temperature
T
STG
-55 ~ +125
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
A
=25°C, unless otherwise specified)
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE(SAT)
V
BE(SAT)
C
OB
f
T
NF
TEST CONDITIONS
I
C
=-100μA, I
E
=0
I
C
=-10mA, I
B
=0
I
E
=-10μA, I
C
=0
V
CB
=-50V, I
E
=0
V
EB
=-5V, I
C
=0
V
CE
=-6V, I
C
=-2mA
V
CE
=-6V, I
C
=-150mA
I
C
=-100mA, I
B
=-10mA
I
C
=-100mA, I
B
=-10mA
V
CB
=-10V, I
E
=0, f=1MHz
V
CE
=-10V, Ic=-1mA
V
CE
=-6V , I
C
=-0.1mA,
R
G
=1kΩ, f=100Hz
MIN
-50
-50
-5
TYP
MAX UNIT
V
V
V
-100
nA
-100
nA
700
-0.3
-1.1
7.0
6
V
V
pF
MHz
dB
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Noise Figure
120
25
-0.1
4.0
80
0.5
CLASSIFICATION OF h
FE1
RANK
RANGE
Y
120-240
GR
200-400
BL
350-700
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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2SA1015
TYPICAL CHARACTERISTICS
Static characteristics
-50
-40
I
B
=-300µA
-30
-20
I
B
=-250µA
I
B
=-200µA
I
B
=-150µA
-10
0
-0
-4
-8
I
B
=-100µA
I
B
=-50µA
-12
-16
-20
10
0
-10
-1
10
1
10
2
10
3
PNP SILICON TRANSISTOR
DC Current Gain
V
CE
=-6V
-10
0
-10
1
-10
2
-10
3
Collector-Emitter Voltage, BV
CEO
(V)
Base-Emitter on Voltage
-10
2
1
Collector current, I
C
(mA)
Saturation voltage
-10
I
C
=10xI
B
V
CE
=-6V
-10
1
-10
0
V
BE(SAT)
-10
0
-10
-1
V
CE(SAT)
-10
-1
-10
-2
0
-0.2
-0.4
-0.6
-0.8
-1.0
-10
-1
-10
0
-10
1
-10
2
-10
3
Base-Emitter Voltage, BV
BEO
(V)
Current Gain-Bandwidth Product
Collector Current, I
C
(mA)
Collector Output Capacitance
-10
2
f=1MHz
-10
-1
I
E
=0
10
3
V
CE
=-6V
10
2
-10
1
10
1
-10
0
10
0
-10
-1
-10
-1
-10
0
-10
1
-10
2
-10
0
-10
1
-10
2
-10
3
Collector current, I
C
(mA)
Collector-Base Voltage, BV
CBO
(V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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PNP SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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PCB设计
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