UNISONIC TECHNOLOGIES CO., LTD
UT3N06
N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
UT3N06
is an N-channel power MOSFET
providing very low on-resistance. It has high efficiency and
perfect cost-effectiveness. It can be generally applied in the
commercial and industrial fields.
FEATURES
SYMBOL
Drain
* Simple drive requirement
Gate
Source
ORDERING INFORMATION
Package
SOT-89
SOT-23
TO-251
TO-252
Pin Assignment
1
2
3
G
D
S
S
G
D
G
D
S
G
D
S
Packing
Tape Reel
Tape Reel
Tube
Tape Reel
Ordering Number
Lead Free
Halogen Free
-
UT3N06G-AB3-R
-
UT3N06G-AE3-R
UT3N06L-TM3-T
UT3N06G-TM3-T
UT3N06L-TN3-R
UT3N06G-TN3-R
Note: Pin Assignment: G: Gate D: Drain
S: Source
MARKING
SOT-89
SOT-23
TO-251 / TO-252
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Copyright © 2014 Unisonic Technologies Co., Ltd
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QW-R502-366.G
UT3N06
ABSOLUTE MAXIMUM RATINGS
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
60
V
Gate-Source Voltage
V
GSS
±20
V
Continuous Drain Current
I
D
3.0
A
(V
GS
=4.5V, T
A
= 25°C) (Note 2)
Pulsed Drain Current (Note 3, 4)
I
DM
10
A
SOT-23
0.35
W
Power Dissipation (T
A
= 25°C) SOT-89
P
D
0.69
W
TO-251/TO-252
1.13
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Surface mounted on 1 in
2
copper pad of FR4 board; 270°C/W when mounted on min. copper pad
3. Pulse width limited by T
J(MAX)
4. Pulse width
≤300μs,
duty cycle≤2%
THERMAL DATA
SYMBOL
θ
JA
RATING
350
180
110
UNIT
°C/W
°C/W
°C/W
PARAMETER
SOT-23
Junction to Ambient
SOT-89
TO-251/TO-252
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C, unless otherwise specified)
SYMBOL
BV
DSS
∆
BV
DSS
∆
T
J
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
TEST CONDITIONS
V
GS
=0V, I
D
=250µA
Reference to 25°C, I
D
=1mA
V
DS
=60V,V
GS
=0V
V
GS
=±20V
V
DS
=V
GS
, I
D
=250µA
V
GS
=10V, I
D
=3A
V
GS
=4.5V, I
D
=2A
1.0
MIN
60
0.05
10
±100
3.0
90
120
490
55
40
6
5
16
3
6
1.6
3
780
TYP MAX UNIT
V
V/°C
µA
nA
V
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Drain to Source On-state Resistance
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
Output Capacitance
C
OSS
V
DS
=25V,V
GS
=0V,f =1.0MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Turn-ON Delay Time (Note)
t
D(ON)
Turn-ON Rise Time
t
R
V
GS
=10V, V
DS
=30V, I
D
=1A,
R
D
=30Ω, R
G
=3.3Ω
Turn-OFF Delay Time
t
D(OFF)
Turn-OFF Fall-Time
t
F
Total Gate Charge (Note)
Q
G
Gate Source Charge
Q
GS
V
GS
=4.5V, V
DS
=48V, I
D
=3A
Gate Drain Charge
Q
GD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage (Note)
V
SD
I
S
=1.2A, V
GS
=0V
Reverse Recovery Time
t
rr
I
S
=3A,V
GS
=0V, dI/dt=100A/µs
Reverse Recovery Charge
Q
RR
Note: Pulse width
≤300μs,
duty cycle≤2%.
42
58
10
1.2
25
26
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www.unisonic.com.tw
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QW-R502-366.G
UT3N06
TEST WAVEFORMS
V
G
Power MOSFET
4.5V
Q
G
Q
GS
Q
GD
Charge
Switching Time Waveform
Gate Charge Waveform
Q
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www.unisonic.com.tw
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QW-R502-366.G
UT3N06
TYPICAL CHARACTERISTICS
Power MOSFET
Drain Current, I
D
(µA)
Drain Current, I
D
(A)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Drain Current, I
D
(A)
Drain Current, I
D
(µA)
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