UNISONIC TECHNOLOGIES CO., LTD
2SB776
MEDIUM POWER LOW
VOLTAGE TRANSISTOR
DESCRIPTION
PNP PLANAR TRANSISTOR
The UTC
2SB776
is a medium power low voltage transistor,
designed for audio power amplifier, DC-DC converter and voltage
regulator.
FEATURES
* High Current Output Up to 3A
* Low Saturation Voltage
* Complement to 2SD886
ORDERING INFORMATION
Pin Assignment
1
2
3
E
C
B
B
C
E
Packing
Bulk
Tape Reel
Ordering Number
Package
Lead Free
Halogen Free
2SB776L-x-T60-K
2SB776G-x-T60-K
TO-126
2SB776L-x-TN3-R
2SB776G-x-TN3-R
TO-252
Note: Pin Assignment: E: Emitter
C: Collector
B: Base
MARKING
TO-126
TO-252
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2SB776
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
SYMBOL
V
CBO
V
CEO
V
EBO
PNP PLANAR TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
( T
A
=25C, unless otherwise specified)
RATINGS
UNIT
-50
V
-50
V
-5
V
DC
-3
A
Collector Current
I
C
PULSE
-7
A
Base Current
I
B
-0.6
A
TO-126
10
W
Collector Dissipation (T
C
=25C)
P
C
TO-252
25
W
Junction Temperature
T
J
+150
C
Storage Temperature
T
STG
-55 ~ +150
C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(Ta=25C, unless otherwise specified)
TEST CONDITIONS
V
CB
=-50V, I
E
=0
V
EB
=-3V, Ic=0
V
CE
=-2V, Ic=-20mA
V
CE
=-2V, Ic=-1A
Ic=-2A, I
B
=-0.2A
Ic=-2A, I
B
=-0.2A
V
CE
=-5V, Ic=-0.1A
V
CB
=-10V, I
E
=0, f=1MHz
MIN
TYP
MAX UNIT
-1000 nA
-1000 nA
400
-0.5
-2.0
PARAMETER
Collector Cut-Off Current
Emitter Cut-Off Current
SYMBOL
I
CBO
I
EBO
h
FE1
DC Current Gain (Note)
h
FE2
Collector-Emitter Saturation Voltage
V
CE(SAT)
Base-Emitter Saturation Voltage
V
BE(SAT)
Current Gain Bandwidth Product
f
T
Output Capacitance
Cob
Note: Pulse test: PW<300s, Duty Cycle<2%
100
100
200
150
-0.3
-1.0
80
45
V
V
MHz
pF
CLASSIFICATION OF h
FE2
RANK
RANGE
Q
100-200
P
160-320
E
200-400
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TYPICAL CHARACTERISTICS
Static Characteristics
150
PNP PLANAR TRANSISTOR
Derating Curve of Safe
Operating Areas
Collector Current, -Ic (A)
1.6
Derating, - Ic (%)
-I
B
=9mA
-I
B
=8MA
-I
B
=7mA
-I
B
=6mA
-I
B
=5mA
1.2
100
S/
bl
0.8
im
ite
d
Di
ss
-I
B
=4mA
-I
B
=3mA
0.4
ip
io
at
50
n
lim
-I
B
=2mA
-I
B
=1mA
0
0
4
8
12
16
20
-50
0
50
ite
d
0
100
150
200
-Collector-Emitter Voltage (V)
Case Temperature, Tc (°C)
1
0.
S
m
Current Gain-
Bandwidth Product, f
T
(MHz)
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Collector Current, -Ic(A)
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TYPICAL CHARACTERISTICS(Cont.)
PNP PLANAR TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
Output Capacitance(pF)
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