UNISONIC TECHNOLOGIES CO., LTD
MCR100
SENSITIVE GATE SILICON
CONTROLLED RECTIFIERS
REVERSE BLOCKING
THYRISTORS
DESCRIPTION
PNPN devices designed for high volume, line-powered
consumer applications such as relay and lamp drivers, small motor
controls, gate drivers for larger thyristors, and sensing and
detection circuits.
3
2
1
SCR
1
SOT-223
SOT-23
1
1
FEATURES
SOT-89
TO-92
* Sensitive gate allows triggering by micro controllers and other
logic circuits
* Blocking voltage to 600V
* On-state current rating of 0.8A RMS at 80C
* High surge current capability – 10A
* Minimum and maximum values of I
GT
, V
GT
and I
H
specified for
ease of design
* Immunity to dV/dt – 20V/μsec minimum at 110C
* Glass-passivated surface for reliability and uniformity
ORDERING INFORMATION
Package
SOT-223
SOT-89
SOT-23
TO-92
TO-92
SOT-223
SOT-89
SOT-23
TO-92
TO-92
SOT-223
SOT-89
SOT-23
TO-92
TO-92
1
K
G
G
K
K
K
G
G
K
K
K
G
G
K
K
Pin assignment
2
A
A
K
G
G
A
A
K
G
G
A
A
K
G
G
3
G
K
A
A
A
G
K
A
A
A
G
K
A
A
A
Packing
Tape Reel
Tape Reel
Tape Reel
Tape Box
Bulk
Tape Reel
Tape Reel
Tape Reel
Tape Box
Bulk
Tape Reel
Tape Reel
Tape Reel
Tape Box
Bulk
Ordering Number
Lead Free
Halogen Free
MCR100L-4-x-AA3-R
MCR100G-4-x-AA3-R
MCR100L-4-x-AB3-R
MCR100G-4-x-AB3-R
MCR100L-4-x-AE3-R
MCR100G-4-x-AE3-R
MCR100L-4-x-T92-B
MCR100G-4-x-T92-B
MCR100L-4-x-T92-K
MCR100G-4-x-T92-K
MCR100L-6-x-AA3-R
MCR100G-6-x-AA3-R
MCR100L-6-x-AB3-R
MCR100G-6-x-AB3-R
MCR100L-6-x-AE3-R
MCR100G-6-x-AE3-R
MCR100L-6-x-T92-B
MCR100G-6-x-T92-B
MCR100L-6-x-T92-K
MCR100G-6-x-T92-K
MCR100L-8-x-AA3-R
MCR100G-8-x-AA3-R
MCR100L-8-x-AB3-R
MCR100G-8-x-AB3-R
MCR100L-8-x-AE3-R
MCR100G-8-x-AE3-R
MCR100L-8-x-T92-B
MCR100G-8-x-T92-B
MCR100L-8-x-T92-K
MCR100G-8-x-T92-K
Note: Pin assignment: G: Gate
K: Cathode A: Anode
www.unisonic.com.tw
Copyright © 2018 Unisonic Technologies Co., Ltd
1 of 6
QW-R301-016.H
MCR100
ABSOLUTE MAXIMUM RATINGS
SCR
PARAMETER
SYMBOL
RATINGS
UNIT
200
V
Peak Repetitive Off-State Voltage(Note 1) MCR100-4
(T
J
=-40 ~ 110°С, Sine Wave, 50 ~ 60Hz; MCR100-6
V
DRM
,V
RRM
400
V
Gate Open)
600
V
MCR100-8
On-Sate RMS Current (Tc=80°С) 180°С Condition Angles
I
T(RMS)
0.8
A
Peak Non-Repetitive Surge Current
I
TSM
10
A
(1/2 cycle, Sine Wave, 60Hz, T
J
=25°С)
Circuit Fusing Considerations (t=8.3 ms)
I
2
t
0.415
A
2
s
Forward Peak Gate Power (T
A
=25°С, Pulse Width
1.0µs)
P
GM
0.1
W
Forward Average Gate Power (T
A
=25°С, t=8.3ms)
P
G(AV)
0.01
W
Peak Gate Current – Forward (T
A
=25°С, Pulse Width1.0μs)
I
GM
1
A
Peak Gate Voltage – Reverse (T
A
=25°С, Pulse Width1.0μs)
V
GRM
5
V
Operating Junction Temperature Range
T
J
-40 ~ +110
°С
(Rated V
RRM
and V
DRM
)
Storage Temperature Range
T
STG
-40 ~ +150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
SOT-223
SOT-23/SOT-89
TO-92
θ
JA
MAX
180
400
200
UNIT
°С/W
°С/W
°С/W
Junction to Ambient
ELECTRICAL CHARACTERISTICS
(T
J
=25°С, unless otherwise stated)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Peak Forward or Reverse Blocking T
C
=25°С
V
D
=Rated V
DRM
and V
RRM
;
10
μA
I
DRM
, I
RRM
Current
R
GK
=1kΩ
T
C
=110°С
100
μA
ON CHARACTERISTICS
Peak Forward On-State Voltage (Note 2)
V
TM
I
TM
=1A Peak @ T
A
=25°С
1.7
V
Gate Trigger Current (Continuous DC) (Note3)
I
GT
V
AK
=7Vdc, R
L
=100Ω, T
C
=25°С
40
200
μA
V
AK
=7Vdc, initiating
T
C
=25°С
0.5
5
mA
I
H
Holding Current
current=20mA
10
mA
T
C
=-40°С
T
C
=25°С
0.6
10
mA
I
L
Latch Current
V
AK
=7V, Ig=200A
T
C
=-40°С
15
mA
Gate Trigger Voltage
T
C
=25°С
0.62 0.8
V
V
GT
V
AK
=7Vdc, R
L
=100Ω
(continuous dc)
T
C
=-40°С
1.2
V
DYNAMIC CHARACTERISTICS
V
D
=Rated V
DRM
, Exponential
Critical Rate of Rise of Off-State Voltage
d
V
/dt Waveform, R
GK
=1000Ω,
20
35
V/μs
T
J
=110°С
I
PK
=20A; Pw=10sec;
50 A/μs
Critical Rate of Rise of On-State Current
di/dt
diG/dt=1A/μsec, Igt=20mA
Notes: 1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings apply for zero or negative gate
voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the
anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of
the devices are exceeded.
2. Indicates Pulse Test Width1.0ms, duty cycle
1%.
3. Does not include RGK in measurement.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R301-016.H
MCR100
VOLTAGE CURRENT CHARACTERISTIC OF SCR
SYMBOL
V
DRM
I
DRM
V
RRM
I
RRM
V
TM
I
H
+Current
PARAMETER
Peak Repetitive Off Stat Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak On State Voltage
Holding Current
SCR
Anode+
V
TM
On State
I
RRM
at V
RRM
I
H
+Voltage
Reverse Blocking
Region (off state)
Reverse Avalanche
Region Anode-
I
DRM
at V
DRM
Forward Blocking
Region (off state)
CLASSIFICATION OF I
GT
RANK
RANGE
B
48~105μA
C
95~200μA
AA
8~16μA
AB
14~21μA
AC
19~25μA
AD
23~52μA
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 6
QW-R301-016.H
MCR100
TYPICAL CHARACTERISTICS
Typical Gate Trigger Current vs.
Junction Temperature
100
90
Gate Trigger Current (µA)
Gate Trigger Voltage (V)
80
70
60
50
40
30
20
10
-40 -25 -10 5 20 35 50 65 80 95 110
Junction Temperature, T
J
(℃)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
-40 -25 -10 5 20 35 50 65 80 95 110
Junction Temperature, T
J
(℃)
Typical Gate Trigger Voltage vs.
Junction Temperature
SCR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Instantaneous On-State Current, I
T
(A)
Maximum Allowable Case
Temperature (℃)
5 of 6
QW-R301-016.H
FPGA/CPLD
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