UNISONIC TECHNOLOGIES CO., LTD
2SA684
PNP SILICON TRANSISTOR
DESCRIPTION
The
UTC 2SA684
is power amplifier and driver.
PNP SILICON TRANSISTOR
FEATURES
* Automatic insertion by radial taping possible.
* Complementary pair with 2SC1384.
ORDERING INFORMATION
Package
SOT-89
TO-92NL
TO-92NL
Pin Assignment
1
2
3
B
C
E
E
C
B
E
C
B
Packing
Tape Reel
Tape Box
Bulk
Ordering Number
Lead Free
Halogen Free
-
2SA684G-x-AB3-R
2SA684L-x-T9N-B
2SA684G-x-T9N-B
2SA684L-x-T9N-K
2SA684G-x-T9N-K
Note: Pin Assignment: B: Base C: Collector
E: Emitter
MARKING
SOT-89
TO-92NL
L: Lead Free
G: Halogen Free
Data Code
UTC
2SA684
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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QW-R211-006.D
2SA684
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Collector Current
Collector Current (DC)
SYMBOL
V
CBO
V
CEO
V
EBO
I
CP
I
C
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C, unless otherwise noted)
UNIT
V
V
V
A
A
mW
mW
°C
°C
RATINGS
-60
-50
-5
-1.5
-1
SOT-89
500
Collector Dissipation
P
C
TO-92NL
1000
Junction Temperature
T
J
+150
Storage Temperature
T
STG
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
A
=25°C, unless otherwise noted)
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
h
FE1
h
FE2
V
CE(SAT)
V
BE(SAT)
f
T
C
ob
TEST CONDITIONS
I
C
=-10A, I
E
=0
I
C
=-2mA, I
B
=0
I
E
=-10μA, I
C
=0
V
CB
=-20V, I
E
=0
V
CE
=-10V, I
C
=-500mA
V
CE
=-5V, I
C
=-1A
I
C
=-0.5A, I
B
=-50mA
I
C
=-0.5A, I
B
=-50mA
V
CE
=-10V, I
B
=50mA, f=200MHz
V
CB
=-10V, I
E
=0, f=1MHz
MIN
-60
-50
-5
85
50
-0.2
-0.85
200
20
TYP
MAX
UNIT
V
V
V
μA
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
-0.1
340
-0.4
-1.2
30
V
V
MHz
pF
CLASSIFICATION OF h
FE
RANK
RANGE
Q
85-170
R
120-240
S
170-340
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R211-006.D
2SA684
TYPICAL CHARACTERISTICS
PNP SILICON TRANSISTOR
Base to Emitter Saturation Voltage,
V
BE(SAT)
(V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Forward Current Transfer Ratio, h
FE
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2SA684
TYPICAL CHARACTERISTICS(Cont.)
PNP SILICON TRANSISTOR
-120
-100
-80
-60
-40
-20
Collector to Emitter Voltage vs.
Base to Emitter Resistance
I
C
=-10mA
T
A
=25°C
10
4
Collector to Emitter Current vs.
Ambient Temperature
V
CE
=-10V
10
3
10
2
10
0
1
3
10 30
0.1 0.3
100
Base to Emitter Resistance, R
BE
(KΩ)
1
0 20 40 60 80 100 120 140 160
Ambient Temperature, T
A
(°C)
-10
Area Of Safe Operation (ASO)
Single Pulse
T
A
=25°C
t=10ms
t=1s
-3 I
CP
-1
-0.3
-0.1
-0.03
-0.01
-0.003
-0.001
-0.1 -0.3 -1 -3 -10 -30 -100
Collector To Emitter Voltage, V
CE
(V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 5
QW-R211-006.D
2SA684
PNP SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 5
QW-R211-006.D
嵌入式系统
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