UNISONIC TECHNOLOGIES CO., LTD
MMBT1015
LOW FREQUENCY PNP
AMPLIFIER TRANSISTOR
FEATURES
PNP SILICON TRANSISTOR
* Collector-Emitter Voltage: BV
CEO
= -50V
* Collector current up to 150mA
* High h
FE
linearity
* Complement to MMBT1815
ORDERING INFORMATION
Ordering Number
MMBT1015G-x-AC3-R
MMBT1015G-x-AE3-R
MMBT1015G-x-AL3-R
MMBT1015G-x-AN3-R
MMBT1015G-x-AQ3-R
Pin assignment: E: Emitter
B: Base
Package
SOT-113
SOT-23
SOT-323
SOT-523
SOT-723
C: Collector
Pin Assignment
1
2
3
E
B
C
E
B
C
E
B
C
E
B
C
E
B
C
Packing
Tape Reel
Tape Reel
Tape Reel
Tape Reel
Tape Reel
Note:
MARKING
PACKAGE
Y
SOT-23
A4YG
MARKING
GR
A4GG
BL
A4BG
SOT-113 / SOT-323 / SOT-523
A4G
SOT-723
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
SOT-23
Collector Dissipation SOT-523/SOT-113/SOT-323
SOT-723
Collector Current
Base Current
SYMBOL
V
CBO
V
CEO
V
EBO
P
C
I
C
I
B
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
( T
A
=25°C, unless otherwise specified )
RATINGS
-50
-50
-5
250
200
190
-150
-50
UNIT
V
V
V
mW
mA
mA
Junction Temperature
T
J
125
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
A
=25°C, unless otherwise specified)
SYMBOL
BV
CBO
BV
CEO
BV
EBO
V
CE(SAT)
V
BE(SAT)
I
CBO
I
EBO
h
FE1
h
FE2
f
T
C
OB
NF
TEST CONDITIONS
I
C
= -100μA, I
E
= 0
I
C
= -10mA, I
B
= 0
I
E
= -10μA, I
C
= 0
I
C
= -100mA, I
B
= -10mA
I
C
= -100mA, I
B
= -10mA
V
CB
= -50V, I
E
= 0
V
EB
= -5V, I
C
= 0
V
CE
= -6V, I
C
= -2mA
V
CE
= -6V, I
C
= -150mA
V
CE
= -10V, I
C
= -1mA
V
CB
= -10V, I
E
= 0, f = 1MHz
I
C
= -0.1mA, V
CE
= -6V
R
G
= 1kΩ, f = 100Hz
MIN
-50
-50
-5
TYP
MAX UNIT
V
V
V
-0.3
V
-1.1
V
-100
nA
-100
nA
700
MHz
pF
dB
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Transition Frequency
Output Capacitance
Noise Figure
-0.1
120
25
80
4.0
0.5
7.0
6
CLASSIFICATION OF h
FE1
RANK
RANGE
Y
120-240
GR
200-400
BL
350-700
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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TYPICAL CHARACTERISTICS
Static Characteristics
-300
IB=-15mA
IB=-10mA
IB=-5mA
PNP SILICON TRANSISTOR
DC Current Gain
3
10
-240
2
10
-180
IB=-1mA
V
CE
=-6V
-120
IB=-0.5mA
IB=-0.3mA
1
10
-60
IB=-0.2mA
IB=-0.1mA
0
-1
-2
-3
-4
-5
-6
0
10
-1
-10
0
-10
1
-10
2
-10
3
-10
Collector-Emitter Voltage ( V)
Collector Current, Ic (mA)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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PNP SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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