UNISONIC TECHNOLOGIES CO., LTD
6N60K-MT
6.2A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
6N60K-MT
is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and have a high
rugged avalanche characteristics. This power MOSFET is usually
used at high speed switching applications in switching power
supplies and adaptors.
FEATURES
* R
DS(ON)
< 1.4Ω @ V
GS
= 10V, I
D
= 3.1A
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
SYMBOL
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QW-R205-021.E
6N60K-MT
ORDERING INFORMATION
Package
TO-220
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-251
TO-251S
TO-251S2
TO-251S4
TO-252
TO-252D
Ordering Number
Lead Free
Halogen Free
6N60KL-TA3-T
6N60KG-TA3-T
6N60KL-TF3-T
6N60KG-TF3-T
6N60KL-TF1-T
6N60KG-TF1-T
6N60KL-TF2-T
6N60KG-TF2-T
6N60KL-TF3-T
6N60KG-TF3-T
6N60KL-TM3-T
6N60KG-TM3-T
6N60KL-TMS-T
6N60KG-TMS-T
6N60KL-TMS2-T
6N60KG-TMS2-T
6N60KL-TMS4-T
6N60KG-TMS4-T
6N60KL-TN3-R
6N60KG-TN3-R
6N60KL-TND-R
6N60KG-TND-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source
Power MOSFET
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
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Tape Reel
Tape Reel
MARKING
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QW-R205-021.E
6N60K-MT
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
600
V
Gate-Source Voltage
V
GSS
±30
V
Avalanche Current (Note 2)
I
AR
6.2
A
Continuous Drain Current
I
D
6.2
A
Pulsed Drain Current (Note 2)
I
DM
24.8
A
Single Pulsed (Note 3)
E
AS
330
mJ
Avalanche Energy
13
mJ
Repetitive (Note 2)
E
AR
Peak Diode Recovery dv/dt (Note 4)
dv/dt
3.0
V/ns
TO-220
125
W
TO-220F/TO-220F1
40
W
TO-220F3
Power Dissipation
P
D
TO-220F2
42
W
TO-251/TO-251S
TO-251S2/TO-251S4
55
W
TO-252/TO-252D
Junction Temperature
T
J
+150
°C
Operating Temperature
T
OPR
-55 ~ +150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by T
J
3. L = 18.33mH, I
AS
= 6A, V
DD
= 90V, R
G
= 25
Ω,
Starting T
J
= 25°C
4. I
SD
≤
6.2A, di/dt
≤200A/μs,
V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
SYMBOL
RATINGS
62.5
θ
JA
110
1.0
3.2
θ
JC
2.97
2.27
°C/W
°C/W
°C/W
°C/W
°C/W
UNIT
°C/W
PARAMETER
TO-220/TO-220F
TO-220F1/TO-220F2
TO-220F3
Junction to Ambient
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
TO-220
TO-220F/TO-220F1
TO-220F3
Junction to Case
TO-220F2
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
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QW-R205-021.E
6N60K-MT
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified)
SYMBOL
BV
DSS
TEST CONDITIONS
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Power MOSFET
MIN TYP MAX UNIT
V
GS
=0V, I
D
=250μA
600
V
V
DS
=600V, V
GS
=0V
10
μA
Drain-Source Leakage Current
I
DSS
V
DS
=480V, V
GS
=0V, T
J
=125°C
10
μA
Forward
V
G=
30V, V
DS
=0V
100 nA
Gate- Source Leakage Current
I
GSS
Reverse
V
GS
=-30V, V
DS
=0V
-100 nA
Breakdown Voltage Temperature Coefficient
△BV
DSS
/△T
J
I
D
=250μA, Referenced to 25°C
0.53
V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250μA
2.0
4.0
V
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=3.1A
1.4
Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
540
pF
V
DS
=25V, V
GS
=0V, f=1.0 MHz
Output Capacitance
C
OSS
97
pF
Reverse Transfer Capacitance
C
RSS
11
pF
SWITCHING CHARACTERISTICS
Total Gate Charge
Q
G
23
nC
V
DS
=50V, I
D
=1.3A, V
GS
=10V
Gate-Source Charge
Q
GS
6.7
nC
(Note 1, 2)
5.7
nC
Gate-Drain Charge
Q
GD
Turn-On Delay Time
t
D(ON)
60
ns
V
DD
=30V, I
D
=0.5A, R
G
=25Ω
Turn-On Rise Time
t
R
66
ns
(Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
120
ns
Turn-Off Fall Time
t
F
64
ns
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain-Source Diode
I
S
6.2
A
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
24.8 A
Forward Current
Drain-Source Diode Forward Voltage
V
SD
I
S
=6.2A, V
GS
=0V
1.4
V
Body Diode Reverse Recovery Time
t
RR
I
S
=6.2A, V
GS
=0V,
400
ns
dI
F
/dt=100A/µs (Note 1)
Body Diode Reverse Recovery Charge
Q
RR
2.8
nC
Notes: 1. Pulse Test: Pulse width
≤
300μs, Duty cycle
≤
2%.
2. Essentially independent of operating temperature.
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QW-R205-021.E
6N60K-MT
TEST CIRCUITS AND WAVEFORMS
+
V
DS
-
+
-
L
Power MOSFET
D.U.T.
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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www.unisonic.com.tw
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QW-R205-021.E
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