UNISONIC TECHNOLOGIES CO., LTD
7NM70
7.0A, 700V N-CHANNEL
SUPER-JUNCTION MOSFET
DESCRIPTION
Power MOSFET
The
UTC 7NM70
is a Super Junction MOSFET Structure and is
designed to have better characteristics, such as fast switching time,
low gate charge, low on-state resistance and a high rugged
avalanche characteristics. This power MOSFET is usually used at
DC-DC, AC-DC converters for power applications.
FEATURES
* R
DS(ON)
< 1.0Ω @ V
GS
= 10V, I
D
= 3.5A
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
RDERING INFORMATION
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
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Tape Reel
Ordering Number
Package
Lead Free
Halogen Free
7NM70L-TA3-T
7NM70G-TA3-T
TO-220
7NM70L-TF3-T
7NM70G-TF3-T
TO-220F
7NM70L-TF1-T
7NM70G-TF1-T
TO-220F1
7NM70L-TF2-T
7NM70G-TF2-T
TO-220F2
7NM70L-TF3T-T
7NM70G-TF3T-T
TO-220F3
7NM70L-TM3-T
7NM70G-TM3-T
TO-251
7NM70L-TMS2-T
7NM70G-TMS2-T
TO-251S2
7NM70L-TMN2-T
7NM70G-TMN2-T
TO-251NS2
7NM70L-TN3-R
7NM70G-TN3-R
TO-252
Note: Pin Assignment: G: Gate D: Drain
S: Source
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Copyright © 2017 Unisonic Technologies Co., Ltd
1 of 8
QW-R205-047.H
7NM70
MARKING
Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 8
QW-R205-047.H
7NM70
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
700
V
Gate-Source Voltage
V
GSS
±30
V
Continuous Drain Current
I
D
7.0
A
Drain Current Pulsed (Note 2)
I
DM
28
A
Avalanche Current (Note 2)
I
AR
1.9
A
Avalanche Energy, Single Pulsed (Note 3)
E
AS
103
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.2
V/ns
TO-220
142
W
TO-220F/TO-220F1
48
W
TO-220F3
Power Dissipation
P
D
TO-220F2
50
W
TO-251/TO-251S2
60
W
TO-251NS2/TO-252
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L=20mH, I
AS
=3.2A, V
DD
=50V, R
G
=25
Ω,
Starting T
J
=25°C.
4. I
SD
≤
7.0A, di/dt
≤200A/μs,
V
DD
≤
BV
DSS
, Starting T
J
=25°C.
THERMAL DATA
SYMBOL
RATING
62.5
θ
JA
110
0.88
2.6
θ
JC
2.5
2.08
°C/W
°C/W
UNIT
PARAMETER
TO-220/TO-220F
TO-220F1/TO-220F2
TO-220F3
Junction to Ambient
TO-251/TO-251S2
TO-251NS2/TO-252
TO-220
TO-220F/TO-220F1
TO-220F3
Junction to Case
TO-220F2
TO-251/TO-251S2
TO-251NS2/TO-252
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 8
QW-R205-047.H
7NM70
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified)
SYMBOL
BV
DSS
I
DSS
Forward
Reverse
I
GSS
TEST CONDITIONS
V
GS
= 0V, I
D
= 250μA
V
DS
= 700V, V
GS
= 0V
V
GS
= 30V, V
DS
= 0V
V
GS
= -30V, V
DS
= 0V
Power MOSFET
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
MIN
700
TYP MAX UNIT
V
μA
nA
nA
V
Ω
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
7.0
28
1.4
317
3.03
A
A
V
ns
μC
10
100
-100
2.5
4.5
1.0
400
223
23
19
5
5.2
50
70
140
65
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 250μA
Drain-Source ON-State Resistance
R
DS(ON)
V
GS
= 10V, I
D
= 3.5A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
V
GS
=0V, V
DS
=25V, f=1.0MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Total Gate Charge (Note 1)
Q
G
V
DS
=50V, V
GS
=10V, I
D
=1.3A,
Gate to Source Charge
Q
GS
I
G
=100μA (Note 1, 2)
Gate to Drain Charge
Q
DD
Turn-ON Delay Time (Note 1)
t
D(ON)
V
DD
=30V, V
GS
=10V,
Rise Time
t
R
I
D
=0.5A, R
G
=25Ω (Note 1, 2)
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
Maximum Body-Diode Pulsed Current
I
SM
Drain-Source Diode Forward Voltage (Note 1)
V
SD
I
S
=7.0A, V
GS
=0V
I
S
=7.0A, V
GS
=0V,
Body Diode Reverse Recovery Time (Note 1)
t
rr
dI
F
/dt = 100A/μs
Body Diode Reverse Recovery Charge
Q
rr
Notes: 1. Pulse Test: Pulse width
≤
300μs, Duty cycle
≤
2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 8
QW-R205-047.H
7NM70
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R205-047.H
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