UNISONIC TECHNOLOGIES CO., LTD
UT134E
TRIAC
DESCRIPTION
TRIAC
Glass passivated, sensitive gate triac in a plastic envelope,
intended for use in general purpose bidirectional switching and
phase control aplications, where high sensitivity is required in all
four quadrants.
SYMBOL
ORDERING INFORMATION
Order Number
Normal
UT134E-x-T60-K
Lead Free Plating
UT134E-x-T60-K
Package
TO-126
Pin Assignment
1
2
3
MT1
MT2 GATE
Packing
Bulk
MARKING
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QW-R401-007.D
UT134E
ABSOLUTE MAXIMUM RATING
PARAMETER
Repetitive peak off-state voltages
RMS on-state current
full sine wave; T
mb
≤107°C
Non-repetitive peak on-state current
(Full sine wave; T
J
= 25°C prior to surge)
I
2
t for fusing
UT134E-5
UT134E-6
UT134E-8
SYMBOL
V
DRM
I
T(RMS)
t = 20ms
t = 16.7 ms
I
TSM
RATINGS
500
600
800
4
TRIAC
UNIT
V
A
25
A
27
t = 10 ms
I
2
t
3.1
A
2
s
50
A/μS
T2+ G+
Repetitive rate of rise of on-state current
T2+ G-
50
A/μS
after triggering
dI
T
/dt
T2- G-
50
A/μS
I
TM
= 6 A; I
G
= 0.2A;d
IG
/dt = 0.2A/μs
T2- G+
10
A/μS
Peak gate voltage
V
GM
5
V
Peak gate current
I
GM
2
A
Peak gate power
P
GM
5
W
Average gate power (over any 20 ms period)
P
G(AV)
0.5
W
Junction Temperature
T
J
125
°C
Operating Temperature
T
OPR
-20 ~ +85
°C
Storage Temperature
T
STG
-40 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. The device is guaranteed to meet performance specification within 0°C~70°C operating temperature range
and assured by design from –20°C ~ 85°C.
3. Although not recommended, off-state voltages up to 800V may be applied without damage, but the traic
may switch to the on-state. The rate of rise of current should not exceed 3A/s.
THERMAL RESISTANCES
SYMBOL
θ
JA
θ
JC
MIN
TYP
100
MAX
3.0
3.7
UNIT
°C/W
°C/W
°C/W
PARAMETER
Thermal resistance Junction to Ambient (In free air)
Full cycle
Thermal resistance Junction to mounting
base
Half cycle
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise stated)
PARAMETER
SYMBOL
I
GT
TEST CONDITIONS
T2+G+
T2+G-
V
D
= 12 V; I
T
= 0.1 A
T2-G-
T2-G+
T2+G+
T2+G-
V
D
= 12 V; I
GT
= 0.1 A
T2-G-
T2-G+
V
D
= 12 V; I
GT
= 0.1 A
I
T
= 5 A
V
D
= 12 V; I
T
= 0.1 A
V
D
= 400V ; I
T
= 0.1 A; T
J
=125°C
V
D
= V
DRM(max)
; T
J
= 125°C
MIN
TYP
2.5
4.0
5.0
11
3.0
10
2.5
4.0
2.2
1.4
0.7
0.4
0.1
MAX UNIT
10
mA
10
mA
10
mA
25
mA
15
mA
20
mA
15
mA
20
mA
15
mA
1.7
V
1.5
V
V
0.5
mA
Gate trigger current
Latching current
Holding current
On-state voltage
Gate trigger voltage
Off-state leakage current
I
L
I
H
V
T
V
GT
I
D
0.25
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QW-R401-007.D
UT134E
TRIAC
DYNAMIC CHARACTERISTICS
(T
J
=25°C, unless otherwise stated)
PARAMETER
SYMBOL
dV
D
/dt
t
GT
CONDITIONS
V
DM
= 67% V
DRM(max)
; T
J
=125°C;
exponential waveform; gate open
circuit
I
TM
= 6A; V
D
=V
DRM(max)
; I
G
=0.1A;
d
IG
/dt=5A/μs
MIN
TYP
50
2
MAX UNIT
V/μs
μs
Critical rate of rise of Off-state voltage
Gate controlled turn-on time
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UT134E
TYPICAL CHARACTERISTICS
TRIAC
Fig 3. Maximum Permissible Non-repetitive Peak
On-state Current, I
TSM
, Versus Number Of Cycles,
For Sinusoidal Currents, f=50Hz.
ITSM/A
30
I
TSM
I
T
25
20
15
10
5
0
0
10
100
Number of cycles at 50Hz
1000
time
T
T
J
initial=25°C max
Fig 4. Maximum Permissible Rms Current, l
T(RMS)
Versus Mounting Base Temperature, T
mb
IT(RMS)/A
5
107°C
4
3
2
1
0
-50
0
50
Tmb/C
Fig 6. Normalised Gate Trigger Voltage,
V
GT
(T
J
)/V
GT
(25°C), Versus Junction
Temperature, T
J
V
GT
(T
J
)
V
GT
(25°C)
1.6
1.4
1.2
1
0.8
0.6
100
150
Fig 5. Maximum Permissible Repetitive Rms On-State
Current , l
T(RMS)
,Versus Surge Duration, For
Sinusoidal Currents, f=50HZ, Tmb 107°C
12
10
8
6
4
2
0
0.01
0.1
1
surge duration /S
10
IT(RMS)/A
0.4
-50
0
50
T
J
/°C
100
150
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QW-R401-007.D
UT134E
TYPICAL CHARACTERISTICS(Cont.)
TRIAC
Fig 9. Normalised Holding Current, I
H
(T
J
)/I
H
(25°C),
versus junction temperature, T
J
I
H
(T
J
)
I (25°C)
3
H
2.5
2
1.5
1
0.5
0
-50
0
50
T
J
/°C
100
150
Fig 10. Typical And Maximum On-state
Characteristic
12
IT/A
T
J
=125°C
typ
max
10 T
J
=25°C
8 Vo
UT
=1.27V
R
S
=0.091Ohms
6
4
2
0
0
0.5
1
1.5
VT/V
2
2.5
3
Fig 11. Transient Thermal Impedance
Zthj-mb,Versus Pulse Width tp
10
Zth j-mb(K/W)
unidirectional
bidirectional
Fig 12. Typical Critical Rate Of Rise Of Off-satate
Voltage, dV
D
/dt Versus Junction
Temperature, T
J
dVD/dt(V/us)
1000
1
0.1
P
D
tp
t
10
0.01
10us 0.1ms 1ms 10ms 0.1s
tp/s
1s
10s
1
0
50
T
J
/°C
100
150
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QW-R401-007.D
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