UNISONIC TECHNOLOGIES CO., LTD
2N65
2A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
2N65
is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and have a high
rugged avalanche characteristics. This power MOSFET is usually
used at high speed switching applications in power supplies,
PWM motor controls, high efficient DC to DC converters and
bridge circuits.
FEATURES
* R
DS(ON)
< 5.0Ω @ V
GS
= 10V
* Ultra Low gate charge (typical 45nC)
* Low reverse transfer capacitance (C
RSS
= typical 9 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
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QW-R502-370.L
2N65
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
2N65L-TA3-T
2N65G-TA3-T
2N65L-TF1-T
2N65G-TF1-T
2N65L-TF2-T
2N65G-TF2-T
2N65L-TF3-T
2N65G-TF3-T
2N65L-TF3T-T
2N65G-TF3T-T
2N65L-TM3-T
2N65G-TM3-T
2N65L-TMA-T
2N65G-TMA-T
2N65L-TMS-T
2N65G-TMS-T
2N65L-TN3-R
2N65G-TN3-R
2N65L-TN3-T
2N65G-TN3-T
2N65L-T2Q-T
2N65G-T2Q-T
2N65L-T60-K
2N65G-T60-K
2N65L-T6C-K
2N65G-T6C-K
Pin Assignment: G: Gate
D: Drain
S: Source
Package
TO-220
TO-220F1
TO-220F2
TO-220F
TO-220F3
TO-251
TO-251L
TO-251S
TO-252
TO-252
TO-262
TO-126
TO-126C
Power MOSFET
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tape Reel
Tube
Tube
Bulk
Bulk
Note:
MARKING INFORMATION
PACKAGE
TO-220
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-126
TO-126C
TO-251
TO-251L
TO-251S
TO-252
TO-262
MARKING
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2 of 7
QW-R502-370.L
2N65
ABSOLUTE MAXIMUM RATINGS
(
T
C
= 25°С, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
650
V
Gate-Source Voltage
V
GSS
±30
V
Avalanche Current (Note 2)
I
AR
2.0
A
2.0
A
Continuous
I
D
Drain Current
Pulsed (Note 2)
I
DM
8.0
A
140
mJ
Single Pulsed (Note 3)
E
AS
Avalanche Energy
Repetitive (Note 2)
E
AR
4.5
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220/TO-262
40
W
TO-220F/TO-220F1
21
W
TO-220F3
Power Dissipation
TO-220F2
P
D
23
W
TO-251/TO-251L
28
W
TO-252/TO-251S
TO-126/TO-126C
12.5
W
Junction Temperature
T
J
+150
°С
Operating Temperature
T
OPR
-55 ~ +150
°С
Storage Temperature
T
STG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by T
J
.
3. L=64mH, I
AS
=2.0A, V
DD
=50V, R
G
=25Ω, Starting T
J
= 25°C
4. I
SD
≤2.4A,
di/dt≤200A/μs, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
SYMBOL
RATINGS
62.5
θ
JA
110
132
3.13
5.95
θ
JC
5.43
4.53
10
°С/W
°С/W
°С/W
°С/W
°С/W
°С/W
°С/W
UNIT
°С/W
PARAMETER
TO-220/ TO-262
TO-220F/TO-220F1
TO-220F2/TO-220F3
Junction to Ambient
TO-251/TO-251L
TO-252/TO-251S
TO-126/TO-126C
TO-220/ TO-262
TO-220F/TO-220F1
TO-220F3
Junction to Case
TO-220F2
TO-251/TO-251L
TO-251S/TO-252
TO-126/TO-126C
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3 of 7
QW-R502-370.L
2N65
ELECTRICAL CHARACTERISTICS
(T
J
=25°С, unless otherwise specified)
SYMBOL
BV
DSS
I
DSS
TEST CONDITIONS
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Power MOSFET
MIN TYP MAX UNIT
V
GS
= 0V, I
D
= 250μA
650
V
V
DS
= 650V, V
GS
= 0V
10
μA
100 nA
Forward
V
GS
= 30V, V
DS
= 0V
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
= -30V, V
DS
= 0V
-100 nA
Breakdown Voltage Temperature Coefficient
△
BV
DSS
/
△
T
J
I
D
=250μA, Referenced to 25°C
0.4
V/°С
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 250μA
2.0
4.0
V
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10V, I
D
=1A
3.9 5.0
Ω
DYNAMIC CHARACTERISTICS
320 370 pF
Input Capacitance
C
ISS
V
DS
=25V, V
GS
=0V,
Output Capacitance
C
OSS
40
50
pF
f =1MHz
Reverse Transfer Capacitance
C
RSS
9
12
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D (ON)
35
50
ns
Turn-On Rise Time
t
R
40
60
ns
V
DD
=325V, I
D
=2.4A,
R
G
=25Ω (Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
130 160 ns
Turn-Off Fall Time
t
F
40
60
ns
45
55
nC
Total Gate Charge
Q
G
V
DS
=520V, V
GS
=10V,
Gate-Source Charge
Q
GS
4
nC
I
D
=2.4A (Note 1, 2)
Gate-Drain Charge
Q
GD
8.4
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0 V, I
SD
= 2.0 A
1.4
V
Continuous Drain-Source Current
I
SD
2.0
A
Pulsed Drain-Source Current
I
SM
8.0
A
180
ns
Reverse Recovery Time
t
rr
V
GS
= 0 V, I
SD
= 2.4A,
di/dt = 100 A/μs (Note1)
Reverse Recovery Charge
Q
RR
0.72
μC
Notes: 1. Pulse Test: Pulse width
≤
300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
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4 of 7
QW-R502-370.L
2N65
TEST CIRCUITS AND WAVEFORMS
+
V
DS
-
+
-
L
Power MOSFET
D.U.T.
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
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5 of 7
QW-R502-370.L
stm32/stm8
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