UNISONIC TECHNOLOGIES CO., LTD
12N70K-MT
12A, 700V N-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
12N70K-MT
are N-Channel enhancement mode
power MOSFET which are produced using UTC’s proprietary,
planar stripe, DMOS technology.
These devices are suited for high efficiency switch mode power
supply. To minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode the advanced technology has been
especially tailored.
FEATURES
* R
DS(ON)
≤
0.83Ω @ V
GS
=10V, I
D
=6.0A
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
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QW-R205-028.G
12N70K-MT
ORDERING INFORMATION
Package
TO-220
TO-220F1
TO-220F2
TO-220F3
TO-220F
TO-251
TO-252
TO-263
TO-263
Ordering Number
Lead Free
Halogen Free
12N70KL-TA3-T
12N70KG-TA3-T
12N70KL-TF1-T
12N70KG-TF1-T
12N70KL-TF2-T
12N70KG-TF2-T
12N70KL-TF3T-T
12N70KG-TF3T-T
12N70KL-TF3-T
12N70KG-TF3-T
12N70KL-TM3-T
12N70KG-TM3-T
12N70KL-TN3-R
12N70KG-TN3-R
12N70KL-TQ2-T
12N70KG-TQ2-T
12N70KL-TQ2-R
12N70KG-TQ2-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source
Power MOSFET
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tube
Tube
Tape Reel
Tube
Tape Reel
MARKING
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QW-R205-028.G
12N70K-MT
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
700
V
Gate-Source Voltage
V
GSS
±30
V
Continuous
I
D
12
A
Drain Current
Pulsed (Note 2)
I
DM
24
A
Avalanche Energy
Single Pulsed (Note 3)
E
AS
170
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
2.9
V/ns
TO-220/TO-263
140
W
TO-220F/ TO-220F1
34
W
Power Dissipation
P
D
TO-220F3
TO-220F2
36
W
TO-251/TO-252
50
W
Junction Temperature
T
J
+150
°C
Operating Temperature
T
OPR
-55 ~ +150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L=10mH, I
AS
=5.8A, V
DD
= 50V, R
G
=25Ω, Starting T
J
=25°C
4. I
SD
≤12A,
di/dt
≤200A/μs,
V
DD
≤BV
DSS
, Starting T
J
=25°C
THERMAL DATA
SYMBOL
θ
JA
RATINGS
62.5
110
0.89
θ
JC
3.68
3.47
2.5
UNIT
°С/W
°С/W
°С/W
°С/W
°С/W
°С/W
PARAMETER
TO-220/TO-220F
TO-220F1/TO-220F2
Junction to Ambient
TO-220F3/TO-263
TO-251/TO-252
TO-220/TO-263
TO-220F/ TO-220F1
TO-220F3
Junction to Case
TO-220F2
TO-251/TO-252
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QW-R205-028.G
12N70K-MT
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=0V, I
D
=250μA
700
Drain-Source Leakage Current
I
DSS
V
DS
=700V, V
GS
=0V
Gate-Source Leakage Current
I
GSS
V
GS
=±30V, V
DS
=0V
Breakdown Voltage Temperature Coefficient
△
BV
DSS
/△T
J
I
D
=250μA,Referenced to 25°C
0.7
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250μA
2.0
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=6.0A
0.70
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
2000
V
DS
=25V, V
GS
=0V, f=1MHz
Output Capacitance
C
OSS
160
7
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Total Gate Charge
Q
G
40
V
DS
=560V, V
GS
=10V, I
D
=12A
Gate-Source Charge
Q
GS
10
(Note 1, 2)
7
Gate-Drain Charge
Q
GD
Turn-On Delay Time
t
D(ON)
28
V
DD
=100V, I
D
=12A, R
G
=25Ω
Turn-On Rise Time
t
R
21
(Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
122
Turn-Off Fall Time
t
F
37
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Drain-Source Diode Forward Voltage
V
SD
I
S
=12A, V
GS
=0V
Reverse Recovery Time
t
rr
I
S
=12A, V
GS
=0V
534
di/dt=200A/μs (Note 1)
Reverse Recovery Charge
Q
rr
5.7
Notes: 1. Pulse Test: Pulse width
≤
300µs, Duty cycle
≤
2%.
2. Essentially independent of operating temperature.
MAX UNIT
V
10
μA
±100 nA
V/°C
4.0
0.83
V
Ω
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
12
24
1.4
A
A
V
ns
μC
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QW-R205-028.G
12N70K-MT
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
D.U.T.
+
V
DS
-
+
I
SD
-
L
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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QW-R205-028.G
微控制器 MCU
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