UNISONIC TECHNOLOGIES CO., LTD
2SA1012
HIGH CURRENT SWITCHING
APPLICATION
FEATURES
PNP SILICON TRANSISTOR
*Low Collector Saturation Voltage
V
CE(SAT)
=-0.4V(max.) At I
C
=-3A
*High Speed Switching Time: t
S
=1.0s (Typ.)
*Complementary To 2SC2562
ORDERING INFORMATION
Pin Assignment
1
2
3
B
C
E
B
C
E
B
C
E
B
C
E
Packing
Tube
Tube
Tube
Tape Reel
Ordering Number
Package
Lead Free
Halogen Free
2SA1012L-x-TA3-T
2SA1012G-x-TA3-T
TO-220
2SA1012L-x-TF3-T
2SA1012G-x-TF3-T
TO-220F
2SA1012L-x-TM3-T
2SA1012G-x-TM3-T
TO-251
2SA1012L-x-TN3-R
2SA1012G-x-TN3-R
TO-252
Note: Pin Assignment: B: Base C: Collector
E: Emitter
MARKING
www.unisonic.com.tw
Copyright © 2018 Unisonic Technologies Co., Ltd
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2SA1012
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Base Current
Peak Collector Current
DC
Pulse
DC
Pulse
TO-220
TO-220F
TO-251
TO-252
SYMBOL
V
CBO
V
CEO
V
EBO
I
B
I
BP
I
C
I
CP
P
D
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(T
A
=25C, unless otherwise specified)
RATINGS
-60
-50
-5
-1
-2
-5
-8
25
23
15
UNIT
V
V
V
A
A
A
A
W
W
W
Power Dissipation (T
C
=25C)
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C, unless otherwise specified)
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE (SAT)
V
BE (SAT)
f
T
Cob
t
ON
t
S
t
F
TEST CONDITIONS
I
C
=-100μA, I
E
=0
I
C
=-10mA, I
B
=0
I
E
=-100μA, I
C
=0
V
CB
=-50V, I
E
=0
V
EB
=-5V, I
C
=0
V
CE
=-1V, I
C
=-1A
V
CE
=-1V, I
C
=-3A
I
C
=-3A, I
B
=-0.15A
I
C
=-3A, I
B
=-0.15A
V
CE
=-4V, I
C
=-1A
V
CB
=-10V, I
E
=0, f=1MHz
MIN
-60
-50
-5
TYP
MAX
UNIT
V
V
V
μA
μA
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition frequency
Collector output capacitance
Turn-on time
Switching time Storage time
Fall time
70
30
-0.2
-0.9
60
170
0.1
1.0
0.1
-1.0
-1.0
360
-0.4
-1.2
V
V
MHz
pF
μs
μs
μs
CLASSIFICATION of h
FE1
RANK
RANGE
O
70 ~ 140
Y
120 ~ 240
R
180 ~ 360
R1
>255
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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2SA1012
■
TYPICAL CHARACTERISTICS
PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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2SA1012
TYPICAL CHARACTERICS (Cont.)
PNP SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all UTC products described or contained herein.
UTC products are not designed for use in life support appliances, devices or systems where malfunction
of these products can be reasonably expected to result in personal injury. Reproduction in whole or in
part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to
make changes to information published in this document, including without limitation specifications and
product descriptions, at any time and without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R203-015.M
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