UNISONIC TECHNOLOGIES CO., LTD
UTM6016
8.0A, 60V N-CHANNEL FAST
SWITCHING MOSFET
1
Power MOSFET
1
TO-220
TO-252
DESCRIPTION
The UTC
UTM6016
is an N-Channel MOSFET, it uses UTC’s
advanced technology to provide customers with a minimum on-state
resistance, high switching speed and low gate charge.
The UTC
UTM6016
is suitable for application in networking
DC-DC power system and LCD/LED back light, etc.
1
FEATURES
SOP-8
DFN-8(5x6)
* R
DS(ON)
< 12 mΩ @ V
GS
= 10V, I
D
=8A
R
DS(ON)
< 15 mΩ @ V
GS
= 4.5V, I
D
=6A
* Low gate charge
* Excellent CdV/dt effect decline
* High switching speed
SYMBOL
ORDERING INFORMATION
1
G
G
S
S
2
D
D
S
S
Pin Assignment
3 4 5 6
S - -
-
S - -
-
S G D D
S G D D
7
-
-
D
D
8
-
-
D
D
Packing
Tube
Tape Reel
Tape Reel
Tape Reel
Ordering Number
Package
Lead Free
Halogen Free
UTM6016L-TA3-T
UTM6016G-TA3-T
TO-220
UTM6016L-TN3-R
UTM6016G-TN3-R
TO-252
-
UTM6016G-S08-R
SOP-8
-
UTM6016G-K08-5060-R DFN-8(5×6)
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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QW-R502-A76.F
UTM6016
MARKING
Package
Marking
Power MOSFET
TO-220 / TO-252
SOP-8
DFN-8(5×6)
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QW-R502-A76.F
UTM6016
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
60
V
Gate-Source Voltage
V
GSS
±20
V
Continuous
I
D
8.0
A
Drain Current
Pulsed (Note 2)
I
DM
32
A
Avalanche Current (Note 2)
I
AR
23
A
Avalanche Energy
Single Pulsed (Note 3)
E
AS
26
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
2.6
V/ns
TO-220
28
W
TO-252
40
W
Power Dissipation (Note 4)
P
D
SOP-8
5.2
W
DFN-8(5×6)
10.4
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L=0.1mH, I
AS
=23A, V
DD
=25V, R
G
=25
Ω,
Starting T
J
= 25°C
4. I
SD
≤8.0A,
di/dt≤200A/μs, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
5. The power dissipation is limited by 150°C junction temperature.
THERMAL CHARACTERISTICS (Note 1)
UNIT
°C/W
PARAMETER
SYMBOL
RATINGS
TO-220
62.5
Junction to Ambient
TO-252
θ
JA
110
SOP-8/DFN-8(5×6)
50
TO-220
4.38
TO-252
3.13
Junction to Case
θ
JC
SOP-8
24
DFN-8(5×6)
12
2
Notes: 1. The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width
≤
300µs, duty cycle
≤
2%.
°C/W
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QW-R502-A76.F
UTM6016
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise noted)
SYMBOL
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
TEST CONDITIONS
I
D
=250µA, V
GS
=0V
V
DS
=48V, V
GS
=0V
V
GS
=+20V, V
DS
=0V
V
GS
=-20V, V
DS
=0V
V
DS
=V
GS
, I
D
=250µA
V
GS
=10V, I
D
=8A
V
GS
=4.5V, I
D
=6A
V
DS
=5V, I
D
=8A
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Forward
Gate-Source Leakage Current
Reverse
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
Power MOSFET
MIN
60
TYP
MAX UNIT
V
µA
nA
nA
V
mΩ
mΩ
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
8
32
1.2
A
A
V
nS
nC
1
+100
-100
1.2
2.5
12
15
45
2880
208
167
160
9.0
21
90
106
938
285
Forward Transconductance
g
FS
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
GS
=0V, V
DS
=25V, f=1.0MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge (Note 1)
Q
G
V
DS
=50V, I
D
=1.3A, V
GS
=10V
Gate to Source Charge
Q
GS
I
G
=100μA
Gate to Drain Charge
Q
GD
Turn-ON Delay Time (Note 1)
t
D(ON)
V
DD
=30V, I
D
=0.5A, R
G
=25Ω,
Rise Time
t
R
V
GS
=0V
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
Maximum Body-Diode Pulsed Current
I
SM
Drain-Source Diode Forward Voltage (Note 1)
V
SD
I
S
=8.0A, V
GS
=0V
Body Diode Reverse Recovery Time (Note 1)
t
rr
I
S
=8.0A, V
GS
=0V,
dI
F
/dt=100A/µs
Body Diode Reverse Recovery Charge
Q
rr
Notes: 1. The data tested by pulsed, pulse width≤300µs, duty cycle≤2%.
2. The power dissipation is limited by 150°C junction temperature.
210
430
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QW-R502-A76.F
UTM6016
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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QW-R502-A76.F
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