UNISONIC TECHNOLOGIES CO., LTD
MJE13005
NPN SILICON POWER
TRANSISTORS
DESCRIPTION
NPN SILICON TRANSISTOR
These devices are designed for high-voltage, high-speed
power switching inductive circuits where fall time is critical.
They are particularly suited for 115 and 220 V SWITCHMODE.
FEATURES
* V
CEO(SUS)
= 400 V
* Reverse bias SOA with inductive loads @ T
C
= 100°С
* Inductive switching matrix 2 to 4 Amp, 25 and 100°С
t
C
@ 3A, 100°С is 180 ns (Typ)
* 700V blocking capability
* SOA and switching applications information
APPLICATIONS
* Switching regulator’s, inverters
* Motor controls
* Solenoid/Relay drivers
* Deflection circuits
ORDERING INFORMATION
Ordering Number
Halogen Free
MJE13005G-x-TA3-T
MJE13005G-x-TF3-T
MJE13005G-x-TM3-T
MJE13005G-x-TMS-T
MJE13005G-x-TMS2-T
MJE13005G-x-TMS4-T
MJE13005G-x-TN3-R
MJE13005G-x-TND-R
MJE13005G-x-T2Q-T
MJE13005G-x-TQ3-T
MJE13005G-x-TQ3-R
MJE13005G-x-T60-K
MJE13005G-x-T6S-K
C: Collector
E: Emitter
Package
TO-220
TO-220F
TO-251
TO-251S
TO-251S2
TO-251S4
TO-252
TO-252D
TO-262
TO-263
TO-263
TO-126
TO-126S
Pin Assignment
1
2
3
B
C
E
B
C
E
B
C
E
B
C
E
B
C
E
B
C
E
B
C
E
B
C
E
B
C
E
B
C
E
B
C
E
B
C
E
B
C
E
Packing
Tube
Tube
Tube
Tube
Tube
Tube
Tape Reel
Tape Reel
Tube
Tube
Tape Reel
Bulk
Bulk
Lead Free
MJE13005L-x-TA3-T
MJE13005L-x-TF3-T
MJE13005L-x-TM3-T
MJE13005L-x-TMS-T
MJE13005L-x-TMS2-T
MJE13005L-x-TMS4-T
MJE13005L-x-TN3-R
MJE13005L-x-TND-R
MJE13005L-x-T2Q-T
MJE13005L-x-TQ3-T
MJE13005L-x-TQ3-R
MJE13005L-x-T60-K
MJE13005L-x-T6S-K
Note: Pin Assignment: B: Base
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Copyright © 2014 Unisonic Technologies Co., Ltd
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MJE13005
MARKING
PACKAGE
TO-220
TO-220F
TO-251
TO-251S
TO-251S2
TO-126
TO-126S
TO-251S4
TO-252
TO-252D
TO-262
TO-263
NPN SILICON TRANSISTOR
MARKING
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ABSOLUTE MAXIMUM RATINGS
SYMBOL
V
CEO(SUS)
V
CES
V
CBO
V
EBO
I
C
I
CM
I
B
I
BM
I
E
I
EM
PARAMETER
Collector-Emitter Voltage
Collector-Emitter Voltage (V
BE
=0)
Collector-Base Voltage
Emitter Base Voltage
Collector Current
NPN SILICON TRANSISTOR
Continuous
Peak (1)
Continuous
Base Current
Peak (1)
Continuous
Emitter Current
Peak (1)
TO-126/TO-126S
40
TO-220F
TO-251/TO-251S
W
TO-251S2/TO-251S4
50
Power Dissipation at T
A
=25°С
TO-252/TO-252D
TO-220/TO-263
75
TO-262
P
D
TO-126/TO-126S
320
TO-220F
TO-251/TO-251S
mW/°С
TO-251S2/TO-251S4
400
Derate above 25°С
TO-252/TO-252D
TO-220/TO-263
600
TO-262
Operating and Storage Junction Temperature
T
J
, T
STG
-65 ~ +150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
RATINGS
400
700
700
9
4
8
2
4
6
12
UNIT
V
V
V
V
A
A
A
A
A
A
THERMAL DATA
PARAMETER
TO-126/TO-126S
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
TO-220/TO-263
TO-262/TO-220F
TO-126/TO-126S
TO-220F
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
TO-220/TO-263
TO-262
SYMBOL
RATINGS
89
110
62.5
3.125
θ
JC
2.5
1.67
°С/W
UNIT
Junction to Ambient
θ
JA
°С/W
Junction to Case
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PARAMETER
OFF CHARACTERISTICS
(Note 1)
Collector-Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
SECOND BREAKDOWN
Second Breakdown Collector Current
with bass forward biased
Clamped Inductive SOA with Base
Reverse Biased
ON CHARACTERISTICS
(Note 1)
DC Current Gain
SYMBOL
NPN SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS
(T
C
=25°С, unless otherwise specified)
TEST CONDITIONS
MIN
400
1
mA
5
1
See Fig. 11
See Fig. 12
I
C
=0.5A, V
CE
=5V
I
C
=1A, V
CE
=5V
I
C
=2A, V
CE
=5V
I
C
=1A, I
B
=0.2A
I
C
=2A, I
B
=0.5A
I
C
=4A, I
B
=1A
I
C
=2A, I
B
=0.5A, Ta=100°С
I
C
=1A, I
B
=0.2A
I
C
=2A, I
B
=0.5A
I
C
=2A, I
B
=0.5A, T
C
=100°С
15
10
8
50
60
40
0.5
0.6
1
1
1.2
1.6
1.5
mA
TYP
MAX
UNIT
V
V
CEO(SUS)
I
C
=10mA , I
B
=0
V
CBO
=Rated Value,
V
BE(OFF)
=1.5V
I
CBO
V
CBO
=Rated Value,
V
BE(OFF)
=1.5V, T
C
=100°С
I
EBO
V
EB
=9V, I
C
=0
I
S/B
RBSOA
h
FE1
h
FE2
h
FE3
V
CE(SAT)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
V
BE (SAT)
V
V
V
V
V
V
V
MHz
pF
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product
f
T
I
C
=500mA, V
CE
=10V, f=1MHz
Output Capacitance
C
OB
V
CB
=10V, I
E
=0, f=0.1MHz
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
t
D
Rise Time
t
R
V
CC
=125V, I
C
=2A, I
B1
=I
B2
=0.4A,
t
P
=25μs, Duty Cycle≤1%
Storage Time
t
S
Fall Time
t
F
Note: 1. Pulse Test: Pulse Width=5ms, Duty Cycle≤10%
Note:
2. Pulse Test: P
W
=300μs, Duty Cycle≤2%
4
65
0.025
0.3
1.7
0.4
0.1
0.7
4
0.9
μs
μs
μs
μs
CLASSIFICATION OF h
FE1
RANK
RANGE
A
15 ~ 20
B
20 ~ 25
C
25 ~ 30
D
30 ~ 40
E
40 ~ 50
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MJE13005
NPN SILICON TRANSISTOR
APPLICATION INFORMATION
Table 1.Test Conditions for Dynamic Performance
Reverse Bias Safe Operating Area and Inductive Switching
Resistive
Switching
+5V
1N4933
0.001μF
33
MJE210
V
cc
L
MR826*
Vclamp
*SELECTED FOR≧1kV
V
CE
R
B
D1
-4.0V
+125V
R
c
TUT
SCOPE
Test Circuits
5V
P
w
DUTY CYCLE≦10%
t
r
, t
f
≦10ns
68
1k
33 1N4933
2N2222
1k
+5V
1N4933
0.02μF 270
1k
2N2905
47
1/2W
MJE200
100
-V
BE
(off)
R
B
I
B
T.U.T.
I
c
5.1k
51
Note:
P
W
and V
cc
Adjusted for Desired I
c
R
B
Adjusted for Desired I
B1
Circuit Values
Coil Data :
V
CC
=20V
FERROXCUBE core #6656
Full Bobbin ( ~ 16 Turns) #16
GAP for 200μH/20 A
L
COIL
=200μH
V
CLAMP
=300V
V
CC
=125V
R
C
=62Ω
D1=1n5820 or
Equiv.
RB=22Ω
OUTPUT WAVEFORMS
t
F
CLAMPED
Test Waveforms
I
C
I
C(PK)
t
1
t
f
t
F
UNCLAMPED
t
t
2
t
1
Adjusted to
Obtain Ic
t
1
=
L
COIL
(I
CPK
)
V
CC
L
COIL
(I
CPK
)
V
CLAMP
Test Equipment
Scope-Tektronics
475 or Equivalent
V
CE
V
CE
or
V
CLAMP
TIME
t
2
t
t
2
=
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