UNISONIC TECHNOLOGIES CO., LTD
2SB649/A
BIPOLAR POWER GENERAL
PURPOSE TRANSISTOR
APPLICATIONS
1
TO-252
1
TO-92
2SD669/A
PNP SILICON TRANSISTOR
1
SOT-223
1
SOT-89
*
Low frequency power amplifier complementary pair with UTC
1
TO-92NL
1
TO-126
1
TO-126C
1
TO-126S
ORDERING INFORMATION
Ordering Number
Package
SOT-223
SOT-89
TO-252
TO-126
TO-126C
TO-126S
TO-92
TO-92
TO-92NL
TO-92NL
Pin Assignment
1
2
3
B
C
E
B
C
E
B
C
E
E
C
B
E
C
B
E
C
B
E
C
B
E
C
B
E
C
B
E
C
B
Packing
Tape Reel
Tape Reel
Tape Reel
Bulk
Bulk
Bulk
Tape Box
Bulk
Tape Box
Bulk
Lead Free
Halogen Free
-
2SB649xG-x-AA3-R
-
2SB649xG-x-AB3-R
2SB649xL-x-TN3-R
2SB649xG-x-TN3-R
2SB649xL-x-T60-K
2SB649xG-x-T60-K
2SB649xL-x-T6C-K
2SB649xG-x-T6C-K
2SB649xL-x-T6S-K
2SB649xG-x-T6S-K
2SB649xL-x-T92-B
2SB649xG-x-T92-B
2SB649xL-x-T92-K
2SB649xG-x-T92-K
2SB649xL-x-T9N-B
2SB649xG-x-T9N-B
2SB649xL-x-T9N-K
2SB649xG-x-T9N-K
Note: Pin Assignment: C: Collector
B: Base
E: Emitter
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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QW-R204-006.J
2SB649/A
MARKING
PACKAGE
2SB649
PNP SILICON TRANSISTOR
MARKING
2SB649A
SOT-223
SOT-89
TO-252
TO-92
TO-92NL
L: Lead Free
G: Halogen Free
Data Code
UTC
2SB649
L: Lead Free
G: Halogen Free
Data Code
UTC
2SB649A
TO-126
TO-126C
TO-126S
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R204-006.J
2SB649/A
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-180
V
2SB649
-120
V
Collector-Emitter Voltage
V
CEO
2SB649A
-160
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
I
C
-1.5
A
Collector Peak Current
l
C(PEAK)
-3
A
SOT-89
0.5
W
SOT-223
1
W
TO-92/TO-92NL
0.6
W
Power Dissipation
P
D
TO-126
1
W
TO-126C/TO-126S
1.3
TO-252
2
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
SYMBOL
RATINGS
38
15
80
6.25
10
4.5
UNIT
PARAMETER
SOT-89
SOT-223
TO-92/ TO-92NL
Junction to Case
TO-126
TO-126C/TO-126S
TO-252
θ
JC
°C/W
ELECTRICAL CHARACTERISTICS
(T
A
=25°C, unless otherwise specified)
SYMBOL
TEST CONDITIONS
BV
CBO
I
C
=-1mA, I
E
=0
BV
CEO
BV
EBO
I
CBO
h
FE1
h
FE2
h
FE1
h
FE2
V
CE(SAT)
V
BE
f
T
Cob
I
C
=-10mA, R
BE
=
I
E
=-1mA, I
C
=0
V
CB
=-160V, I
E
=0
V
CE
=-5V, I
C
=-150mA (note)
V
CE
=-5V, I
C
=-500mA (note)
V
CE
=-5V, I
C
=-150mA (note)
V
CE
=-5V, I
C
=-500mA (note)
I
C
=-600mA, I
B
=-50mA
V
CE
=-5V, I
C
=-150mA
V
CE
=-5V,I
C
=-150mA
V
CB
=-10V, I
E
=0, f=1MHz
MIN
-180
-120
-160
-5
60
30
60
30
TYP
MAX UNIT
V
V
-10
320
200
-1
-1.5
140
27
V
V
MHz
pF
V
μA
PARAMETER
Collector to Base Breakdown Voltage
2SB649
Collector to Emitter
Breakdown Voltage
2SB649A
Emitter to Base Breakdown Voltage
Collector Cut-off Current
2SB649
DC Current Gain
2SB649A
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Current Gain Bandwidth Product
Output Capacitance
Note: Pulse test.
CLASSIFICATION OF h
FE1
RANGE
2SB649
2SB649A
B
60-120
60-120
RANK
C
100-200
100-200
D
160-320
-
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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2SB649/A
TYPICAL CHARACTERISTICS
Typical Output Characteristecs
-5
.5
PNP SILICON TRANSISTOR
Typical Transfer Characteristics
-500
Collector Current, I
C
(mA)
V
CE
=-5V
1.0
0.8
0.6
0.4
0.2
Collector Current, I
C
(A)
0
-4.
5
-3. 0
-3.
5
-2.
-4
.
5 -5
.0
-100
5°
С
=2
P
D
0W
-2.0
-1.5
-1.0
-0.5mA
I
B
=0
-10
T
C
=25°С
0
-10
-20
-30
-40
-50
Collector to Emitter Voltage, V
CE
(V)
-1
0
-0.2
-0.4
-0.6
-0.8
-1.0
Base to Emitter Voltage, V
BE
(V)
Collector to Emitter Saturation
Voltage vs. Collector Current
DC Current Transfer Ratio, h
FE
Collector to Emitter Saturation
Voltage, V
CE(SAT)
(V)
DC Current Transfer Ratio vs.
Collector Current
350
V
CE
=-5V
5°
С
300
Ta=7
250
200
150
100
50
1
-1
-10
-100
-1,000
Collector Current, I
C
(mA)
Base to Emitter Saturation Voltage
vs. Collector Current
I
C
=10I
B
25°
С
T
C
=-
25°
С
75°
С
-25°
С
25°
С
-1.2
-1.0
-0.8
-0.6
-0.4
-0.2
0
I
C
=10 I
B
Ta=7
25°
С
-25°
С
T
°
С
75
=
C
-1
-10
-100
Collector Current, I
C
(mA)
-1.2
Base to Emitter Saturation Voltage,
V
BE(SAT)
(V)
-1.0
-0.8
-0.6
-0.4
-0.2
0
-1
Gain Bandwidth Product, f
T
(MHz)
Gain Bandwidth Product
vs. Collector Current
-240
V
CE
=5V
Ta=25°С
-200
-160
-120
-80
-40
0
-10
-3
-10 -30 -100 -300 -1000
Collector Current, I
C
(mA)
-30
-100
-300
Collector Current, I
C
(mA)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
-2
5°
2
С
5°
С
-1,000
-1000
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2SB649/A
TYPICAL CHARACTERISTICS(Cont.)
PNP SILICON TRANSISTOR
Collector Output Capacitance, C
ob
(pF)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Collector Current, I
C
(A)
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QW-R204-006.J
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