UNISONIC TECHNOLOGIES CO., LTD
4N60K-TC
4A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
4N60K-TC
is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and have a high
rugged avalanche characteristics. This power MOSFET is usually
used at high speed switching applications in power supplies, PWM
motor controls, high efficient DC to DC converters and bridge
circuits.
FEATURES
* R
DS(ON)
< 2.5Ω @ V
GS
= 10 V, I
D
= 2.0 A
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, high Ruggedness
SYMBOL
ORDERING INFORMATION
Package
TO-220
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-251
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tube
Tube
Tape Reel
Ordering Number
Lead Free
Halogen Free
4N60KL-TA3-T
4N60KG-TA3-T
4N60KL-TF3-T
4N60KG-TF3-T
4N60KL-TF1-T
4N60KG-TF1-T
4N60KL-TF2-T
4N60KG-TF2-T
4N60KL-TF3T-T
4N60KG-TF3T-T
4N60KL-TM3-T
4N60KG-TM3-T
4N60KL-TN3-R
4N60KG-TN3-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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Copyright © 2018 Unisonic Technologies Co., Ltd
1 of 9
QW-R205-103.D
4N60K-TC
MARKING
Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD
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QW-R205-103.D
4N60K-TC
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°С, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
600
V
Gate-Source Voltage
V
GSS
±30
V
Avalanche Current (Note 2)
I
AR
4.0
A
Continuous
I
D
4.0
A
Drain Current
16
A
Pulsed (Note 2)
I
DM
Avalanche Energy
Single Pulsed (Note 3)
E
AS
100
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
1.5
V/ns
TO-220
106
W
TO-220F/TO-220F1
Power Dissipation
36
W
TO-220F2/TO-220F3
TO-251/TO-252
50
W
P
D
TO-220
0.85
W/°C
TO-220F/TO-220F1
Derate above 25°C
0.288
W/°C
TO-220F2/TO-220F3
0.40
W/°C
TO-251/TO-252
Junction Temperature
T
J
+150
°С
Operating Temperature
T
OPR
-55 ~ +150
°С
Storage Temperature
T
STG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 13mH, I
AS
= 4.0A, V
DD
= 50V, R
G
= 25
Ω,
Starting T
J
= 25°C
4. I
SD
≤4.0A,
di/dt
≤200A/μs,
V
DD
≤BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
SYMBOL
θ
JA
RATINGS
62.5
110
1.18
θ
JC
3.47
3.4
2.5
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
PARAMETER
TO-220/TO-220F
TO-220F1/TO-220F2
Junction-to-Ambient
TO-220F3
TO-251/TO-252
TO-220
TO-220F/TO-220F1
Junction-to-Case
TO-220F3
TO-220F2
TO-251/TO-252
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QW-R205-103.D
4N60K-TC
ELECTRICAL CHARACTERISTICS
(T
C
=25°С, unless otherwise specified)
SYMBOL
BV
DSS
I
DSS
Forward
Reverse
I
GSS
TEST CONDITIONS
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Power MOSFET
MIN TYP MAX UNIT
V
μA
μA
nA
nA
V
Ω
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
4.0
16
1.4
248
0.15
A
A
V
nS
μC
V
GS
=0V, I
D
=250μA
600
V
DS
=600V, V
GS
=0V
V
DS
=600V, V
GS
=0V, T
C
=125°С
V
GS
=30V, V
DS
=0V
V
GS
= -30V, V
DS
=0V
2.0
10
10
100
-100
4.0
2.5
510
58
5.6
17.4
5
4.6
36
29
146
34
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250μA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10 V, I
D
=2.0A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
V
DS
=25V, V
GS
=0V, f=1MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Total Gate Charge
Q
G
V
DS
=200V, V
GS
=10V, I
D
=2.0A
Gate-Source Charge
Q
GS
I
G
= 10mA (Note1, 2)
Gate-Drain Charge
Q
GD
Turn-On Delay Time
t
D(ON)
Turn-On Rise Time
t
R
V
DS
=30V, V
GS
=10V, I
D
=0.5A,
R
G
=25Ω (Note1, 2)
Turn-Off Delay Time
t
D(OFF)
Turn-Off Fall Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0V, I
S
= 4.0A
Reverse Recovery Time
t
rr
V
GS
= 0V, I
S
= 4.0A,
dI
F
/ dt =100A/μs (Note 1)
Reverse Recovery Charge
Q
rr
Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
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www.unisonic.com.tw
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QW-R205-103.D
4N60K-TC
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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www.unisonic.com.tw
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QW-R205-103.D
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