UNISONIC TECHNOLOGIES CO., LTD
UTT25P10
25A, 100V P-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
UTT25P10
is a P-channel power MOSFET
using UTC’s advanced technology to provide the customers
with high switching speed and a minimum on-state
resistance, and it can also withstand high energy in the
avalanche.
This UTC
UTT25P10
is suitable for motor drivers,
switching regulators, converters and relay drivers, etc.
FEATURES
* R
DS(ON)
< 0.15Ω @ V
GS
= -10V, I
D
= -25A
* High Switching Speed
SYMBOL
ORDERING INFORMATION
Package
TO-220
TO-220F
TO-252
TO-263
TO-263
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tape Reel
Tube
Tape Reel
Ordering Number
Lead Free
Halogen Free
UTT25P10L-TA3-T
UTT25P10G-TA3-T
UTT25P10L-TF3-T
UTT25P10G-TF3-T
UTT25P10L-TN3-R
UTT25P10G-TN3-R
UTT25P10L-TQ2-T
UTT25P10G-TQ2-T
UTT25P10L-TQ2-R
UTT25P10G-TQ2-R
Note: Pin Assignment: G: Gate D: Drain
S: Source
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Copyright © 2016 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-597.H
UTT25P10
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
SYMBOL
V
DSS
V
DGR
V
GSS
I
D
I
DM
E
AS
RATINGS
UNIT
-100
V
-100
V
±20
V
Continuous
-25
A
Drain Current
-60
A
Pulsed (Note 2)
Single Pulsed Avalanche Energy (Note 3)
70
mJ
TO-220/TO-263
100
Power Dissipation
P
D
W
TO-220F
2
TO-252
50
Junction Temperature
T
J
-55~+150
°C
Storage Temperature
T
STG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive rating: pulse width limited by maximum junction temperature.
3. L = 0.35mH, I
AS
= 20A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25°C
PARAMETER
Drain-Source Voltage (Note 2)
Drain-Gate Voltage (R
GS
=20kΩ)
Gate-Source Voltage
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
TO-220/TO-263
TO-220F
TO-252
θ
JC
RATINGS
0.83
4.5
2.5
UNIT
°C/W
Junction to Case
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
SYMBOL
BV
DSS
I
DSS
Forward
Reverse
I
GSS
TEST CONDITIONS
I
D
= -250µA, V
GS
=0V
V
DS
=Rated BV
DSS
, V
GS
=0V
V
DS
=0.8xRated BV
DSS
,
V
GS
=0V , T
C
=125°C
V
GS
=+20V, V
DS
=0V
V
GS
=-20V, V
DS
=0V
MIN
-100
-1
-25
+100
-100
-1
-3
0.15
430
145
110
285
16
16
85
60
780
150
-1.4
µA
nA
nA
V
Ω
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
TYP MAX UNIT
V
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
= -250µA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=-10V, I
D
= -25A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
GS
=0V, V
DS
=-25V, f=1MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
GS
=-10V, V
DD
=-50V,
Gate to Source Charge
Q
GS
I
D
=-1.3A, I
G
= -100µA
Gate to Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Rise Time
t
R
I
D
=-0.5A, V
DS
=-30V,
R
GS
=25Ω,V
GS
=-10V
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage (Note 1)
V
SD
I
SD
=-12.5A
Note: Pulse test: pulse width
≤
300µs, duty cycle
≤
2%.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-597.H
UTT25P10
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 6
QW-R502-597.H
UTT25P10
Avalanche Current
Drain Current, -I
D
(A)
- I
AR
[A]
Drain Current, -I
D
(µA)
TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGIES CO., LTD
Continuous Drain-Source Diode
Forward Current, -I
S
(A)
Drain Current, -I
D
(µA)
www.unisonic.com.tw
Power MOSFET
QW-R502-597.H
5 of 6
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