UNISONIC TECHNOLOGIES CO., LTD
2N3904
NPN GENERAL PURPOSE
AMPLIFIER
FEATURES
NPN SILICON TRANSISTOR
* Collector-Emitter Voltage: V
CEO
=40V
* Complementary to 2N3906
FEATURES
ORDERING INFORMATION
Pin Assignment
1
2
3
B
C
E
E
B
C
E
B
C
Packing
Tape Reel
Tape Box
Bulk
Ordering Number
Package
Lead Free
Halogen Free
2N3904L-AB3-R
2N3904G-AB3-R
SOT-89
2N3904L-T92-B
2N3904G-T92-B
TO-92
2N3904L-T92-K
2N3904G-T92-K
TO-92
Note: Pin Assignment: B: Base
C: Collector
E: Emitter
MARKING
SOT-89
TO-92
www.unisonic.com.tw
Copyright © 2017 Unisonic Technologies Co., Ltd
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QW-R201-027.G
2N3904
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
(T
A
=25°С, unless otherwise specified)
RATINGS
UNIT
60
V
40
V
6
V
200
mA
SOT-89
500
Collector Dissipation
P
C
mW
TO-92
625
Junction Temperature
T
J
+150
°С
Operating and Storage Temperature
T
STG
-55 ~ +150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
SOT-89
TO-92
SOT-89
TO-92
θ
JA
θ
JC
RATING
220
200
38
83.3
UNIT
°C/W
°C/W
°C/W
°C/W
Junction to Ambient
Junction to Case
ELECTRICAL CHARACTERISTICS
(T
A
=25°С, unless otherwise specified)
MIN TYP MAX UNIT
60
V
40
V
6
V
0.2
V
0.3
V
0.65
0.85 V
0.95 V
50
nA
50
nA
40
70
100
300
60
30
300
MHz
4
pF
70
ns
250 ns
SYMBOL
TEST CONDITIONS
BV
CBO
I
C
=10A, I
E
=0
BV
CEO
I
C
=1mA,I
B
=0 (Note)
BV
EBO
I
E
=10A, I
C
=0
V
CE(SAT)1
I
C
=10mA, I
B
=1mA
V
CE(SAT)2
I
C
=50mA, I
B
=5mA
Base-Emitter Saturation Voltage
V
BE(SAT)1
I
C
=10mA, I
B
=1mA
(Note)
V
BE(SAT)2
I
C
=50mA, I
B
=5mA
Collector Cut-off Current
I
CBO
V
CE
=30V, V
EB
=3V
Base Cut-off Current
I
BL
V
CE
=30V, V
EB
=3V
h
FE1
V
CE
=1V, I
C
=0.1mA
h
FE2
V
CE
=1V, I
C
=1mA
DC Current Gain (note)
h
FE3
V
CE
=1V, I
C
=10mA
h
FE4
V
CE
=1V, I
C
=50mA
h
FE5
V
CE
=1V, I
C
=100mA
Current Gain Bandwidth Product
f
T
V
CE
=20V, I
C
=10mA, f=100MHz
Output Capacitance
C
OB
V
CB
=5V, I
E
=0, f=1MHz
Turn on Time
t
ON
V
CC
=3V,V
BE
=0.5V,I
C
=10mA, I
B
1=1mA
Turn off Time
t
OFF
I
B
1=1
B
2=1mA
Note: Pulse test: Pulse Width≦300s, Duty Cycle≦2%
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
(Note)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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2N3904
TYPICAL CHARACTERISTICS
240
DC Current Gain, h
FE
200
160
120
80
40
0
0.1 0.3 0.5 1
3 5 10
30 50100
V
CE
=1V
Current Gain-Bandwidth Product, f
T
(MHz)
h
FE
vs. I
C
NPN SILICON TRANSISTOR
f
T
vs. I
C
1000
500
300
V
CE
=20V
100
50
30
10
0.1 0.3 0.5 1
3 5 10
30 50100
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
Saturation Voltage, V
BE(SAT)
, V
CE(SAT)
Voltage, V(V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Voltage, V(V)
Capacitance, C
OB
(pF)
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2N3904
TYPICAL CHARACTERISTICS(Cont.)
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R201-027.G
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