UNISONIC TECHNOLOGIES CO., LTD
MMBTA44/45
HIGH VOLTAGE TRANSISTORS
FEATURES
3
NPN SILICON TRANSISTOR
*Collector-Emitter voltage: V
CEO
=400V (UTC
MMBTA44)
V
CEO
=350V (UTC
MMBTA45)
*Collector current up to 300mA
*Complement to UTC
MMBTA94/93
*Power Dissipation: P
D
(max)=350mW
2
1
SOT-23
(JEDEC TO-236)
ORDERING INFORMATION
Ordering Number
MMBTA44G-AE3-R
MMBTA45G-AE3-R
Pin Assignment: E: Emitter
Package
SOT-23
SOT-23
C: Collector
Pin Assignment
1
2
3
E
B
C
E
B
C
Packing
Tape Reel
Tape Reel
Note:
B: Base
MARKINGS
MMBTA44
MMBTA45
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd.
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ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
NPN SILICON TRANSISTOR
RATINGS
UNIT
MMBTA44
500
V
Collector-Base Voltage
V
CBO
MMBTA45
400
V
MMBTA44
400
V
Collector-Emitter Voltage
V
CEO
MMBTA45
350
V
Emitter-Base Voltage
V
EBO
6
V
Collector Current
I
C
300
mA
T
A
=25°C
350
mW
Power Dissipation
P
D
T
C
=25°C
1.5
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified)
SYMBOL
BV
CBO
BV
CEO
BV
EBO
V
CE(SAT)
V
BE(SAT)
I
CBO
I
CES
I
EBO
h
FE1
h
FE2
h
FE3
h
FE4
f
T
C
ob
TEST CONDITIONS
I
C
=100μA, I
B
=0
I
C
=1mA, I
B
=0
I
E
=100μA, I
C
=0
I
C
=1mA, I
B
=0.1mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
I
C
10mA, I
B
=1mA
V
CB
=400V, I
E
=0
V
CB
=320V, I
E
=0
V
CE
=400V, I
B
=0
V
CE
=320V, I
B
=0
V
EB
=4V, I
C
=0
V
CE
=10V, I
C
=1mA
V
CE
=10V, I
C
=10mA
V
CE
=10V, I
C
=50mA
V
CE
=10V, I
C
=100mA
V
CE
=20V, I
C
=10mA
f=100MHz
V
CB
=20V, I
E
=0, f=1MHz
MIN
500
400
400
350
6
TYP
MAX
UNIT
V
V
V
V
V
V
V
V
V
μA
μA
μA
μA
μA
PARAMETER
MMBTA44
Collector-Base Breakdown
Voltage
MMBTA45
Collector-Emitter Breakdown MMBTA44
Voltage
MMBTA45
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
MMBTA44
Collector Cut-off Current
MMBTA45
MMBTA44
Collector Cut-off Current
MMBTA45
Emitter Cut-off Current
DC Current Gain (Note)
0.4
0.5
0.75
0.75
0.1
0.1
0.5
0.5
0.1
40
50
45
40
50
7
240
Current Gain Bandwidth Product
Output Capacitance
Note: Pulse test: P
W
<300μs,
Duty Cycle<2%
MHz
pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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TYPICAL CHARACTERISTICS
NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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TYPICAL CHARACTERISTICS(cont.)
High Frequency Current Gain
10
2
Small Signal Current Gain, h
FE
V
CE
=10 V
f =10 MHz
Ta =25°C
10
4
Collector Current, I
C
(mA)
NPN SILICON TRANSISTOR
Safe Operating Area
Valid Duty
Cycle <10 %
1ms
1s
Ta
10
3
10
1
0.1ms
10
2
Ta
=2
5°
C
=2
5°
C
10
0
10
1
10
-1
10
-1
10
10
10
Collector Current, I
C
(mA)
0
1
2
10
3
10
0
MPSA 44
10
0
10
10
10
Collector Voltage(V)
1
2
3
10
4
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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