UNISONIC TECHNOLOGIES CO., LTD
MMBT9012
1W OUTPUT AMPLIFIER OF
POTABLE RADIOS IN CLASS
B PUSH-PULL OPERATION
3
PNP SILICON TRANSISTOR
FEATURES
2
1
*High total power dissipation. (625mW)
*High collector current. (-500mA)
*Excellent hFE linearity
*Complementary to UTC MMBT9013
SOT-23
(JEDEC TO-236)
ORDERING INFORMATION
Ordering Number
Package
SOT-23
C: Collector
Pin Assignment
1
2
3
E
B
C
Packing
Tape Reel
Note:
MMBT9012G-x-AE3-R
Pin Assignment: E: Emitter
B: Base
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 3
QW-R206-020.B
MMBT9012
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector dissipation
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C, unless otherwise specified)
RATING
-40
-20
-5
-500
225
150
-55 ~ +150
UNIT
V
V
V
mA
mW
C
C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C, unless otherwise specified)
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
V
BE(on)
TEST CONDITIONS
I
C
= -100μA, I
E
=0
I
C
= -1mA, I
B
=0
I
E
= -100μA, I
C
=0
V
CB
= -25V, I
E
=0
V
EB
= -3V, I
C
=0
V
CE
= -1V, I
C
= -50mA
V
CE
= -1V, I
C
= -500mA
I
C
= -500mA, I
B
= -50mA
I
C
= -500mA, I
B
= -50mA
V
CE
=-1V, I
C
= -10mA
MIN
-40
-20
-5
TYP
MAX
UNIT
V
V
V
nA
nA
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC Current Gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter on voltage
64
40
-0.6
120
90
-0.18
-0.95
-0.67
-100
-100
300
-0.6
-1.2
-0.7
V
V
V
CLASSIFICATION OF h
FE1
RANK
RANGE
D
64-91
E
78-112
F
96-135
G
112-166
H
144-202
I
190-300
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R206-020.B
MMBT9012
TYPICAL CHARACTERICS
Static Characteristic
-50
I
B
=-250μA
Collector Current, I
C
(mA)
-40
I
B
=-200μA
I
B
=-150μA
I
B
=-100μA
I
B
=-50μA
-10
0
Dc Current Gain, h
FE
1000
500
300
PNP SILICON TRANSISTOR
Dc Current Gain
-30
V
CE
=-1V
100
50
30
-20
0
-10
-20
-30
-40
-50
10
1
-30 -50
-100
-300 -500 -1000
Collector - Emitter Voltage, V
CE
(V)
Collector Current, I
C
(mA)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Current Gain-Bandwidth Product, f
T
(MHz)
Saturation Voltage,
V
BE(SAT),
V
CE(SAT)
(mV)
3 of 3
QW-R206-020.B
FPGA/CPLD
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
