UNISONIC TECHNOLOGIES CO., LTD
BT169
SCRS
DESCRIPTION
SCR
Passivated, sensitive gate thyristors in a plastic envelope,
intended for use in general purpose switching and phase control
applications. These devices are intended to be interfaced
directly to microcontrollers, logic integrated circuits and other
low power gate trigger circuits.
1
SOT-223
SYMBOL
1
TO-92
ORDERING INFORMATION
Ordering Number
Halogen Free
BT169BG-T92-B
BT169BG-T92-K
BT169DG-T92-B
BT169DG-T92-K
BT169EG-T92-B
BT169EG-T92-K
BT169GP-T92-B
BT169GP-T92-K
BT169HG-AA3-R
BT169HG-T92-B
BT169HG-T92-K
G: Gate
A: Anode
Package
TO-92
TO-92
TO-92
TO-92
TO-92
TO-92
TO-92
TO-92
SOT-223
TO-92
TO-92
Pin Assignment
1
2
3
K
G
A
K
G
A
K
G
A
K
G
A
K
G
A
K
G
A
K
G
A
K
G
A
K
A
G
K
G
A
K
G
A
Packing
Tape Box
Bulk
Tape Box
Bulk
Tape Box
Bulk
Tape Box
Bulk
Tape Reel
Tape Box
Bulk
Lead Free
BT169BL-T92-B
BT169BL-T92-K
BT169DL-T92-B
BT169DL-T92-K
BT169EL-T92-B
BT169EL-92-K
BT169GL-T92-B
BT169GL-T92-K
BT169HL-AA3-R
BT169HL-T92-B
BT169HL-T92-K
Note: Pin Assignment: K: Cathode
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Copyright © 2017 Unisonic Technologies Co., Ltd
1 of 7
QW-R301-015.G
BT169
MARKING
Package
MARKING
SCR
SOT-223
TO-92
TO-92
(For BT169G)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 7
QW-R301-015.G
BT169
QUICK REFERENCE DATA
PARAMETER
Repetitive Peak Off-State Voltages
Average On-State Current
RMS On-State Current
Non-Repetitive Peak On-State Current
SYMBOL
V
DRM
, V
RRM
I
T(AV)
I
T(RMS)
I
TSM
BT169B BT169D BT169E BT169G BT169H
MAX
MAX
MAX
MAX
MAX
200
400
500
600
800
0.5
0.5
0.5
0.5
0.5
0.8
0.8
0.8
0.8
0.8
8
8
8
8
8
SCR
UNIT
MAX
V
A
A
A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
200
400
500
600
800
5
5
1
UNIT
BT169B
BT169D
Repetitive Peak Off-State Voltages(Note 2) BT169E
V
DRM
,V
RRM
V
BT169G
BT169H
Peak Gate Voltage
V
GM
V
Peak Reverse Gate Voltage
V
RGM
V
Peak Gate Current
I
GM
A
Average On-State Current
I
T(AV)
0.5
A
(Half Sine Wave, T
LEAD
≦
83C)
RMS On-State Current (All Conduction Angles)
I
T(RMS)
0.8
A
Non-Repetitive Peak On-State Current
t=10ms
8
A
I
TSM
(Half Sine Wave, T
J
=25C Prior to Surge) t=8.3ms
9
A
2
2
I t For Fusing (t=10ms)
It
0.32
A
2
S
Repetitive Rate of Rise of On-State Current After
dI
T
/dt
50
A/s
Triggering (I
TM
=2A,I
G
=10mA, dI
G
/dt=100mA/s)
Peak Gate Power
P
GM
2
W
Average Gate Power (Over any 20 ms period)
P
G(AV)
0.1
W
Junction Temperature
T
J
+125
C
Storage Temperature
T
STG
-40 ~ +150
C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the
thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/μs.
THERMAL DATA
SYMBOL
SOT-223
TO-92
θ
JA
RATINGS
150
180
UNIT
C/W
C/W
PARAMETER
Thermal Resistance Junction to Ambient
(typ.)
Note: pcb mounted, lead length=4mm
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R301-015.G
BT169
ELECTRICAL CHARACTERISTICS
(T
J
=25C, unless otherwise specified)
SYMBOL
I
GT
I
L
I
H
V
T
V
GT
I
D
,I
R
TSET CONDITIONS
V
D
=12V, I
T
=10 mA, gate open circuit
V
D
=12V, I
GT
=0.5mA, R
GK
=1k
V
D
=12V,I
GT
=0.5mA, R
GK
=1k
I
T
=1A
V
D
=12V, I
T
=10mA, gate open circuit
V
D
=V
DRM(MAX)
, I
T
=10mA, T
J
=125C, gate
open circuit
V
D
=V
DRM(MAX)
, V
R
=V
RRM(MA\X)
,
T
J
=125C, R
GK
=1k
V
DM
=67% V
DRM(MAX)
, T
J
=125C,
exponential waveform, R
GK
=1k
I
TM
=2A,V
D
=V
DRM(MAX)
, I
G
=10mA,
dIG/dt=0.1A/s
V
D
=67% V
DRM(MAX)
, T
J
=125C,
I
TM
=1.6A,V
R
=35V, d
ITM
/dt=30A/s,
V
D
/dt=2V/s, R
GK
=1k
MIN
25
2
2
1.2
0.2
0.5
0.3
0.05
TYP
MAX
200
6
5
1.35
0.8
0.1
PARAMETER
STATIC CHARACTERISTICS
Gate Trigger Current
Latching Current
Holding Current
On-State Voltage
Gate Trigger Voltage
Off-State Leakage Current
DYNAMIC CHARACTERISTICS
Ciritical Rate of Rise of Off-State
Voltage
Gate Controlled Turn-On Time
Circuit Commutated Turn-Off
Time
SCR
UNIT
μA
mA
mA
V
V
mA
dV
D
/dt
t
gt
tq
500
800
2
100
V/s
s
s
UNISONIC TECHNOLOGIES CO., LTD
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QW-R301-015.G
BT169
Maximum Permissible RMS Current,
I
T(RMS)
Maximum Permissible Non-Repetitive
Peak On-State Current, I
TSM
(A)
Maximum On-State Dissipation, P
D
(W)
TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGIES CO., LTD
Tc
(MAX)
(C)
Maximum Permissible Repetitive RMS
On-State Current, I
T(RMS)
(A)
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Maximnum Permissible Non-Repetitive Peak
On-State Current, I
TSM
(A)
Normalised Gate Trigger Voltage
V
GT
(T
J
)
V
GT
(25°C)
QW-R301-015.G
SCR
5 of 7
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