UNISONIC TECHNOLOGIES CO., LTD
UT2302
N-CHANNEL
ENHANCEMENT MODE
DESCRIPTION
Power MOSFET
The UTC
UT2302
is N-channel Power MOSFET, designed with
high density cell, with fast switching speed, ultra low on-resistance,
and excellent thermal and electrical capabilities.
Used in commercial and industrial surface mount applications
and suited for low voltage applications such as DC/DC converters.
SYMBOL
3.Drain
2.Gate
1.Source
ORDERING INFORMATION
Ordering Number
UT2302G-AE2-R
UT2302G-AE3-R
Pin Assignment: G: Gate
D: Drain
Package
SOT-23-3
SOT-23
S: Source
Pin Assignment
1
2
3
S
G
D
S
G
D
Packing
Tape Reel
Tape Reel
Note:
MARKING
23BG
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 5
QW-R502-114.H
UT2302
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C, unless otherwise specified)
PARAMETER
Power MOSFET
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
20
V
Gate-Source Voltage
V
GSS
±8
V
Continuous
I
D
2.4
A
Drain Current (Note 1)
Pulsed
I
DM
10
A
Power Dissipation
P
D
1.25
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
SYMBOL
θ
JA
RATINGS
100
UNIT
°C/W
PARAMETER
Junction to Ambient (Note 3)
ELECTRICAL CHARACTERISTICS
(Ta =25°C, unless otherwise specified)
SYMBOL
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
TEST CONDITIONS
V
GS
=0 V, I
D
=250 µA
V
DS
=20 V, V
GS
=0 V
V
DS
=0 V, V
GS
= ±8V
V
DS
=V
GS
, I
D
=250 µA
V
GS
=4.5 V, I
D
=7.2 A
V
GS
=2.5 V, I
D
=3.1 A
V
DS
≥
5V, V
GS
=4.5 V
MIN
20
1.0
±100
0.45
75
6
450
70
43
7
55
16
10
5.2
0.65
1.5
0.76
15
80
60
25
10
50
95
TYP
MAX UNIT
V
µA
nA
V
mΩ
mΩ
A
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate-Threshold Voltage
Static Drain-Source On-State Resistance
On State Drain Current (Note2)
I
D(ON)
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
DS
=10 V, V
GS
=0V, f=1MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Turn-ON Delay Time
t
D(ON)
Turn-ON Rise Time
t
R
V
DD
=10V, R =10
Ω,
I
D
=1A,
V
GEN
=4.5V, R
G
=6Ω
Turn-OFF Delay Time
t
D(OFF)
Turn-OFF Fall-Time
t
F
Total Gate Charge
Q
G
V
DS
=10V, V
GS
=4.5 V, I
D
=3.6 A
Gate-Source Charge
Q
GS
Gate-Drain Charge
Q
GD
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
V
SD
V
GS
=0 V, I
S
=1.0 A
Maximum Continuous Drain-Source
I
S
Diode Forward Current
Notes: 1. Repetitive Rating: Pulse width limited by T
J
2. Pulse Test: Pulse width
≤
300μs, Duty cycle
≤
2%
3. Surface mounted on 1 in
2
copper pad of FR4 board
1.2
1.6
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R502-114.H
UT2302
TYPICAL CHARACTERISTICS
Power MOSFET
Drain Current, I
D
(A)
On-Resistance, R
DS(ON)
(Ω)
Capacitance, C (pF)
Drain Current, I
D
(A)
Gate Charge Characteristics
On-Resiistance, R
DS(ON)
(Normalized)
5
Gate-to-Source Voltage, V
GS
(V)
4
3
2
1
0
0
1
2
3
4
5
Total Gate Charge, Qg (nC)
V
DS
= 2.5V
I
D
= 3.6A
1.8
1.6
1.4
1.2
1.0
0.8
0.6
-50
On-Resistance vs. Junction Temperature
V
DS
= 4.5V
I
D
= 3.6A
0
50
100
150
Junction Temperature, T
J
(°C)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 5
QW-R502-114.H
UT2302
TYPICAL CHARACTERISTICS(Cont.)
Power MOSFET
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
10
100
600
Square Wave Pulse Duration (sec)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
On-Resistance, R
DS(on)
(Ω)
Source Current, I
S
(A)
4 of 5
QW-R502-114.H
UT2302
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 5
QW-R502-114.H
51单片机
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
