UNISONIC TECHNOLOGIES CO., LTD
8N80
8A, 800V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
8N80
is an N-channel mode power MOSFET, it uses
UTC’s advanced technology to provide costumers planar stripe and
DMOS technology. This technology allows a minimum on-state
resistance, superior switching performance. It also can withstand high
energy pulse in the avalanche and commutation mode.
The UTC
8N80
is generally applied in high efficiency switch mode
power supplies.
Power MOSFET
FEATURES
* Typically 35 nC Low Gate Charge
* R
DS(ON)
= 1.45Ω @V
GS
= 10V
* Typically 13 pF Low C
RSS
* Improved dv/dt Capability
* Fast Switching Speed
* 100% Avalanche Tested
* RoHS–Compliant Product
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
8N80L-TA3-T
8N80G-TA3-T
8N80L-TF3-T
8N80G-TF3-T
8N80L-TF1-T
8N80G-TF1-T
8N80L-TF2-T
8N80G-TF2-T
Note: Pin Assignment: G: GND, D: Drain, S: Source
Package
TO-220
TO-220F
TO-220F1
TO-220F2
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
Packing
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QW-R502-471.I
8N80
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
800
V
Gate-Source Voltage
V
GSS
±30
V
Drain Current (Continuous) (T
C
=25°C)
I
D
8
A
Drain Current (Pulsed) (Note 1)
I
DM
32
A
Avalanche Current (Note 1)
I
AR
8
A
Single Pulse Avalanche Energy (Note 2)
E
AS
850
mJ
Repetitive Avalanche Energy (Note 1)
E
AR
17.8
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.5
V/ns
TO-220
178
Power Dissipation
TO-220F/TO-220F1
59
W
TO-220F2
62
P
D
TO-220
1.43
Linear Derating Factor above
TO-220F/TO-220F1
0.47
W/°C
T
C
=25°C
TO-220F2
0.5
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 25mH, I
AS
= 8A, V
DD
= 50V, R
G
= 25
Ω,
Starting T
J
= 25°C
3. I
SD
≤
8A, di/dt
≤
200A/µs, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
4. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-220
TO-220F/TO-220F1
TO-220F2
SYMBOL
θ
JA
θ
JC
RATINGS
62.5
0.7
2.1
2.0
UNIT
°C/W
°C/W
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2 of 7
QW-R502-471.I
8N80
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250µA, V
GS
=0V
Breakdown Voltage Temperature Coefficient
△BV
DSS
/△T
J
Reference to 25°C, I
D
=250µA
V
DS
=800V, V
GS
=0V
Drain-Source Leakage Current
I
DSS
V
DS
=640V, T
C
=125°C
Gate- Source Leakage Current
I
GSS
V
GS
=±30V, V
DS
=0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=4A
Forward Transconductance (Note 1)
g
FS
V
DS
=50V, I
D
=4A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
GS
=0V, V
DS
=25V,
Output Capacitance
C
OSS
f=1.0MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
(Note 1, Note 2)
Total Gate Charge
Q
G
V
GS
=10V, V
DS
=640V,
Gate to Source Charge
Q
GS
I
D
=8A
Gate to Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Rise Time
t
R
V
DD
=400V, I
D
=8A,
R
G
=25Ω
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Drain-Source Diode Forward Voltage
V
SD
I
S
=8A, V
GS
=0V
Reverse Recovery Time (Note 1)
t
rr
I
S
=8A, V
GS
=0V,
dI
F
/dt=100A/µs
Reverse Recovery Charge (Note 1)
Q
RR
Note: 1. Pulse Test: Pulse width
≤
300µs, Duty cycle
≤
2%
2. Essentially independent of operating temperature
Power MOSFET
MIN
800
0.5
10
100
±100
3.0
5.0
1.18 1.45
5.6
1580 2050
135 175
13
17
35
10
14
40
110
65
70
45
TYP MAX UNIT
V
V/°C
µA
nA
V
Ω
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
ns
µC
90
230
140
150
8
32
1.4
690
8.2
UNISONIC TECHNOLOGIES CO., LTD
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3 of 7
QW-R502-471.I
8N80
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
DUT
R
G
+
V
DS
L
-
I
SD
V
GS
V
DD
Driver
Same Type
as DUT
dv/dt controlled by R
G
I
SD
controlled by pulse period
Peak Diode Recovery dv/dt Test Circuit & Waveforms
V
GS
(Driver
)
D=
Gate Pulse Width
Gate Pulse Period
10V
I
FM
, Body Diode Forward Current
I
SD
(DUT)
I
RM
Body Diode Reverse Current
V
DS
(DUT)
di/dt
Body Diode Recovery dv/dt
V
SD
V
DD
Body Diode Forward
Voltage Drop
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 7
QW-R502-471.I
8N80
TEST CIRCUITS AND WAVEFORMS(Cont.)
Power MOSFET
Same Type
as DUT
12V
200nF
50kΩ
V
GS
DUT
3mA
300nF
V
DS
V
GS
Q
G
10V
Q
GS
Q
GD
Charge
Gate Charge Test Circuit
Gate Charge Waveforms
Resistive Switching Test Circuit
Resistive Switching Waveforms
V
DS
R
G
I
D
BV
DSS
L
I
AS
E
AS
= 1 LI
AS2
2
BV
DSS
BV
DSS
-V
DD
10V
t
P
DUT
V
DD
V
DD
I
D
(t)
V
DS
(t)
Time
t
P
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-471.I
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