UNISONIC TECHNOLOGIES CO., LTD
UT9435H
P-CHANNEL
ENHANCEMENT MODE
DESCRIPTION
Power MOSFET
The UTC
UT9435H
provide excellent R
DS(ON)
, low gate
charge and fast switching speed. It has been optimized for
power management applications.
SYMBOL
ORDERING INFORMATION
1
G
S
D
S
2
D
G
D
S
Pin Assignment
3 4 5 6
S -
-
-
D -
-
-
G S D D
S G D D
7
-
-
-
D
8
-
-
-
D
Packing
Tape Reel
Tape Reel
Tape Reel
Tape Reel
Ordering Number
Package
Lead Free
Halogen Free
UT9435HL-AA3-R
UT9435HG-AA3-R
SOT-223
UT9435HL-AE3-R
UT9435HG-AE3-R
SOT-23
UT9435HL-AL6-R
UT9435HG-AG6-R
SOT-26
UT9435HL-S08-R
UT9435HG-S08-R
SOP-8
Note: Pin Assignment: G: Gate D: Drain
S: Source
MARKING
SOT-223
SOT-23
SOT-26
6
5
435H
4
L: Lead Free
G: Halogen Free
3
SOP-8
1
2
www.unisonic.com.tw
Copyright © 2017 Unisonic Technologies Co., Ltd
1 of 5
QW-R502-131.H
UT9435H
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C, unless otherwise specified)
SYMBOL
V
DS
V
GS
I
D
I
DM
P
D
0.38
RATING
-30
±20
±5.3
±20
2.5
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 3)
Pulsed Drain Current (Note 1, 2)
Power Dissipation
Power MOSFET
T
A
=125°C
SOT-223
SOP-8
SOT-23
SOT-26
UNITS
V
V
A
A
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATING
50
°C/W
325
UNIT
SOT-223
SOP-8
Junction to Ambient
θ
JA
SOT-23
SOT-26
2
Note: Surface mounted on 1 in copper pad of FR4 board.
ELECTRICAL CHARACTERISTICS
(T
A
=25°C, unless otherwise specified)
SYMBOL
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
TEST CONDITIONS
V
GS
=0 V, I
D
=-250 µA
V
DS
=-24 V, V
GS
=0 V
V
DS
=0 V, V
GS
= ±20V
V
DS
=V
GS
, I
D
=-250 µA
V
GS
=-10V, I
D
=-5.3A
V
GS
=-4.5V, I
D
=-4.2A
V
DS
= -5V, V
GS
=-10V
MIN
-30
-1
±100
-1
44
74
-20
1040
420
150
22.5
2
6
19
9
74
36
-0.84
29
-3
50
90
TYP MAX
UNIT
V
µA
nA
V
mΩ
mΩ
A
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On-State Resistance (Note 2)
On State Drain Current
I
D(ON)
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
DS
=-15V, V
GS
=0V,
Output Capacitance
C
OSS
f=1.0MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge (Note 2)
Q
G
V
DS
=-15V, V
GS
=-10V,
Gate-Source Charge
Q
GS
I
D
=-4.6A
Gate-Drain Charge
Q
GD
Turn-ON Delay Time (Note 2)
t
D(ON)
V
DD
=-15V, I
D
=-1A,
Turn-ON Rise Time
t
R
V
GEN
=-10V, R
G
=6Ω
Turn-OFF Delay Time
t
D(OFF)
Turn-OFF Fall Time
t
F
DRAIN-SOURCE DIODE CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note 2)
V
SD
V
GS
=0V, I
S
=-5.3A
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Pulse width
≤
300us, duty cycle
≤
2%.
26
13
105
50
-1.3
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R502-131.H
UT9435H
TYPICAL CHARACTERISTICS
Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 5
QW-R502-131.H
UT9435H
TYPICAL CHARACTERISTICS (Cont.)
Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 5
QW-R502-131.H
UT9435H
TYPICAL CHARACTERISTICS (Cont.)
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 5
QW-R502-131.H
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
