UNISONIC TECHNOLOGIES CO.,LTD
L8211
FET BIAS CONTROLLER WITH
POLARIZATION SWITCH AND
TONE DETECTION
DESCRIPTION
LINEAR INTEGRATED CIRCUIT
The UTC
L8211
is designed to bias the MOSFETs that are
commonly used in LNBs that can implies minimum external
components requires.
FEATURES
* Three outputs that can drive up to 3 FETs.
* Drain current adjustable by external resistor.
* HB and LB switch for LNBs.
* Band switching by 22kHz tone detection.
ORDERING INFORMATION
Ordering Number
L8211G-R20-R
L8211G-R20-T
Package
SSOP-20
SSOP-20
Packing
Tape Reel
Tube
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co.,LTD
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QW-R123-008.D
L8211
PIN CONFIGURATION
G1
D1
G2
D2
G3
D3
GND
CNB1
CNB2
N/C
1
2
3
4
5
6
7
8
9
10
LINEAR INTEGRATED CIRCUIT
20
19
18
17
16
15
14
13
12
11
V
CC
RCAL
VPOL
FIN
N/C
FOUT
LOV
HB
LB
CSUB
PIN DESCRIPTION
PIN NO.
1
2
3
4
5
6
7
8
9
10, 16
11
12
13
14
15
17
18
19
20
PIN NAME
G1
D1
G2
D2
G3
D3
GND
CNB1
CNB2
N/C
CSUB
LB
HB
LOV
FOUT
FIN
VPOL
RCAL
V
CC
DESCRIPTION
To Gate of FET 1
To Drain of FET 1
To Gate of FET 2
To Drain of FET 2
To Gate of FET 3
To Drain of FET 3
Ground
Connect 47nF capacitance to CNB2
Connect 47nF capacitance to CNB1
Nothing connect
Connect an external 47nF cap to -3V
Low band switch output
High band switch output
LB and HB's switch
Filter output
LNB input
Control input switch
Connect 33kohm to set Id1, Id2 and Id3 to 10mA
Power supply
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QW-R123-008.D
L8211
ABSOLUTE MAXIMUM RATINGS
PARAMETER
LINEAR INTEGRATED CIRCUIT
SYMBOL
RATINGS
UNIT
Supply Voltage
V
CC
-0.6 ~ +12
V
Supply Current
I
CC
100
mA
Input Voltage
V
IN
25 Continuous
V
Drain Current (per FET)(set by R
CAL
)
I
D
0 ~ 15
mA
Power Dissipation(T
A
=25°C)
P
D
600
mW
Operating Temperature
T
OPR
-40~+70
°C
Storage Temperature
T
STG
-50~+85
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
MIN
5
TYP
6
25
25
16
16
-3
MAX
10
15
35
35
25
25
-2.5
-2.4
0.005
0.02
800
UNIT
V
mA
mA
mA
mA
mA
V
V
Vpkpk
Vpkpk
kHz
(T
A
=25°C, V
CC
=5V, I
D
=10mA, R
CAL
=33KΩ, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
Supply Voltage
V
CC
I
D1
to I
D3
=0
I
D1
=0, I
D2
to I
D3
=10mA,V
POL
=14V
Supply Current
I
CC
I
D2
=0, I
D1
to I
D3
=10mA,V
POL
=15.5V
I
D1
to I
D3
=0,I
LB
=10mA
I
D1
to I
D3
=0,I
HB
=10mA
(Internally generated) I
SUB
=0
Substrate Voltage
V
SUB
I
SUB
= -200µA
Gate Voltage
E
NG
C
G
=4.7nF,C
D
=10nF
Output Noise
Drain Voltage
E
ND
C
G
=4.7nF,C
D
=10nF
Oscillator Freq
f
O
-3.5
200
350
GATE CHARACTERISTICS
SYMBOL
I
GO
V
G1O
V
G1L
V
G1H
V
G2O
V
G2L
V
G2H
V
G3L
V
G3H
TEST CONDITIONS
I
D1
=0mA, V
POL
=14V, I
GO1
=0µA
I
D1
=12mA, V
POL
=15.5V, I
GO1
=-10µA
I
D1
=8mA, V
POL
=15.5V, I
GO1
=0µA
I
D2
=0mA, V
POL
=15.5V, I
GO2
=0µA
I
D2
=12mA, V
POL
=14V, I
GO2
=-10µA
I
D2
=8mA, V
POL
=14V, I
GO2
=0µA
I
D3
=12mA, I
GO3
=-10µA
I
D3
=8mA, I
GO3
=0µA
MIN
-30
-0.05
-2.7
0.4
-0.05
-2.7
0.4
-3.5
0.4
TYP
0
-2.4
0.75
0
-2.4
0.75
-2.9
0.75
MAX
2000
0.05
-2
1.0
0.05
-2
1.0
-2
1.0
UNIT
µA
V
V
V
V
PARAMETER
Output Current Range
Off
Output Voltage
Low
Gate 1
High
Off
Output Voltage
Low
Gate 2
High
Output Voltage Low
Gate 3
High
V
DRAIN CHARACTERISTICS
PARAMETER
SYMBOL
I
D
△
I
DV
△
I
DT
V
D1
V
D2
V
D3
△
V
DV
△
V
DT
I
LEAK1
I
LEAK2
TEST CONDITIONS
V
CC
=5 ~ 10V
T
J
=-40 ~ +70°C
I
D1
=10mA,V
POL
=15.5V
I
D2
=10mA,V
POL
=14V
I
D3
=10mA
V
CC
=5 ~ 10V
T
J
=-40 ~ +70°C
V
D1
=0.5V,V
POL
=14V
V
D2
=0.5V,V
POL
=15.5V
MIN
8
TYP
10
0.5
0.05
2
2
2
0.5
50
MAX
12
UNIT
mA
%/V
%/°C
V
V
V
%/V
ppm
µA
µA
Current
With V
CC
With T
J
Drain 1 Voltage: High
Drain 2 Voltage: High
Drain 3 Voltage: High
With V
CC
Voltage Change
With T
J
Drain 1
Leakage Current
Drain 2
Current Change
1.8
1.8
1.8
2.2
2.2
2.2
10
10
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L8211
TONE DETECTION CHARACTERISTICS
SYMBOL
I
B
V
OUT
I
OUT
Gv
f
R
F
VT
V
LOV
I
LOV
PARAMETER
Filter Amplifier
Input Bias Current
Output Voltage
Output Current
Voltage Gain
Rejection Frequency
V Threshold
Output Stage
Lov Volt.Range
Lov Bias Current
LINEAR INTEGRATED CIRCUIT
TEST CONDITIONS
R
F1
=150kΩ
R
F1
=150kΩ
V
OUT
=1.96V, V
FIN
=2.1V
f=22kHz, V
IN
=1mV
V
(AC)IN
=1V p/p sq.w
MIN
0.02
1.75
400
1.0
100
-0.5
0.02
-3.5
-0.01
-0.025
2.9
-3.5
-0.01
-0.025
2.9
TYP
0.07
1.95
520
46
7.5
MAX
0.25
2.05
650
UNIT
µA
V
µA
dB
kHz
mV p/p
V
µA
V
V
V
V
V
V
V
V
350
V
CC
-1.8
0.15
1
-2.75
-2.5
0
0.01
0
0.025
3
3.1
-2.75
-2.5
0
0.01
0
0.025
3
3.1
I
L
=50mA(LB or HB)
V
LOV
=0V
V
LOV
=0V, I
L
=-10µA
LB Output Low
V
LBL
V
LOV
=3V, I
L
=0mA
V
LOV
=0V, I
L
=10 mA
LB Output High
V
LBH
V
LOV
=3V, I
L
=50mA
V
LOV
=0V, I
L
=-10µA
HB Output Low
V
HBL
V
LOV
=3V, I
L
=0mA
V
LOV
=0V, I
L
=10mA
HB Output High
V
HBH
V
LOV
=3V, I
L
=50mA
Note: Noise voltage measurement would be ignored in production.
Enable
Enable
Disable
Disable
Disable
Disable
Enable
Enable
POLARITY SWITCH CHARACTERISTICS
SYMBOL
I
POL
V
TPOL
T
SPOL
TEST CONDITION
V
POL
=25V (Applied via R
POL
=10kΩ)
V
POL
=25V (Applied via R
POL
=10kΩ)
V
POL
=25V (Applied via R
POL
=10kΩ)
MIN.
10
14
TYP.
20
14.75
MAX.
40
15.5
100
UNIT
µA
V
ms
PARAMETER
Input Current
Threshold Voltage
Switching Speed
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QW-R123-008.D
L8211
TYPICAL CHARACTERISTICS
JFET Drain Voltage vs Drain Current
16
2.2
14
12
10
2.1
8
6
2.0
10V
8V
5V
1.9
2
4
6
8
10
12
Drain Current (mA)
14
16
2
0
4
LINEAR INTEGRATED CIRCUIT
JFET Drain Current vs Rcal
V
CC
=5V
0
20
40
60
Rcal (k)
80
100
LB/HB Offset Voltage vs Load Current
2.0
4
2
0
-2
-4
-6
-8 V
CC
=5V
V
LOV
=0V
0
10
20
30
Load Current (mA)
40
50
Ta=70°C
Ta=25°C
Ta= -40°C
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
LB/HB Dropout Voltage vs Load Current
Ta= -40°C
Ta=25°C
Ta=70°C
V
CC
=5V
0
10
20
30
Load Current (mA)
40
50
Open Loop Gain vs Frequency
70
60
50
40
30
20
10
0
V
CC
=5V
100
1k
10k
100k
1M
10M
Frequency (Hz)
180
150
120
90
60
30
0
V
CC
=5V
100
Open Loop Phase vs Frequency
1k
10k
100k
1M
10M
Frequency (Hz)
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QW-R123-008.D
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