UNISONIC TECHNOLOGIES CO., LTD
1N65
1.2A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
1
TO-220
1
TO-220F
1
SOT-223
Power MOSFET
1
TO-92
The UTC
1N65
is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and high rugged
avalanche characteristics. This power MOSFET is usually used in
the high speed switching applications of power supplies, PWM
motor controls, high efficient DC to DC converters and bridge
circuits.
1
TO-251
1
TO-251L
FEATURES
1
TO-252
1
DFN5060-8
1
TO-126
* R
DS(ON)
<12.5Ω @ V
GS
=10V, I
D
=0.6A
* Ultra Low gate charge (typical 5.0nC)
* Low reverse transfer capacitance (C
RSS
= typical 3.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
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QW-R502-579.F
1N65
ORDERING INFORMATION
1
G
G
G
G
G
G
G
G
G
S
2
D
D
D
D
D
D
D
D
D
S
Ordering Number
Package
Lead Free
Halogen Free
1N65L-AA3-R
1N65G-AA3-R
SOT-223
1N65L-TA3-T
1N65G-TA3-T
TO-220
1N65L-TF3-T
1N65G-TF3-T
TO-220F
1N65L-TM3-T
1N65G-TM3-T
TO-251
1N65L-TMA-T
1N65G-TMA-T
TO-251L
1N65L-TN3-R
1N65G-TN3-R
TO-252
1N65L-T60-K
1N65G-T60-K
TO-126
1N65L-T92-B
1N65G-T92-B
TO-92
1N65L-T92-K
1N65G-T92-K
TO-92
1N65L-K08-5060-R
1N65G-K08-5060-R
DFN5060-8
Note: Pin Assignment: G: Gate D: Drain S: Source
Power MOSFET
Pin Assignment
3 4 5 6 7
S -
-
-
-
S -
-
-
-
S -
-
-
-
S -
-
-
-
S -
-
-
-
S -
-
-
-
S -
-
-
-
S -
-
-
-
S -
-
-
-
S G D D D
8
-
-
-
-
-
-
-
-
-
D
Packing
Tape Reel
Tube
Tube
Tube
Tube
Tape Reel
Bulk
Tape Box
Bulk
Tape Reel
MARKING
PACKAGE
MARKING
SOT-223
TO-220
TO-220F
TO-251
TO-251L
TO-252
TO-126
TO-92
DFN5060-8
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QW-R502-579.F
1N65
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
650
V
Gate-Source Voltage
V
GSS
±30
V
Avalanche Current (Note 2)
I
AR
1.2
A
Continuous Drain Current
I
D
1.2
A
Pulsed Drain Current (Note 2)
I
DM
4.8
A
Single Pulsed (Note 3)
E
AS
50
mJ
Avalanche Energy
4.0
mJ
Repetitive (Note 2)
E
AR
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
SOT-223
8
W
TO-251/TO-251L
28
W
TO-252
TO-220
40
W
Power Dissipation
P
D
TO-220F
21
W
TO-92 (T
A
=25°C)
1
W
TO-126
12.5
W
DFN5060-8
14
W
Junction Temperature
T
J
+150
°C
Operating Temperature
T
OPR
-55 ~ +150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 60mH, I
AS
= 1A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25°C
4. I
SD
≤
1.2A, di/dt
≤
200A/μs, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
SYMBOL
RATINGS
150
62.5
4.53
140
132
75
14
3.13
5.95
θ
JC
4.53
80
10
8.9
°C/W
UNIT
PARAMETER
SOT-223
TO-220/TO-220F
TO-251/TO-251L
Junction to Ambient TO-252
TO-92
TO-126
DFN5060-8
SOT-223
TO-220
TO-220F
TO-251/TO-251L
Junction to Case
TO-252
TO-92
TO-126
DFN5060-8
θ
JA
°C/W
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QW-R502-579.F
1N65
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified.)
SYMBOL
BV
DSS
I
DSS
TEST CONDITIONS
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Power MOSFET
MIN TYP MAX UNIT
650
V
10
μA
100 nA
-100 nA
V/°C
4.0
12.5
150
25
4.0
6.0
V
Ω
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
ns
μC
Forward
Reverse
Breakdown Voltage Temperature Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250μA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=0.6A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
V
DS
=25V, V
GS
=0V,
Output Capacitance
C
OSS
f=1MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Total Gate Charge
Q
G
V
DS
=520V, V
GS
=10V,
Gate-Source Charge
Q
GS
I
D
=1.2A (Note 2,3)
Gate-Drain Charge
Q
GD
Turn-On Delay Time
t
D(ON)
Turn-On Rise Time
t
R
V
DD
=325V, I
D
=1.2A,
R
G
=50Ω (Note 2,3)
Turn-Off Delay Time
t
D(OFF)
Turn-Off Fall Time
t
F
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Drain-Source Diode Forward Voltage
V
SD
V
GS
=0V, I
S
=1.2A
Reverse Recovery Time
t
rr
V
GS
=0V, I
S
=1.2A
dI
F
/dt=100A/μs (Note 1)
Reverse Recovery Charge
Q
rr
Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. Pulse Test: Pulse Width
≤300μs,
Duty Cycle≤2%
3. Essentially Independent of Operating Temperature
V
GS
=0V, I
D
=250μA
V
DS
=650V, V
GS
=0V
V
GS
=30V, V
DS
=0V
I
GSS
V
GS
=-30V, V
DS
=0V
△
BV
DSS
/
△
T
J
I
D
=250μA
0.4
2.0
9.5
120
20
3.0
5.0
1.0
2.6
5
25
7
25
20
60
25
60
1.2
4.8
1.4
160
0.3
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4 of 7
QW-R502-579.F
1N65
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
V
DS
-
+
-
L
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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QW-R502-579.F
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