UNISONIC TECHNOLOGIES CO., LTD
UK3018
2.5V DRIVE SILICON
N-CHANNEL MOSFET
DESCRIPTION
The UTC
UK3018
is a Silicon N-channel MOSFET, designed to
minimize on-state resistance while it provides
rugged, reliable and
fast switching performance. The product is particularly suited for low
voltage and low current applications such as small servo motor
controllers, power MOSFET gate drivers, and other switching
applications.
Preliminary
Power MOSFET
FEATURES
* Min V
DSS
=30V
* R
DS(ON)
=5Ω(V
GS
=4V)
* R
DS(ON)
=7Ω(V
GS
=2.5V)
* Pulsed ID=400mA
* Low voltage drive (2.5V)
* Halogen Free
SYMBOL
ORDERING INFORMATION
Ordering Number
UK3018G-AE2-R
UK3018G-AL3-R
Package
SOT-23-3
SOT-323
1
S
S
Pin Assignment
2
G
G
3
D
D
Packing
Tape Reel
Tape Reel
MARKING
3018G
www.unisonic.com.tw
Copyright © 2009 Unisonic Technologies Co., LTD
1 of 3
QW-R502-313.b
UK3018
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATING
(Ta=25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
30
V
Gate-Source Voltage
V
GSS
±20
V
Continuous
I
D
100
mA
Drain Current
Pulsed (Note 2)
I
DP
400
mA
Power Dissipation (Note 3)
P
D
200
mW
Junction Temperature
T
J
+150
°С
Storage Temperature
T
STG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pw≤10µs, Duty cycle≤1%
3. With each pin mounted on the recommended lands.
THERMAL RESISTANCE
PARAMETER
Junction to Ambient
SYMBOL
θ
JA
RATINGS
625
UNIT
°С/W
ELECTRICAL CHARACTERISTICS
(Ta=25°С, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Static drain-source on-state resistance
DYNAMIC PARAMETERS
Input capacitance
Output capacitance
Reverse transfer capacitance
SWITCHING PARAMETERS
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall-Time
SYMBOL
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
C
ISS
C
OSS
C
RSS
t
D(ON)
t
R
t
D(OFF)
t
F
TEST CONDITIONS
V
GS
=0V, I
D
=10μA
V
DS
=30V, V
GS
=0V
V
DS
=0V, V
GS
=±20V,
V
DS
=3V, I
D
=100μA
V
GS
=4V, I
D
=10mA,
V
GS
=2.5V, I
D
=1mA,
MIN
30
1
±1
0.8
5
7
13
9
4
15
35
80
80
1.5
8
13
TYP MAX UNIT
V
µA
µA
V
Ω
Ω
pF
pF
pF
ns
ns
ns
ns
V
DS
= 5V, V
GS
= 0V, f = 1MHz
V
GS
= 5V, V
DD
≈5V
I
D
= 10mA, R
L
= 500Ω, R
G
= 10Ω
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R502-313.b
UK3018
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Pulse Width
90%
V
GS
R
G
I
D
D.U.T
R
L
V
DS
V
GS
V
DS
50%
10%
10%
50%
10%
90%
t
D(OFF)
t
F
t
OFF
V
DD
t
D(ON)
t
R
t
ON
90%
Switching Time Measurement Circuit
Switching Time Waveforms
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 3
QW-R502-313.b
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
