UNISONIC TECHNOLOGIES CO., LTD
2SC2712
AUDIO FREQUENCY
AMPLIFIER NPN TRANSISTOR
FEATURES
NPN SILICON TRANSISTOR
* High Voltage and High Current:
V
CEO
=50V, I
C
=150mA (Max.)
* Excellent h
FE
Linearity:
h
FE
(I
C
=0.1mA)/h
FE
(I
C
=2mA)=0.95(Typ.)
* High h
FE
* Low Noise
ORDERING INFORMATION
Ordering Number
Halogen Free
2SC2712G-x-AE3-R
2SC2712G-x-AL3-R
2SC2712G-x-T92-R
B: Base
C: Collector
Package
SOT-23
SOT-323
TO-92
Pin Assignment
1
2
3
E
B
C
E
B
C
E
C
B
Packing
Tape Reel
Tape Reel
Tape Reel
Lead Free
-
-
2SC2712L-x-T92-R
Note: Pin assignment: E: Emitter
MARKING
2SC2712-G
LGG
2SC2712-L
LLG
For SOT-23/SOT-323
2SC2712-Y
LYG
For TO-92
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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2SC2712
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°С, unless otherwise stated)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V
CBO
60
V
Collector-Emitter Voltage
V
CEO
50
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
I
C
150
mA
Base Current
I
B
30
mA
SOT-23/SOT-323
150
mW
Collector Power Dissipation
P
C
TO-92
625
mW
Junction Temperature
T
J
+125
°С
Storage Temperature
T
STG
-55 ~ +125
°С
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
A
=25°С, unless otherwise stated)
SYMBOL
I
CBO
I
EBO
h
FE
V
CE(SAT)
f
T
C
ob
NF
TEST CONDITIONS
V
CB
=60V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=6V, I
C
=2mA
I
C
=100mA, I
B
=10mA
V
CE
=10V, I
C
=1mA
V
CB
=10V, I
E
=0, f=1MHz
V
CE
=6V, I
C
=0.1mA
f=1kHz, Rg=10KΩ
MIN
TYP
MAX
0.1
0.1
700
0.25
3.5
10
UNIT
μA
μA
V
MHz
pF
dB
PARAMETER
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transistor Frequency
Collector Output Capacitance
Noise Figure
70
0.1
80
2.0
1.0
CLASSIFICATION OF h
FE
RANK
RANGE
Y
120~240
G
200~400
L
350~700
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-029.G
2SC2712
TYPICAL CHARACTERISTICS
NPN SILICON TRANSISTOR
Collector Current, I
C
(mA)
DC Current Gain, h
FE
3000
1000
500
300
100
50
30
f
T
- I
C
Common Emitter
V
CE
=10V
T
A
=25°С
3000
I
B
- V
BE
Common Emitter
1000 V
CE
=10V
500
300
100
50
30
10
5
3
1
0.5
0.3
0
T
A
=100°С
25°С
-25°С
10
0.1 0.3
3
10 30 100 300
1
Collector Current, I
C
(mA)
h Parameter, I
C
Common Emitter
BL V
CE
=12V, f=270Hz, T
A
=25°С
GR
Y
O BL
h
ie
×KΩ
Y
GR
BL
O
Y
GR
h
oe
×µS
O
0.2 0.4
0.6 0.8 1.0 1.2
Base-Emitter Voltage, V
BE
(V)
2000
1000
500
300
h Parameter
100
50
30
10
5
3
1
0.5
0.3
0.1
0.1
h Parameter, V
CE
2000 Common Emitter
1000 I =2mA, T =25°С, f=270Hz
A
500
C
300
h Parameter
100
50
30
10
BL
5
3 GR
1 Y
0.5 O
0.3
O Y GR
BL
h
ie
×KΩ
BL
GR h
re
Y
O
h
oe
×µS
BL
GR
Y
h
re
×10
-4
O
Y BL GR h ×10-
4
re
O
0.3
1
3
10
30
Collector Current, I
C
(mA)
0.1
100 300
0.5 1
3
10
30
Collector-Emitter Voltage, V
CE
(V)
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TYPICAL CHARACTERISTICS(Cont.)
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
Collector Power Dissipation, P
C
(mW)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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