UNISONIC TECHNOLOGIES CO., LTD
12N80
12A, 800V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
12N80
is an N-channel enhancement mode power
MOSFET using UTC’s advanced technology to provide customers
with planar stripe and DMOS technology. This technology is
specialized in allowing a minimum on-state resistance and superior
switching performance. It also can withstand high energy pulse in
the avalanche and commutation mode.
The UTC
12N80
is universally applied in high efficiency switch
mode power supply.
Power MOSFET
FEATURES
* R
DS(on)
< 1.0
Ω
@ V
GS
=10V
* High switching speed
* Improved dv/dt capability
* 100% avalanche tested
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
12N80L-T47-T
12N80G-T47-T
12N80L-T3P-T
12N80G-T3P-T
12N80L-TC3-T
12N80G-TC3-T
12N80L-TF2-T
12N80G-TF2-T
Note: Pin Assignment: G: Gate D: Drain
S: Source
Package
TO-247
TO-3P
TO-230
TO-220F2
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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QW-R502-594.G
12N80
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
800
V
Gate-Source Voltage
V
GSS
±30
V
I
D
12
A
Continuous (T
C
=25°C)
Drain Current
Pulsed (Note 2)
I
DM
48
A
Avalanche Current (Note 2)
I
AR
12
A
TO-247
360
W
TO-3P
390
W
Power Dissipation
P
D
TO-230
167
W
TO-220F2
51
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
THERMAL DATA
PARAMETER
TO-247
Junction to Ambient
TO-3P
TO-220F2/TO-230
TO-247
TO-3P
Junction to Case
TO-230
TO-220F2
SYMBOL
θ
JA
RATINGS
50
40
62.5
0.35
0.32
0.75
2.43
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
θ
JC
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QW-R502-594.G
12N80
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250µA, V
GS
=0V
Breakdown Voltage Temperature Coefficient
△
BV
DSS
/
△
T
J
I
D
=250µA, Referenced to 25°C
V
DS
=800V, V
GS
=0V
Drain-Source Leakage Current
I
DSS
V
DS
=640V, T
C
=125°C
Forward
V
GS
=+30V, V
DS
=0V
Gate- Source Leakage Current
I
GSS
Reverse
V
GS
=-30V, V
DS
=0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=6A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
GS
=0V, V
DS
=25V, f=1.0MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
GS
=10V, V
DS
=640V, I
D
=12A
Gate to Source Charge
Q
GS
(Note 1, 2)
Gate to Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Rise Time
t
R
V
DD
=400V, I
D
=12A, R
G
=25Ω
(Note 1, 2)
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
Maximum Body-Diode Pulsed Current
I
SM
Drain-Source Diode Forward Voltage
V
SD
I
S
=12A, V
GS
=0V
Body Diode Reverse Recovery Time
t
rr
V
GS
=0V, I
S
=12A, dI
F
/dt=100A/µs
(Note 1)
Body Diode Reverse Recovery Charge
Q
RR
Note: 1. Pulse Test: Pulse width
≤
300µs, Duty cycle
≤
2%
2. Essentially independent of operating temperature
Power MOSFET
MIN TYP MAX UNIT
800
1.0
10
100
100
-100
3.0
0.75
4200
315
90
123
27
49
100
198
340
180
155
45
80
120
220
360
200
12
48
1.4
1000
17.0
5.0
1.0
V
V/°C
µA
nA
nA
V
Ω
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
ns
µC
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QW-R502-594.G
12N80
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
Same Type
as DUT
12V
200nF
50kΩ
V
GS
DUT
3mA
300nF
V
DS
V
GS
Q
G
10V
Q
GS
Q
GD
Charge
Gate Charge Test Circuit
Gate Charge Waveforms
Resistive Switching Test Circuit
Resistive Switching Waveforms
V
DS
R
G
I
D
BV
DSS
L
I
AS
E
AS
= 1 LI
AS2
2
BV
DSS
BV
DSS
-V
DD
10V
t
P
DUT
V
DD
V
DD
I
D
(t)
V
DS
(t)
Time
t
P
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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QW-R502-594.G
12N80
TEST CIRCUITS AND WAVEFORMS(Cont.)
Power MOSFET
DUT
R
G
+
V
DS
L
-
I
SD
V
GS
V
DD
Driver
Same Type
as DUT
dv/dt controlled by R
G
I
SD
controlled by pulse period
Peak Diode Recovery dv/dt Test Circuit & Waveforms
V
GS
(Driver
)
D=
Gate Pulse Width
Gate Pulse Period
10V
I
FM
, Body Diode Forward Current
I
SD
(DUT)
I
RM
Body Diode Reverse Current
V
DS
(DUT)
di/dt
Body Diode Recovery dv/dt
V
SD
V
DD
Body Diode Forward
Voltage Drop
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QW-R502-594.G
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