UNISONIC TECHNOLOGIES CO., LTD
2SK508
HIGH FREQUENCY AMPLIFIER
N-CHANNEL SILICON
JUNCTION FIELD EFFECT
TRANSISTOR
DESCRIPTION
N-CHANNEL JFET
3
2
1
SOT-23
(JEDEC TO-236)
The UTC
2SK508
is NPN transistor with High forward transfer
admittance and low input capacitance.
It is suitable for cordless telephone, AM tuner and wireless
installation, etc.
FEATURES
* High forward transfer admittance
* Low input capacitance
ORDERING INFORMATION
Ordering Number
Package
SOT-23
G: Gate
Pin Assignment
1
2
3
D
S
G
Packing
Tape Reel
2SK508G-x-AE3-R
Note: Pin Assignment: D: Drain
S: Source
MARKING
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QW-R206-101.C
2SK508
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C, unless otherwise specified)
N-CHANNEL JFET
PARAMETER
SYMBOL
RATINGS
UNIT
Gate to Drain Voltage
V
GDO
-15
V
Gate to Source Voltage
V
GSO
-15
V
Drain to Source Voltage (V
GS
=-4.0 V)
V
DSX
15
V
Drain Current (DC)
I
D
50
mA
Gate Current (DC)
I
G
5
mA
Power Dissipation
P
D
200
mW
Junction Temperature
T
J
150
°C
Storage Temperature
T
STG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
A
=25°C, unless otherwise specified)
SYMBOL
I
GSS
I
DSS
V
GS(off)
|y
FS
|1
|y
FS
|2
C
ISS
C
RSS
TEST CONDITIONS
V
GS
=-10V, V
DS
=0V
V
DS
=5.0V, V
GS
=0V
V
DS
=5.0V, I
D
=10μA
V
DS
=5.0V, I
D
=10mA, f=1.0kHz
V
DS
=5.0V, V
GS
=0V, f=1.0kHz
V
DS
=5.0V, I
D
=10mA, f=1.0MHz
V
DS
=5.0V, I
D
=10mA, f=1.0MHz
MIN
10
-0.6
14
14
TYP MAX UNIT
-1.0 nA
20
50
mA
-1.4 -3.5
V
19
mS
26
mS
4.8
pF
1.6
pF
PARAMETER
Gate Cut-Off Current
Zero Gate Voltage Drain Current (Note)
Gate to Source Cut-Off Voltage
Forward Transfer Admittance (Note)
Input Capacitance
Feedback Capacitance
Note: Pulsed: P
W
≤1ms,
Duty Cycle≤1%.
I
DSS
CLASSIFICATION
MARKING
I
DSS
(mA)
K51
10 ~ 20
K52
15 ~ 30
K53
25 ~ 50
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-101.C
2SK508
N-CHANNEL JFET
TYPICAL CHARACTERISTICS
Drain Current vs. Gate-Source Voltage
14
V
GS
=-4V
12
Drain Current, I
D
(uA)
Drain Current, I
D
(mA)
10
8
6
4
2
0
35
30
25
20
15
10
5
0
5
10
15
20
25
Gate-Source Voltage, V
DSX
(V)
30
0
0
Drain Current vs. Drain-Source Voltage
V
GS
=0V
V
GS
=-0.2V
V
GS
=-0.4V
V
GS
=-0.6V
V
GS
=-0.8V
V
GS
=-1.0V
5
10
15
Drain-Source Voltage, V
DS
(V)
20
Power Dissipation vs. Ambient Temperature
300
Power Dissipation, P
D
(mW)
250
200
150
100
50
0
0
25
50
75
100
125
150
175
Ambient Temperature, T
A
(°C)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-101.C
嵌入式系统
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