UNISONIC TECHNOLOGIES CO., LTD
2SC5353
HIGH VOLTAGE NPN
TRANSISTOR
DESCRIPTION
Switching Regulator and High Voltage Switching Applications
High-Speed DC-DC Converter Applications
1
TO-220
1
TO-220F
NPN SILICON TRANSISTOR
1
TO-126
1
TO-126C
FEATURES
* Excellent switching times: t
R
= 0.7μs
(MAX)
, t
F
= 0.5μs
(MAX)
* High collectors breakdown voltage: V
CEO
= 700V
1
TO-220F1
ORDERING INFORMATION
Package
TO-126
TO-126C
TO-220
TO-220F1
TO-220F
Pin Assignment
1
2
3
B
C
E
B
C
E
B
C
E
B
C
E
B
C
E
Packing
Bulk
Bulk
Tube
Tube
Tube
Ordering Number
Lead Free
Halogen Free
2SC5353L-T60-K
2SC5353G-T60-K
2SC5353L-T6C-K
2SC5353G-T6C-K
2SC5353L-TA3-T
2SC5353G-TA3-T
2SC5353L-TF1-T
2SC5353G-TF1-T
2SC5353L-TF3-T
2SC5353G-TF3-T
Note: Pin Assignment: B: Base C: Collector
E: Emitter
MARKING
TO-126 / TO-126C
TO-220 / TO-220F / TO-220F1
www.unisonic.com.tw
Copyright © 2018 Unisonic Technologies Co., Ltd
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ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C)
NPN SILICON TRANSISTOR
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V
CBO
900
V
Collector-Emitter Voltage
V
CEO
700
V
Emitter-Base Voltage
V
EBO
7
V
DC
I
C
3
A
Collector Current
5
Pulse
I
CP
Base Current
I
B
1
A
TO-220F/ TO-220F1
20
Collector Power Dissipation TO-126/TO-126C
P
D
W
TO-220
25
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(Tc=25°C)
SYMBOL
BV
CBO
BV
CEO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE(SAT)
V
BE(SAT)
TEST CONDITIONS
I
C
=1 mA, I
E
= 0
I
C
=10 mA, I
B
= 0
V
CB
=720V, I
E
= 0
V
EB
=7V, I
C
= 0
V
CE
=5 V, I
C
=1 mA
V
CE
=5 V, I
C
=0.15 A
I
C
=1.2 A, I
B
=0.24 A
I
C
=1.2 A, I
B
=0.24 A
MIN
900
700
TYP
MAX UNIT
V
V
100
µA
10
µA
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
10
15
1.0
1.3
V
V
Storage Time
t
STG
I
B2
Switching Time
I
B1
300Ω
Rise Time
t
R
0.7
µS
4.0
Fall Time
Collector Output Capacitance
t
F
C
ob
V
CB
= 0V, f=1MHz
V
CB
= 10V, f=1MHz
86
23.5
0.5
pF
pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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TYPICAL CHARACTERISTICS
NPN SILICON TRANSISTOR
Collector Current, I
C
(A)
Collector Current, I
C
(A)
DC Current Gain vs. Collector Current
Collector-Emitter Saturation Voltage,
V
CE (SAT)
(V)
1000
10
Collector-Emitter Saturation Voltage vs.
Collector Current
Common emitter
I
C
/I
B
= 3
DC Current Gain, h
FE
100
T
C
=100℃
25
10
-20
Common emitter
V
CE
= 5 V
0.01
0.1
1
Collector Current, I
C
(A)
10
1
T
C
=100℃
25
-20
0.1
1
Collector Current, I
C
(A)
10
0.1
1
0.001
0.05
0.01
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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TYPICAL CHARACTERISTICS(Cont.)
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all UTC products described or contained herein.
UTC products are not designed for use in life support appliances, devices or systems where malfunction
of these products can be reasonably expected to result in personal injury. Reproduction in whole or in
part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to
make changes to information published in this document, including without limitation specifications and
product descriptions, at any time and without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Collector Power Dissipation, P
D
(W)
Collector Current, I
C
(A)
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