UNISONIC TECHNOLOGIES CO., LTD
UT3401
P-CHANNEL ENHANCEMENT
MODE
DESCRIPTION
Power MOSFET
The UTC
UT3401
is P-channel enhancement mode Power
MOSFET, designed with high density cell, with fast switching speed,
low on-resistance, excellent thermal and electrical capabilities and
operation with low gate voltages.
This device is suitable for use as a load switch or in PWM
applications.
SYMBOL
3.Drain
2.Gate
1.Source
ORDERING INFORMATION
Ordering Number
Package
SOT-23
S: Source
Pin Assignment
1
2
3
S
G
D
Packing
Tape Reel
Note:
UT3401G-AE3-R
Pin Assignment: G: Gate
D: Drain
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 5
QW-R502-109.F
UT3401
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
-30
V
Gate-Source Voltage
V
GSS
±12
V
Continuous Drain Current (Note 1)
I
D
-4.2
A
Pulsed Drain Current (Note 2)
I
DM
-30
A
Power Dissipation (Note 1)
P
D
1.4
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
SYMBOL
θ
JA
MIN
TYP
65
MAX
90
UNIT
°C/W
PARAMETER
Junction-to-Ambient
ELECTRICAL CHARACTERISTICS
(T
A
=25°C, unless otherwise specified)
SYMBOL
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
TEST CONDITIONS
I
D
=-250μA, V
GS
=0V
V
DS
=-24V, V
GS
=0V
V
DS
=0V, V
GS
=±12V
V
DS
=V
GS
, I
D
=-250μA
V
GS
=-10V, I
D
=-4.2A
V
GS
=-4.5V, I
D
=-4A
V
GS
=-2.5V, I
D
=-1A
MIN
-30
-1
±100
-0.7
-1
42
53
80
954
115
77
6.3
3.2
38.2
12
9.4
2
3
-0.75
-1
-2.2
20.2
11.2
-1.3
50
65
120
TYP
MAX UNIT
V
µA
nA
V
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
ns
nC
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On-State Resistance (Note 2)
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
GS
=0V, V
DS
=-15V, f=1MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Turn-ON Delay Time (Note 2)
t
D(ON)
Turn-ON Rise Time
t
R
V
GS
=-10V, V
DS
=-15V
R
L
=3.6Ω, R
G
=6Ω
Turn-OFF Delay Time
t
D(OFF)
Turn-OFF Fall Time
t
F
Total Gate Charge (Note 2)
Q
G
V
GS
=-4.5V, V
DS
=-15V, I
D
=-4A
Gate-Source Charge
Q
GS
Gate-Drain Charge
Q
GD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note2)
V
SD
V
DS
=0V, I
S
=-1A
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Reverse Recovery Time
t
RR
I
F
=-4A, dI/dt=100A/μs
Reverse Recovery Charge
Q
RR
Notes: 1. Pulse width limited by T
J(MAX)
2. Pulse width
≤300µs,
duty cycle
≤2%
3. Surface mounted on 1 in
2
copper pad of FR4 board
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R502-109.F
UT3401
TYPICAL CHARACTERISTICS
Power MOSFET
Continuous Drain Current, I
D
(A)
Continuous Drain Current, I
D
(A)
120
100
80
60
40
On-Resistance vs.
Drain Current and Gate Voltage
On-Resistance vs.
Junction Temperature
1.8
1.6
I
D
=-3.5A, V
GS
=-10V
V
GS
= -2.5V
V
GS
= -4.5V
1.4
1.2
1
V
GS
=-2.5V
I
D
=-1A
V
GS
= 10V
20
0.00
0.8
2.00
4.00
6.00
8.00
10.00
0
25
50
75
100
125
150 175
Drain Current , I
D
(A)
Temperature (°C)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 5
QW-R502-109.F
UT3401
TYPICAL CHARACTERISTICS(Cont.)
Power MOSFET
Gate-Source Voltage, -V
GS
(V)
Continuous Drain Current, -I
D
(A)
Capacitance (pF)
10
Normalized Transient Thermal
Resistance, Z
θ
JA
Normalized Maximum Transient Thermal
Impedance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=90°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01,
single pulse
1
0.1
P
D
T
on
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Power (W)
4 of 5
QW-R502-109.F
UT3401
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 5
QW-R502-109.F
51单片机
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
