UNISONIC TECHNOLOGIES CO., LTD
2SA2016
PNP EPITAXIAL PLANAR
TRANSISTOR
APPLICATIONS
PNP PLANAR TRANSISTOR
* Relay drivers, lamp drivers, motor drivers, strobes.
FEATURES
*High current capacitance.
*Low collector-to-emitter saturation voltage.
*High-speed switching
*High allowable power dissipation.
ORDERING INFORMATION
Order Number
Halogen Free
2SA2016G-AB3-R
2SA2016G-TN3-R
C: Collector
E: Emitter
Package
SOT-89
TO-252
Pin Assignment
1
2
3
B
C
E
B
C
E
Packing
Tape Reel
Tape Reel
Lead Free
-
2SA2016L-TN3-R
Note: Pin Assignment: B: Base
MARKING
SOT-89
Date Code
TO-252
2SA2016G
1
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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QW-R208-018.E
2SA2016
PNP PLANAR TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C, unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V
CBO
-50
V
Collector-Emitter Voltage
V
CEO
-50
V
Emitter-Base Voltage
V
EBO
-6
V
Collector Dissipation Mounted on a SOT-89
1.3
W
P
C
2
ceramic board (250mm *0.8mm)
TO-252
1.9
W
SOT-89
3.5
W
Collector Dissipation (T
C
=25C)
P
C
TO-252
15
W
Collector Current
I
C
-7
A
Collector Current
I
CP
-10
A
Base Current
I
B
-1.2
A
Junction Temperature
T
J
150
C
Storage Temperature
T
STG
-55 ~ +150
C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL RESISTANCES CHARACTERISTICS
PARAMETER
SYMBOL
SOT-89
TO-252
SOT-89
TO-252
θ
JA
θ
JC
RATINGS
96.2
65.8
35.7
8.3
UNIT
°C/W
°C/W
°C/W
°C/W
Junction to Ambient
Junction to Case
ELECTRICAL CHARACTERISTICS
(T
A
=25°C, unless otherwise noted)
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(SAT)
V
BE(SAT)
f
T
Cob
t
ON
t
STG
t
F
TEST CONDITIONS
I
C
= -10µA, I
E
=0
I
C
= -1mA, R
BE
=∞
I
C
=0, I
E
= -10µA
V
CB
= -40V, I
E
=0
V
EB
= -4V, I
C
=0
V
CE
= -2V, I
C
= -500mA
I
C
= -3.5A, I
B
= -175mA
I
C
= -2A, I
B
= -40mA
I
C
= -2A, I
B
= -40mA
V
CE
= -10V, I
C
= -500mA
V
CB
= -10V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
MIN
-50
-50
-6
TYP MAX UNIT
V
V
V
-0.1 µA
-0.1 µA
200
560
-0.23 -0.39 V
-0.24 -0.40 V
-0.83 -1.2
V
290
MHz
50
pF
40
ns
225
ns
25
ns
PARAMETER
Collector-to-Base Breakdown Voltage
Collector-to- Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Gain Bandwidth Product
Output Capacitance
Turn-on Time
Storage Time
Fall Time
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R208-018.E
2SA2016
TYPICAL CHARACTERISTICS(Cont.)
PNP PLANAR TRANSISTOR
Collector Current Ic -A
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Collector-to-Emitter Saturation
Voltage, V
CE(SAT)
-mV
DC Current Gain, h
FE
Collector Current ,Ic -A
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QW-R208-018.E
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