UNISONIC TECHNOLOGIES CO., LTD
2N80
2.4A, 800V N-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
2N80
is an N-channel mode power MOSFET using
UTC’s advanced technology to provide costumers planar stripe and
DMOS technology. This technology is specialized in allowing a
minimum on-state resistance and superior switching performance. It
also can withstand high energy pulse in the avalanche and
commutation mode.
The UTC
2N80
is universally applied in high efficiency switch
mode power supply.
FEATURES
* R
DS(on)
< 6.3Ω @ V
GS
=10V, I
D
=1.2A
* High switching speed
SYMBOL
ORDERING INFORMATION
Package
TO-220
TO-220F1
TO-220F2
TO-220F
TO-251
TO-252
TO-252D
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tube
Tape Reel
Tape Reel
Ordering Number
Lead Free
Halogen Free
2N80L-TA3-T
2N80G-TA3-T
2N80L-TF1-T
2N80G-TF1-T
2N80L-TF2-T
2N80G-TF2-T
2N80L-TF3-T
2N80G-TF3-T
2N80L-TM3-R
2N80G-TM3-R
2N80L-TN3-R
2N80G-TN3-R
2N80L-TND-R
2N80G-TND-R
Note: Pin Assignment: G: Gate D: Drain
S: Source
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Copyright © 2016 Unisonic Technologies Co., Ltd
1 of 7
QW-R502-480.F
2N80
MARKING
Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD
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2 of 7
QW-R502-480.F
2N80
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
800
V
Gate-Source Voltage
V
GSS
±30
V
Avalanche Current (Note 2)
I
AR
2.4
A
Continuous
I
D
2.4
A
Drain Current
9.6
A
Pulsed (Note 2)
I
DM
Single Pulsed (Note 3)
E
AS
180
mJ
Avalanche Energy
8.5
mJ
Repetitive (Note 2)
E
AR
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.0
V/ns
TO-220
85
TO-220F/TO-220F1
24
Power Dissipation
P
D
W
TO-220F2
TO-251/TO-252
43
TO-252D
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 59mH, I
AS
= 2.4A, V
DD
= 50V, R
G
= 25
Ω,
Starting T
J
= 25°C
4. I
SD
≤
2.4A, di/dt
≤
200A/µs, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
SYMBOL
θ
JA
110
1.47
θ
JC
5.2
2.85
°C/W
RATINGS
62.5
°C/W
UNIT
PARAMETER
TO-220/ TO-220F
TO-220F1/TO-220F2
Junction to Ambient
TO-251/TO-252
TO-252D
TO-220
TO-220F/TO-220F1
Junction to Case
TO-220F2
TO-251/TO-252
TO-252D
UNISONIC TECHNOLOGIES CO., LTD
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3 of 7
QW-R502-480.F
2N80
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
SYMBOL
BV
DSS
△
BV
DSS
/
△
T
J
Power MOSFET
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain-Source Leakage Current
Gate- Source Leakage Current
Forward
Reverse
TEST CONDITIONS
I
D
=250µA, V
GS
=0V
Reference to 25°C,
I
D
=250µA
V
DS
=800V, V
GS
=0V
V
DS
=640V, T
C
=125°C
V
GS
=+30V, V
DS
=0V
V
GS
=-30V, V
DS
=0V
MIN
800
TYP MAX UNIT
V
0.9
10
100
+100
-100
V/°C
µA
nA
nA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
A
V
ns
µC
I
DSS
I
GSS
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=1.2A
Forward Transconductance (Note 1)
g
FS
V
DS
=50V, I
D
=1.2A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
GS
=0V, V
DS
=25V,
Output Capacitance
C
OSS
f=1.0MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Turn-ON Delay Time
t
D(ON)
V
GS
=10V V
DD
=30V,
Rise Time
t
R
I
D
=0.5A, R
G
=25Ω
Turn-OFF Delay Time
t
D(OFF)
(Note 1,2)
Fall-Time
t
F
Total Gate Charge
Q
G
V
GS
=10V, V
DS
=50V,
I
D
=1.3A, I
G
=100µA
Gate to Source Charge
Q
GS
(Note 1,2)
Gate to Drain Charge
Q
GD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Drain-Source Diode Forward Voltage
V
SD
I
S
=2.4A, V
GS
=0V
Reverse Recovery Time (Note 1)
t
RR
I
S
=2.4A, V
GS
=0V,
dI
F
/dt=100A/µs
Reverse Recovery Charge (Note 1)
Q
RR
Notes: 1. Pulse Test: Pulse width
≤
300µs, Duty cycle
≤
2%
2. Essentially independent of operating temperature
3.0
4.8
2.65
550
45
7
50
60
80
40
18
6
5
5.0
6.3
650
60
9
28
2.4
9.6
1.4
480
2.0
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-480.F
2N80
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
DUT
R
G
+
V
DS
L
-
I
SD
V
GS
V
DD
Driver
Same Type
as DUT
dv/dt controlled by R
G
I
SD
controlled by pulse period
Peak Diode Recovery dv/dt Test Circuit & Waveforms
V
GS
(Driver
)
D=
Gate Pulse Width
Gate Pulse Period
10V
I
FM
, Body Diode Forward Current
I
SD
(DUT)
I
RM
Body Diode Reverse Current
V
DS
(DUT)
di/dt
Body Diode Recovery dv/dt
V
SD
V
DD
Body Diode Forward
Voltage Drop
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-480.F
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