UNISONIC TECHNOLOGIES CO., LTD
MMBT2222A
NPN GENERAL PURPOSE
AMPLIFIER
FEATURES
NPN SILICON TRANSISTOR
3
3
1
2
SOT-23
* This device is for use as a medium power amplifier and switch
requiring collector currents up to 600mA.
1
2
(JEDEC TO-236)
SOT-323
3
1
1
2
SOT-523
DFN1006-3
ORDERING INFORMATION
Ordering Number
Package
Pin Assignment
1
2
3
E
B
C
E
B
C
E
B
C
B
E
C
Packing
Tape Reel
Tape Reel
Tape Reel
Tape Reel
MMBT2222AL-AE3-R
MMBT2222AG-AE3-R
SOT-23
MMBT2222AL-AL3-R
MMBT2222AG-AL3-R
SOT-323
MMBT2222AL-AN3-R
MMBT2222AG-AN3-R
SOT-523
MMBT2222AL-K03-1006-R MMBT2222AG-K03-1006-R
DFN1006-3
Note: Pin Assignment: E: Emitter
B: Base
C: Collector
MARKING
SOT-23 / SOD-323 / SOD-523
DFN1006-3
www.unisonic.com.tw
Copyright © 2017 Unisonic Technologies Co., Ltd
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QW-R206-019. N
MMBT2222A
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C, unless otherwise specified.)
RATINGS
UNIT
75
V
40
V
6
V
600
mA
SOT-23
350
SOT-323
200
Collector Dissipation
P
C
mW
SOT-523
150
DFN1006-3
300 (Note 1)
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: Absolute maximum ratings are the values beyond which the device will be damaged permanently.
Absolute maximum ratings are only stress ratings and it is not implied for functional device operation.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
357
625
833
416 (Note)
UNIT
C/W
SOT-23
SOT-323
Junction to Ambient
θ
JA
SOT-523
DFN1006-3
Note: Transistor mounted on an FR4 printed circuit board.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-019. N
MMBT2222A
PARAMETER
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Base Cutoff Current
Collector Cutoff Current
ON CHARACTERISTICS
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
I
BL
I
CEX
NPN SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS
(Ta=25°C, unless otherwise specified.)
TEST CONDITIONS
I
C
=10μA, I
E
=0
I
C
=10mA, I
B
=0
I
E
=10μA, I
C
=0
V
CB
=60V, I
E
=0
V
CB
=60V, I
E
=0, Ta=150C
V
EB
=3.0V, I
C
=0
V
CE
=60V, V
EB(OFF)
=3.0V
V
CE
=60V, V
EB(OFF)
=3.0V
I
C
=0.1mA, V
CE
=10V
I
C
=1.0mA, V
CE
=10V
I
C
=10mA, V
CE
=10V
I
C
=10mA, V
CE
=10V, Ta= -55C
I
C
=150mA, V
CE
=10V(Note)
I
C
=150mA, V
CE
=1.0V(Note)
I
C
=500mA, V
CE
=10V(Note)
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
I
C
=20mA, V
CB
=20V, f=300MHz
I
C
=20mA, V
CE
=20V, f=100MHz
V
CB
=10V, I
E
=0, f=100kHz
V
EB
=0.5V, I
C
=0, f=100kHz
I
C
=20mA, V
CB
=20V, f=31.8MHz
I
C
=100μA, V
CE
=10V, Rs=1.0kΩ
f=1.0kHz
300
8.0
25
150
4.0
10
25
225
60
MIN
75
40
6
0.01
10
10
20
10
35
50
75
35
100
50
40
TYP
MAX
UNIT
V
V
V
µA
µA
nA
nA
nA
DC Current Gain
h
FE
300
Collector-Emitter Saturation
Voltage(Note)
V
CE(SAT)
Base-Emitter Saturation
V
BE(SAT)
Voltage(Note)
SMALL SIGNAL CHARACTERISTICS
Real Part of Common-Emitter High
Re(hje)
Frequency Input Impedance
Transition Frequency
f
T
Output Capacitance
Cobo
Input Capacitance
Cibo
Collector Base Time Constant
rb'Cc
Noise Figure
NF
0.6
0.3
1.0
1.2
2.0
60
V
V
V
V
Ω
MHz
pF
pF
pS
dB
ns
ns
ns
ns
SWITCHING CHARACTERISTICS
Delay Time
t
D
V
CC
=30V, V
BE(OFF)
=0.5V,
Rise Time
t
R
I
C
=150mA, I
B1
=15mA
Storage Time
t
S
Vcc=30V, I
C
=150mA
Fall Time
t
F
I
B1
= I
B2
=15mA
Note: Pulse test: Pulse Width
300μs, Duty Cycle
2.0%
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-019. N
MMBT2222A
TEST CIRCUITS
NPN SILICON TRANSISTOR
30V
200Ω
16V
0
≤200ns
1.0kΩ
500Ω
Fig 1. Saturated Turn-On Switching Time
Fig 2. Saturated Turn-Off Switching Time
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-019. N
MMBT2222A
TYPICAL CHARACTERISTICS
DC Current Gain
vs. Collector Current
NPN SILICON TRANSISTOR
Collector-Emitter Saturation Voltage vs.
Collector Current
Collector-Emitter Voltage, V
CE(SAT)
(V)
0.4
β=10
0.3
125
°C
25
°C
0.1
-40
°C
1
10
100
500
500
DC Current Gain
, h
FE
V
CE
=5V
400
300
125
°C
200
100
-40
°C
0
0.1 0.3
1
10
30
100
300
25
°C
0.2
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
Collector Current, I
CBO
(nA)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Capacitance (pF)
Base-Emitter on Voltage, V
BE(ON)
(V)
Base-Emitter Voltage, V
BE(SAT)
(V)
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QW-R206-019. N
51单片机
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