UNISONIC TECHNOLOGIES CO., LTD
7N65K-MTQ
7A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
7N65K-MTQ
is a high voltage power MOSFET
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and high rugged
avalanche characteristics. This power MOSFET is usually used in
high speed switching applications of switching power supplies and
adaptors.
FEATURES
* R
DS(ON)
< 1.6
Ω
@ V
GS
= 10 V, I
D
= 3.5 A
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
SYMBOL
ORDERING INFORMATION
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tube
Tube
Tape Reel
Ordering Number
Package
Lead Free
Halogen Free
7N65KL-TA3-T
7N65KG-TA3-T
TO-220
7N65KL-TF3-T
7N65KG-TF3-T
TO-220F
7N65KL-TF1-T
7N65KG-TF1-T
TO-220F1
7N65KL-TF2-T
7N65KG-TF2-T
TO-220F2
7N65KL-TF3T-T
7N65KG-TF3T-T
TO-220F3
7N65KL-TM3-T
7N65KG-TM3-T
TO-251
7N65KL-TN3-R
7N65KG-TN3-R
TO-252
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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QW-R205-020.E
7N65K-MTQ
MARKING
Power MOSFET
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QW-R205-020.E
7N65K-MTQ
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
650
V
Gate-Source Voltage
V
GSS
±30
V
Avalanche Current (Note 2)
I
AR
7
A
Continuous Drain Current
I
D
7
A
Pulsed Drain Current (Note 2)
I
DM
24
A
Avalanche Energy
Single Pulsed (Note 3)
E
AS
350
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
ns
TO-220
125
W
TO-220F/TO-220F1
40
W
TO-220F3
Power Dissipation
P
D
TO-220F2
42
W
TO-251/TO-252
55
W
Junction Temperature
T
J
+150
°C
Operating Temperature
T
OPR
-55 ~ +150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by T
J
3. L = 14.28mH, I
AS
= 7A, V
DD
= 90V, R
G
= 25
Ω,
Starting T
J
= 25°C
4. I
SD
≤
7A, di/dt
≤200A/μs,
V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
SYMBOL
θ
JA
RATING
62.5
110
1.0
θ
JC
3.2
2.97
2.27
°C/W
UNIT
°C/W
PARAMETER
TO-220/TO-220F
TO-220F1/TO-220F2
Junction to Ambient
TO-220F3
TO-251/TO-252
TO-220
TO-220F/TO-220F1
Junction to Case
TO-220F3
TO-220F2
TO-251/TO-252
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QW-R205-020.E
7N65K-MTQ
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified)
SYMBOL
BV
DSS
I
DSS
TEST CONDITIONS
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Power MOSFET
MIN TYP MAX UNIT
V
GS
= 0V, I
D
= 250μA
650
V
V
DS
= 650V, V
GS
= 0V
10
μA
Forward
V
GS
= 30V, V
DS
= 0V
100 nA
Gate- Source Leakage Current
I
GSS
-100 nA
Reverse
V
GS
= -30V, V
DS
= 0V
Breakdown Voltage Temperature Coefficient
△
BV
DSS
/△T
J
I
D
=250μA, Referenced to 25°C
0.53
V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 250μA
2.0
4.0
V
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10V, I
D
= 3.5A
1.6
Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
875 1000 pF
V
DS
=25V, V
GS
=0V,
Output Capacitance
C
OSS
88 120 pF
f=1.0 MHz
8
25
pF
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
50
60
ns
V
DD
=30V, I
D
=0.5A,
Turn-On Rise Time
t
R
65
80
ns
R
G
=25Ω (Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
110 130 ns
Turn-Off Fall Time
t
F
55
70
ns
Total Gate Charge
Q
G
22.5 40 nC
V
DS
=50V, I
D
=1.3A,
Gate-Source Charge
Q
GS
7.5
nC
V
GS
=10V (Note 1, 2)
5
nC
Gate-Drain Charge
Q
GD
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0 V, I
S
= 7 A
1.4
V
Maximum Continuous Drain-Source Diode
I
S
7
A
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
28
A
Forward Current
Body Diode Reverse Recovery Time
t
rr
320
ns
I
S
=7A, di/dt=100A/μs
Body Diode Reverse Recovery Charge
Q
RR
2.4
nC
Notes: 1. Pulse Test: Pulse width
≤
300μs, Duty cycle
≤
2%
2. Essentially independent of operating temperature
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QW-R205-020.E
7N65K-MTQ
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
V
DS
-
+
-
L
Power MOSFET
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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QW-R205-020.E
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