UNISONIC TECHNOLOGIES CO., LTD
2SD1624
HIGH CURRENT SWITCHING
APPLICATION
DESCRIPTION
NPN SILICON TRANSISTOR
The UTC
2SD1624
applies to voltage regulators, relay drivers,
lamp drivers, and electrical equipment.
FEATURES
* Adoption of FBET, MBIT processes
* Low collector-to-emitter saturation voltage
* Fast switching speed.
* Large current capacity and wide ASO
ORDERING INFORMATION
Order Number
Package
SOT-89
E: Emitter
Pin Assignment
1
2
3
B
C
E
Packing
Tape Reel
2SD1624G-x-AB3-R
Note: Pin Assignment: B: Base C: Collector
MARKING
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QW-R208-005.F
2SD1624
PARAMETER
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(T
A
=25C, unless otherwise specified)
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V
CBO
60
V
Collector-Emitter Voltage
V
CEO
50
V
Emitter-Base Voltage
V
EBO
6
V
Collector Power Dissipation( Tc=25C)
P
C
500
mW
3
A
DC
I
C
Collector Current
PULSE
I
CP
6
A
Junction Temperature
T
J
150
C
Storage Temperature
T
STG
-55 ~ +150
C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
A
=25C, unless otherwise specified)
SYMBOL
BV
CBO
BV
CEO
BV
EBO
V
CE(SAT)
V
BE(SAT)
I
CBO
I
EBO
h
FE
f
T
C
OB
t
ON
t
STG
t
F
TEST CONDITIONS
I
C
=10A, I
E
=0
I
C
=1mA, R
BE
=
I
E
=10A, I
C
=0
I
C
=2A, I
B
=100mA
I
C
=2A, I
B
=100mA
V
CB
=40V, I
E
=0
V
EB
=4V, I
C
=0
V
CE
=2V, Ic=100mA
V
CE
=10V, I
C
=50mA
V
CE
=10V, f=1MHz
See test circuit
See test circuit
See test circuit
MIN
60
50
6
TYP
MAX
UNIT
V
V
V
V
V
A
A
MHz
pF
ns
ns
ns
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Turn-ON Time
Storage Time
Fall Time
0.19
0.94
100
150
25
70
650
35
0.5
1.2
1
1
560
CLASSIFICATION OF h
FE
RANK
RANGE
R
100-200
S
140-280
T
200-400
U
280-560
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QW-R208-005.F
2SD1624
TEST CIRCUIT
PW=20µS
Duty Cycle≤1%
INPUT
I
B1
R
B
I
B2
50Ω
V
R
+
100µF
-5V
Ic=10, I
B1
= -10, I
B2
=1A
NPN SILICON TRANSISTOR
OUTPUT
25Ω
25V
+
470µF
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QW-R208-005.F
2SD1624
TYPICAL CHARACTERISTICS
NPN SILICON TRANSISTOR
Collector Current vs.
Base to Emitter Voltage
3.0
2.8
Collector Current, I
C
(A)
2.4
2.0
-25
℃
1000
7
5
DC Current Gain vs. Collector Current
V
CE
=2V
V
CE
=2V
DC Current Gain, h
FE
3
2
Ta=75
℃
Ta=7
5
1.6
1.2
0.8
0.4
0
0
25
℃
℃
25℃
-25℃
100
7
5
3
2
0.2
0.4
0.6
1.0
0.8
Base to Emitter Voltage, V
BE
(V)
1.2
7
0.01
2
3
0.1
2 3 5 7
1.0
Collector Current, I
C
(A)
5 7
2 3
5
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2SD1624
TYPICAL CHARACTERISTICS(Cont.)
NPN SILICON TRANSISTOR
10
5
3
2
ASO.
I
CP
I
C
D
10
0m
1.8
1.6
1.5
1.4
1.2
1.0
0.8
0.6
0.5
0.4
0.2
2
3
5
7
Collector Dissipation vs.
Ambient Temperature
M
ou
10
m
s
s
1.0
5
3
2
nt
(2 ed
50 on
m ce
m
2
ra
×0 m
.8 ic
m bo
m a
rd
)
C
O
pe
t
ra
io
n
0.1
5
3
2
2
Mounted on ceramic board
2
(250mm
2
×0.8mm)
Ta=25℃ one pulse
5
No heat sink
0
20 40 60 80 100 120 140 160
Ambient Temperature, Ta (℃)
1.0
10
100
Collector to Emitter Voltage, V
CE
(V)
7
2
3
5 7
0
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R208-005.F
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