UNISONIC TECHNOLOGIES CO., LTD
MMBT5551
HIGH VOLTAGE SWITCHING
TRANSISTOR
DESCRIPTION
3
NPN SILICON TRANSISTOR
The UTC
MMBT5551
is a high voltage fast-switching NPN
power transistor. It is characterized with high breakdown voltage,
high current gain and high switching speed.
2
1
FEATURES
SOT-23
(JEDEC TO-236)
* High Collector-Emitter Voltage: V
CEO
=160V
* High current gain
ORDERING INFORMATION
Ordering Number
Package
SOT-23
C: Collector
Pin Assignment
1
2
3
E
B
C
Packing
Tape Reel
Note:
MMBT5551G-x-AE3-R
Pin Assignment: E: Emitter
B: Base
MARKING
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MMBT5551
NPN SILICON TRANSISTOR
ABSOLUATE MAXIUM RATINGS
(T
A
= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector -Base Voltage
V
CBO
180
V
Collector -Emitter Voltage
V
CEO
160
V
Emitter -Base Voltage
V
EBO
6
V
DC Collector Current
I
C
600
mA
Power Dissipation
P
D
350
mW
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
SYMBOL
θ
JA
θ
JC
RATINGS
357
104
UNIT
°C/W
°C/W
PARAMETER
Junction to Ambient
Junction to Case
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C, unless otherwise specified)
MIN
180
160
6
TYP
MAX UNIT
V
V
V
50
nA
50
nA
400
0.15
0.2
1
1
300
6.0
8
V
V
V
V
MHz
pF
dB
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Base Breakdown Voltage
V
CBO
I
C
=100A, I
E
=0
Collector-Emitter Breakdown Voltage
V
CEO
I
C
=1mA, I
B
=0
Emitter-Base Breakdown Voltage
V
EBO
I
E
=10μA, I
C
=0
Collector Cut-off Current
I
CBO
V
CB
=120V, I
E
=0
Emitter Cut-off Current
I
EBO
V
BE
=4V, I
C
=0
V
CE
=5V, I
C
=1mA
DC Current Gain(note)
h
FE
V
CE
=5V, I
C
=10mA
V
CE
=5V, I
C
=50mA
I
C
=10mA, I
B
=1mA
Collector-Emitter Saturation Voltage
V
CE(SAT)
I
C
=50mA, I
B
=5mA
I
C
=10mA, I
B
=1mA
Base-Emitter Saturation Voltage
V
BE(SAT)
I
C
=50mA, I
B
=5mA
Current Gain Bandwidth Product
f
T
V
CE
=10V, I
C
=10mA, f=100MHz
Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
I
C
=0.25mA, V
CE
=5V
Noise Figure
NF
R
S
=1kΩ, f=10Hz ~ 15.7kHz
Note: Pulse test: PW<300μs, Duty Cycle<2%
80
80
80
160
100
CLASSIFICATION OF h
FE
RANK
RANGE
A
80-170
B
150-240
C
200-400
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MMBT5551
■
TYPICAL CHARACTERICS
Fig.1 Collector Output Capacitance
10
3
10
NPN SILICON TRANSISTOR
Fig.2 DC Current Gain
Capacitance, Cob (pF)
V
CE
=5V
DC current Gain, h
FE
8
f=1MHz
I
E
=0
2
10
6
4
1
10
2
0
0
10
1
10
2
10
0
10
-1
10
0
10
1
10
2
10
3
10
Collector-Base Voltage (V)
Collector Current, Ic (mA)
Fig.3 Base-Emitter on Voltage
3
10
1
10
Fig.4 Saturation Voltage
Ic=10*I
B
Collector Current, Ic (mA)
V
CE
=5V
2
10
Saturation Voltage (V)
0
10
V
BE(SAT)
1
10
-1
10
V
CE(SAT)
-2
10
0
10
0
0.2
0.4
0.6
0.8
1.0
-1
10
0
10
1
10
2
10
3
10
Base-Emitter Voltage (V)
Collector Current, Ic (mA)
Current Gain-Bandwidth Product, f
T
(MHz)
Fig.5 Current Gain-Bandwidth
Product
V
CE
=10V
2
10
SAFE OPERATING AREA
COLLECTOR CURRENT, Ic (A)
10
1
3
10
S
m
10
0.1
0S
1.
1
10
0.01
0
10
0
10
0.001
1
10
2
10
3
10
1
10
100
1000
Collector Current, Ic (mA)
Forward Voltage-VCE(V)
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QW-R206-010. I
MMBT5551
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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www.unisonic.com.tw
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QW-R206-010. I
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